Semiconductor laser device

Claim 2

In a semiconductor laser device, a double-heterostructure multi-layered crystal containing an active layer for laser oscillation and including a striped etching-protective thin layer formed on said double-heterostructure multi-layered crystal, a stripped-mesa mesa multi-layered crystal formed on said striped etching-protective thin layer and includes a cladding layer, and a burying layer formed on said double-heterostructure multi-layered crystal outside outside of both the striped thin layer and the striped-mesa multi-layered crystal, wherein said cladding layer and said burying layer contain aluminum and wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of said cladding layer is at least approximately 1,6, thereby providing refractive index distributions within said active layer corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa mult-layered crystal.

Claim 3

A double-heterostructure multi-layered crystal for use in a semiconductor laser device, comprising: a substrate; a buffer layer formed on said substrate; a first cladding layer formed on said buffer layer; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; an etching-protective layer formed on said second cladding layer; a cap layer formed on said etching protective layer; a cap layer formed on said third cladding layer; wherein said substrate, buffer layer, first cladding layer, active layer, and second cladding layer are of substantially equal widths comprising a first width, and said etching-protective layer, third cladding layer, and cap layer are of substantially equal widths comprising a second width which is less than said first width; and further comprising a burying layer formed on said second cladding layer; a first electrode formed on said cap layer and said burying layer; and a second electrode formed on said substrate; wherein said burying layer, first electrode and second electrode have widths substantially equal to said first width and wherein each of said burying layer and said third cladding layer contains aluminum, wherein a ratio of the aluminum mole of said burying layer to the aluminum mole ratio of said third cladding layer is at least approximately 1.6.

Claim 4

A double-heterostructure multi-layered crystal for use in a semiconductor laser device, comprising: a substrate; a buffer layer formed on said substrate; a first cladding layer formed on said buffer layer; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; an etching-protective layer formed on said second cladding layer; a cap layer formed on said etching protective layer; a cap layer formed on said third cladding layer; wherein said substrate, buffer layer, first cladding layer, active layer, and second cladding layer are of substantially equal widths comprising a first width, and said etching-protective layer, third cladding layer, and cap layer are of substantially equal widths comprising a second width which is less than said first width; and further comprising a burying layer formed on said second cladding layer; a first electrode formed on said cap layer and said burying layer; and a second electrode formed on said substrate; wherein said burying layer, first electrode and second electrode have widths substantially equal to said first width and wherein each of said burying layer and said third cladding layer contains aluminum, wherein a ratio of the aluminum mole of said burying layer to the aluminum mole ratio of said third cladding layer is at least approximately 1.6.

Claim 5

A double-heterostructure multi-layered crystal for use in a semiconductor laser device, comprising: a substrate; a buffer layer formed on said substrate; a first cladding layer formed on said buffer layer; a first graded index layer formed on said first cladding layer; an active layer formed on said first graded index layer; a second graded index layer formed on said active layer; an etching-protective layer formed on said second graded index layer; a second cladding layer formed on said etching-protective layer; a cap layer formed on said second cladding layer; wherein said substrate, buffer layer, first cladding layer, first graded index layer, active layer, and second graded index layer are of substantially equal widths comprising a first width, and said etching-protective layer, second cladding layer, and cap layer are of substantially equal widths comprising a second width which is less than said first width; and further comprising a burying layer formed on said second graded index layer; a first electrode formed on said cap layer and said burying layer; and a second electrode formed on said substrate; wherein said burying layer, first electrode and second electrode have widths substantially equal to said first width, and wherein each of said burying layer and said third cladding layer contains aluminum, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of said second cladding layer is at least approximately 1.6.

Claim 6

A double-heterostructure multi-layered crystal for use in a semiconductor laser device, comprising: a substrate; a buffer layer formed on said substrate; a first cladding layer formed on said buffer layer; a first graded index layer formed on said first cladding layer; an active layer formed on said first graded index layer; a second graded index layer formed on said active layer; an etching-protective layer formed on said second graded index layer; a second cladding layer formed on said etching-protective layer; a cap layer formed on said second cladding layer; wherein said substrate, buffer layer, first cladding layer, first graded index layer, active layer, and second graded index layer are of substantially equal widths comprising a first width, and said etching-protective layer, second cladding layer, and cap layer are of substantially equal widths comprising a second width which is less than said first width; and further comprising a burying layer formed on said second graded index layer; a first electrode formed on said cap layer and said burying layer; and a second electrode formed on said substrate; wherein said burying layer, first electrode and second electrode have widths substantially equal to said first width, and wherein each of said burying layer and said third cladding layer contains aluminum, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of said second cladding layer is at least approximately 1.6.

Claim 7

In a GaAs semiconductor laser device, a double-heterostructure multi-layered crystal containing an active layer for laser oscillation and including a striped etching-protective thin layer formeed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal including a cladding layer containing aluminum, a striped etching-protective thin layer, and a burying layer containing aluminum and formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of said cladding layer is at least approximately 1.6, said striped etching-protective thin layer containing no aluminum, thereby providing refractive index distributions within said active layer corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.

Claim 8

In a GaAs semiconductor laser device, a double-heterostructure multi-layered crystal containing an active layer for laser oscillation and including a striped etching-protective thin layer formeed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal including a cladding layer containing aluminum, a striped etching-protective thin layer, and a burying layer containing aluminum and formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of said cladding layer is at least approximately 1.6, said striped etching-protective thin layer containing no aluminum, thereby providing refractive index distributions within said active layer corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.

Claim 9

In a semiconductor laser device, a double-heterostructure multi-layered crystal containing an active layer for laser oscillation and including a striped etching-protective thin layer formed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal formed on said striped etching-protective thin layer and including a cladding layer containing aluminum, and a burying layer containing aluminum and formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, wherein each of said burying layer and said cladding layer contains aluminum, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of the cladding layer is at least approximately 1.6, said striped etching-protective thin layer being approximately 200 A or less in thickness, thereby providing refractive index distributions within said active layer correponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.

Claim 10

In a semiconductor laser device, a double-heterostructure multi-layered crystal containing an active layer for laser oscillation and including a striped etching-protective thin layer formed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal formed on said striped etching-protective thin layer and including a cladding layer containing aluminum, and a burying layer containing aluminum and formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, wherein each of said burying layer and said cladding layer contains aluminum, wherein a ratio of the aluminum mole ratio of said burying layer to the aluminum mole ratio of the cladding layer is at least approximately 1.6, said striped etching-protective thin layer being approximately 200 A or less in thickness, thereby providing refractive index distributions within said active layer correponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.