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US4897172A
Expired / Lapsed
US
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Sputtering chamber structure for high-frequency bias sputtering process
Assignee: Toshiba Corp
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Filing: 1988-08-24
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Granted: 1990-01-30
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Expires: 2008-08-24
Abstract
Abstract A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes, a metal protection plate formed to surround said target and having a first opening facing the front surface of the target, and a vacuum chamber for receiving the electrodes and the protection plate in a reduced-pressure condition during the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate further has a second opening which is formed separately from the first opening to decentralize target power in the inner space defined by the protection plate when the high-frequency bias sputtering process is effected such that the first opening is closed by the substrate electrode.
Inventors
- 👤 Toshihiko Katsura
- 👤 Masahiro Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:25
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; C23C14/56; C23C14/564; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
144 words
A sputtering chamber structure adapted to perform a high-frequency bias sputtering process for forming an insulation film on a semiconductor substrate by depositing thereon particles emitted from a target formed of insulative material, comprising: first and second facing electrodes to which the target and semiconductor substrate are adapted to be attached, respectively; a protection plate formed to surround said target and having a first opening facing the front surface of said target and at least one second opening formed separately from said first opening to decentralize target power in the inner space defined by said protection plate when said high-frequency bias sputtering process is effected, said first opening being closed off by said second electrode; and a vacuum chamber for receiving said first and second electrodes and said protection plate and adapted to be in a reduced-pressure condition during said high-frequency bias sputtering process.
Claim 2
Dependent Claim
144 words
A sputtering chamber structure adapted to perform a high-frequency bias sputtering process for forming an insulation film on a semiconductor substrate by depositing thereon particles emitted from a target formed of insulative material, comprising: first and second facing electrodes to which the target and semiconductor substrate are adapted to be attached, respectively; a protection plate formed to surround said target and having a first opening facing the front surface of said target and at least one second opening formed separately from said first opening to decentralize target power in the inner space defined by said protection plate when said high-frequency bias sputtering process is effected, said first opening being closed off by said second electrode; and a vacuum chamber for receiving said first and second electrodes and said protection plate and adapted to be in a reduced-pressure condition during said high-frequency bias sputtering process.
Claim 3
Dependent Claim
30 words
A sputtering chamber structure according to claim 1, wherein said second electrode has stepped peripheral portions which overlap the edge portions of said protection plate which define said first opening.
Claim 4
Dependent Claim
34 words
A sputtering chamber structure according to claim 2, wherein said at least one second opening includes a curved gap for discharging plasma from said inner space and blocking the particles emitted from said target.
Claim 5
Dependent Claim
23 words
A sputtering chamber structure according to claim 2, wherein said at least one second opening is formed at a position below said target.
Claim 6
Dependent Claim
20 words
A sputtering chamber structure according to claim 1, wherein said at least one second opening comprises a plurality of openings.
Claim 7
Dependent Claim
20 words
A sputtering chamber structure according to claim 1, wherein said at least one second opening comprises a plurality of openings.
Claim 8
Dependent Claim
34 words
A sputtering chamber structure according to claim 1, wherein said at least one second opening includes a curved gap for discharging plasma from said inner space and blocking the particles emitted from said target.
Claim 9
Dependent Claim
23 words
A sputtering chamber structure according to claim 1, wherein said at least one second opening is formed at a position below said target.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-29 | 1993-07-31 | 1994-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-29 | 1997-07-31 | 1998-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-29 | 2001-07-31 | 2002-01-30 | $7700.00 | Window Closed / Lapsed |