Optical memory semiconductor laser apparatus

Claim 2

An optical memory semiconductor laser apparatus incorporating a recording semiconductor laser device for an optical memory and a replaying semiconductor laser device for an optical memory, therein into a single body, wherein both said replaying semiconductor laser device and said recording semiconductor laser device are of a VSIS laser device comprising a semiconductor substrate with a V-channel that is formed through a current blocking layer, the width of the V-channel of said replaying semiconductor laser device being smaller than that of the V-channel of said recording semiconductor laser device, and the oscillation threshold current of said replaying semiconductor laser device is smaller than that of said recording semiconductor laser device.

Claim 3

In an optical memory semiconductor laser apparatus, the apparatus comprising a semiconductor substrate, a current blocking layer disposed on said substrate, first and second V-channels formed in a parallel manner through said current blocking layer and in said substrate, a first cladding layer disposed on said current blocking layer and filing said V-channels, an active layer formed above said first cladding layer, wherein said first and second V-channels function as first and second optical waveguides within said active layer, respectively, wherein said first and second optical waveguides respectively constitute recording and replaying semiconductor laser devices, the width of said second V-channel being smaller than that of said first V-channel, and the oscillation threshold current of said replaying semiconductor laser device is smaller than that of said recording semiconductor laser device.

Claim 4

In an optical memory semiconductor laser apparatus, the apparatus comprising a semiconductor substrate, a current blocking layer disposed on said substrate, first and second V-channels formed in a parallel manner through said current blocking layer and in said substrate, a first cladding layer disposed on said current blocking layer and filing said V-channels, an active layer formed above said first cladding layer, wherein said first and second V-channels function as first and second optical waveguides within said active layer, respectively, wherein said first and second optical waveguides respectively constitute recording and replaying semiconductor laser devices, the width of said second V-channel being smaller than that of said first V-channel, and the oscillation threshold current of said replaying semiconductor laser device is smaller than that of said recording semiconductor laser device.

Claim 5

An optical memory semiconductor laser apparatus according to claim 2, wherein the width of said first V-channel is about 5 μm and the width of said second V-channel is about 3 μm.

Claim 6

An optical memory semiconductor laser apparatus according to claim 2 wherein the threshold current of said replaying semiconductor laser device is about 35 mA and the threshold current of said recording semiconductor laser device is about 60 mA.

Claim 7

An optical memory semiconductor laser apparatus according to claim 2 wherein said substrate, said current blocking layer and said active layer are composed of GaAs and said cladding layer is composed of AlGaAs.