US4896301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device capable of multidirection data selection and having address scramble means
Assignee: Fujitsu Ltd
•
Filing: 1988-01-13
•
Granted: 1990-01-23
•
Expires: 2008-01-13
Abstract
Abstract An improved semiconductor memory device provided with an address scramble unit in addition to a multidirection data selection unit. The address scramble unit converts an external address having an addressing linearity regardless of a complex multidirection data selection into an internal address used by the multidirection data selection unit. A plurality of memory cells are connected between a plurality of word lines and a plurality of bit lines to form a logical space; a plurality of boundaries being defined in a direction thereof. Each boundary includes a plurality of segments each defining a plurality of simultaneously accessible bit data. The multidirection data selection unit outputs a data in response to a segment designation address a direction signal and a segment internal address, from a boundary data selected by a row address.
Inventors
- 👤 Junji Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:31
CPC Classifications
G; G11; G11C; G11C7/00; G11C8/00; G06; G06F; G06F12/00; G06F12/02; G06F12/0207
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
173 words
A semiconductor memory device, comprising: a plurality of word lines; a plurality of bit lines; a memory cell array means having a plurality of memory cells operatively connected to said word lines and said bit lines for forming a logical space; a row decoder means operatively connected to said word lines for selecting one word line in response to an internal row address; multidirection data selection means operatively connected to said bit lines for simultaneously receiving a data set including a plurality of data from said memory cells, and for selecting desired data from said received data set in response to an internal directional address; and address scramble means, operatively connected to said row decoder and said multidirection selection signal from outside of said semiconductor memory device, wherein said external address having an addressing linearity regardless of a selection made at said multidirection data selection means, and wherein said address scramble means is for further converting, due to activation by said direction selection signal, said received external address to said internal directional address.
Claim 2
Dependent Claim
173 words
A semiconductor memory device, comprising: a plurality of word lines; a plurality of bit lines; a memory cell array means having a plurality of memory cells operatively connected to said word lines and said bit lines for forming a logical space; a row decoder means operatively connected to said word lines for selecting one word line in response to an internal row address; multidirection data selection means operatively connected to said bit lines for simultaneously receiving a data set including a plurality of data from said memory cells, and for selecting desired data from said received data set in response to an internal directional address; and address scramble means, operatively connected to said row decoder and said multidirection selection signal from outside of said semiconductor memory device, wherein said external address having an addressing linearity regardless of a selection made at said multidirection data selection means, and wherein said address scramble means is for further converting, due to activation by said direction selection signal, said received external address to said internal directional address.
Claim 3
Dependent Claim
99 words
A semiconductor memory device according to claim 1, wherein said address conversion in said address scramble means is generally defined by the following formula: A=f(B, V) where, A is said internal address, A=(a l , a l-1 , a 1 , a 0 ) B is said external address B=(b m , b m-1 , . . . , b 1 , b 0 ) V is said direction selection signal V=(v n , v n-1 , . . . , v 1 , v 0 ) and f is a Boolean operation function having m x n parameters.
Claim 4
Dependent Claim
29 words
A semiconductor memory device according to claim 2, wherein said external address comprises two dimensional address parameters regardless of a selection made at said the multidirection data selection means.
Claim 5
Dependent Claim
63 words
A semiconductor memory device according to claim 3, wherein said logical space comprises at least one bit map logical plane adaptive for a raster scanning of a display, said external address is defined in response to said raster scanning, and said address scramble means converts said external address to said internal directional address adaptive for said raster scanning in any multidirection data selection.
Claim 6
Dependent Claim
84 words
A semiconductor memory device according to claim 1; wherein, a plurality of boundaries are defined in at least one direction of said logical space, each boundary defining a plurality of segments, each of which segments comprises a plurality of simultaneously selectable bit data, said memory cells are connected to said word lines to select a boundary data when a desired word line and bit line is energized, and said sense amplifiers are operatively connected to said bit lines to simultaneously receive said boundary data.
Claim 7
Dependent Claim
116 words
A semiconductor memory device according to claim 5, wherein said internal directional address comprises said internal row address, a segment designation address, an internal direction address and a segment internal address, and said multidirection data selection means comprises a first predecoder operatively connected to said bit lines to receive said boundary data and to select a data segment of said boundary data in response to the segment designation address, a multidirection selection circuit operatively connected to said sense amplifiers to receive said selected data segment, a second predecoder operatively connected to said multidirection selected circuit to output a data from said multidirection selection circuit in response to the internal direction signal and the segment internal address.
Claim 8
Dependent Claim
28 words
A semiconductor memory device according to claim 6, wherein said external address comprises two dimensional address parameters regardless of a selection made at said multidirection data selection means.
Claim 9
Dependent Claim
63 words
A semiconductor memory device according to claim 7, wherein said logical space comprises at least one bit map logical plane adaptive for a raster scanning of a display, said external address is defined in response to said raster scanning, and said address scramble means converts said external address to said internal directional address adaptive for said raster scanning in any multidirection data selection.
Claim 10
Dependent Claim
59 words
A semiconductor memory device according to claim 1, further comprising a plurality of sense amplifiers operatively connected between said bit lines and said multidirection data selection means to simultaneously receive said data set from said memory cells through said bit lines, to sense said received data set and to output sensed data set to said multidirection data selection means.
References Cited (Backward Citations)
US4675849A
Cited
US4594587A
Cited
US4651308A
Cited
US4688197A
Cited
US4782488A
Cited
US4811297A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-22 | 1993-07-24 | 1994-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-22 | 1997-07-24 | 1998-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-22 | 2001-07-24 | 2002-01-23 | $7700.00 | Window Closed / Lapsed |