EP0086008A2
Expired / Lapsed
EP
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Semiconductor device for generating at least two radiation beams
Assignee: Koninklijke Philips NV
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Filing: 1983-01-26
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Granted: —
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Expires: 2003-01-26
Abstract
Abstract A semiconductor device for generating at least two radiation beams (1, 2) of preferably different frequency comprises a substrate (3) on which according to the invention at least one LED or laser is provided on each side by epitaxial growth. The radiation beams are preferably parallel to each other and are preferably generated by double hetero junction (DH) lasers. Application in DRAW (Direct Read And Write) and in DOR (Direct Optical Recording) systems.
Inventors
- 👤 Rudolf Paulus Tijburg
- 👤 Teunis Van Dongen
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 20:26
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043; H01S5/02; H01S5/0201; H01S5/0202; H01S5/0206; H01S5/0217; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2063; H01S5/22; H01S5/2205; H01S5/4087
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
109 words
A semiconductor device for generating at least two radiation beams comprising a semiconductor substrate having substantially parallel first and second surfaces and a layer structure which is grown epitaxially on this substrate and comprises at least a first and a second pn-junction which, at sufficiently high currents in the forward direction, each generate in the adjoining semiconductor material, one of said radiation beams having a direction parallel to the main surfaces, characterized in that a first layer structure comprising the first pn-junction is grown on the first main surface and a second layer structure comprising the second pn-junction is grown on the opposite second main surface of the substrate.
Claim 2
Dependent Claim
109 words
A semiconductor device for generating at least two radiation beams comprising a semiconductor substrate having substantially parallel first and second surfaces and a layer structure which is grown epitaxially on this substrate and comprises at least a first and a second pn-junction which, at sufficiently high currents in the forward direction, each generate in the adjoining semiconductor material, one of said radiation beams having a direction parallel to the main surfaces, characterized in that a first layer structure comprising the first pn-junction is grown on the first main surface and a second layer structure comprising the second pn-junction is grown on the opposite second main surface of the substrate.
Claim 3
Dependent Claim
21 words
A semiconductor device as claimed in Claim 1, characterized in that the said radiation beams are substantially parallel to each other.
Claim 4
Dependent Claim
22 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that the said radiation beams have a different radiation frequency.
Claim 5
Dependent Claim
29 words
A semiconductor device as claimed in any of the preceding Claims, characterized in that the device comprises substantially parallel strip-shaped active semiconductor regions which emit the said radiation beams.
Claim 6
Dependent Claim
29 words
A semiconductor device as claimed in Claim 4, characterized in that, in projection at right angles to the said main surfaces, the active regions do not overlap each other.
Claim 7
Dependent Claim
30 words
A semiconductor device as claimed in any of the preceding Claims, characterized in that each of the pn-junctions is located inside a resonator and forms part of a semiconductor laser.
Claim 8
Dependent Claim
33 words
A semiconductor device as claimed in Claim 6, characterized in that the resonator is constituted by two substantially parallel reflecting side surfaces which are substantially at right angles to the said main surfaces.
Claim 9
Dependent Claim
62 words
A semiconductor device as claimed in Claim 6 or 7, characterized in that each semiconductor laser comprises an active layer which is provided between two passive layers of opposite conductivity type having a larger energy gap than the active layer, the passive layers of the two lasers located on the side of the substrate having the same conductivity type as the substrate.
References Cited (Backward Citations)
No citation records indexed.
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