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US4811297A Expired / Lapsed US ⏱️ 0.0 years remaining

Boundary-free semiconductor memory device

Assignee: Fujitsu Ltd
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Filing: 1987-12-14
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Granted: 1989-03-07
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Expires: 2007-12-14
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Abstract

Abstract An entire chip is divided into N blocks (N=n×m) in accordance with a desired rectangular group of bits (n×m bits). The same row decoder is provided for every m blocks, and a row address A R or a row address A R+1 adjacent thereto is given to the row decoders. Similarly, the same column decoder is provided for every m blocks, and a column address A C or a column address A C +1 adjacent thereto is given to the column decoders. N bits of memory cells are accessed from the blocks, and the accessed memory cells are rearranged, thereby obtaining a desired rectangular group of bits.

Inventors

  • 👤 Junji Ogawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 22:33
CPC Classifications
G; G11; G11C; G11C7/00; G11C8/00; G11C8/12; G06; G06F; G06F12/00; G06F12/02; G06F12/0207

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 149 words
A semiconductor memory device comprising: n rows×m columns of memory cell blocks; row selecting means provided for each row of said memory cell blocks respectively; m column selecting means provided for each column of said memory cell blocks respectively; a first switching means, connected to said row selecting means, for supplying a row address or a row address adjacent to said row address to each of said row selecting means; a second switching means, connected to said column selecting means, for supplying a column address or a column address adjacent to said column address to each of said column selecting means; and arranging means, connected to said memory cell blocks, for rearranging n rows×m columns of cells of said memory cell blocks selected by said row selecting means and said column selecting means, thereby accessing a voluntary group of n rows×m columns of bits in a random access mode.
Claim 2
Dependent Claim 149 words
A semiconductor memory device comprising: n rows×m columns of memory cell blocks; row selecting means provided for each row of said memory cell blocks respectively; m column selecting means provided for each column of said memory cell blocks respectively; a first switching means, connected to said row selecting means, for supplying a row address or a row address adjacent to said row address to each of said row selecting means; a second switching means, connected to said column selecting means, for supplying a column address or a column address adjacent to said column address to each of said column selecting means; and arranging means, connected to said memory cell blocks, for rearranging n rows×m columns of cells of said memory cell blocks selected by said row selecting means and said column selecting means, thereby accessing a voluntary group of n rows×m columns of bits in a random access mode.
Claim 3
Dependent Claim 36 words
A device as set forth in claim 1, wherein said first and second switching means comprises means for accessing a pointing bit at a special point in said voluntary group of n rows×m columns of bits.
Claim 4
Dependent Claim 21 words
A device as set forth in claim 2, wherein said pointing bit accessing means comprises means for changing said special point.
Claim 5
Dependent Claim 36 words
A device as set forth in claim 3, wherein a part of outputs of said arranging means are in a high impedance state, thereby accessing a voluntary group of n' rows×m' column of bits (n'≦n, m'≦m).
Claim 6
Dependent Claim 92 words
A device as set forth in claim 3, further comprising: n rows×m columns of serial transfer means, each provided in parallel with the row direction of one of said memory cell blocks; a batch transfer means, connected to said serial transfer means and to said memory cell blocks, for carrying out a batch transfer therebetween; and another arranging means, connected to said serial transfer means, for rearranging n rows of said serial transfer for n serial input/output terminal, thereby accessing a voluntary group of n-rows of bits in a serial access mode.
Claim 7
Dependent Claim 34 words
A device as set forth in claim 5, wherein a part of outputs of said another arranging means are in a high impedance state, thereby accessing a voluntary group of n'-rows (n'≦n) of bits.
Claim 8
Dependent Claim 39 words
A device as set forth in claim 5, wherein each of said serial transfer means comprises a shift register said device further comprising n multiplexers, each connected between one row of said shift register and said another arranging means.
Claim 9
Dependent Claim 130 words
A semiconductor memory device comprising: n-rows of memory cell blocks; serial transfer means each provided in parallel with the row direction of one of said memory cell blocks; row selecting means provided commonly for each row of said memory cell blocks respectively; a switching means, connected to said row selecting means, for supplying a row address or a row address adjacent to said row address to each of said row selecting means; a batch transfer means, connected to said serial transfer means and to said memory cell blocks, for carrying out a batch transfer therebetween; an arranging means, connected to said serial transfer means, for rearranging n rows of said serial transfer for n serial input/output terminals, thereby accessing a voluntary group of n-rows bits in a serial access mode.
Claim 10
Dependent Claim 130 words
A semiconductor memory device comprising: n-rows of memory cell blocks; serial transfer means each provided in parallel with the row direction of one of said memory cell blocks; row selecting means provided commonly for each row of said memory cell blocks respectively; a switching means, connected to said row selecting means, for supplying a row address or a row address adjacent to said row address to each of said row selecting means; a batch transfer means, connected to said serial transfer means and to said memory cell blocks, for carrying out a batch transfer therebetween; an arranging means, connected to said serial transfer means, for rearranging n rows of said serial transfer for n serial input/output terminals, thereby accessing a voluntary group of n-rows bits in a serial access mode.
Claim 11
Dependent Claim 39 words
A device as set forth in claim 8, wherein a part of outputs (SIO 0 to SIO n-1 ) of said arranging means are in a high impedance state, thereby accessing a voluntary group Of n'-rows (n'≦n) of bits.
Claim 12
Dependent Claim 37 words
A device as set forth in claim 8, wherein each of said serial transfer means comprises a shift register said device further comprising multiplexers, each connected between one row of said shift register and said arranging means.

References Cited (Backward Citations)

US4044339A Cited
US4498155A Cited
US4596001A Cited
JPS59110086A Cited
JPS59180324A Cited
US4618947A Cited
US4618947B1 Cited
JPH06158058A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-03-06 1992-09-05 1993-03-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-03-06 1996-09-05 1997-03-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-03-06 2000-09-05 2001-03-07 $7700.00 Window Closed / Lapsed

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