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Patent US4895737A successfully refreshed from Google Patents.
US4895737A
Expired / Lapsed
US
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Metal-organic chemical vapor deposition
Assignee: GEC-MARONI Ltd
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Filing: 1986-06-12
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Granted: 1990-01-23
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Expires: 2006-06-12
Abstract
Abstract An MOCVD deposition technique wherein the pressure of reagent vapors within the reaction vessel (1) is maintained at a reduced pressure in the range 10 -2 to ˜10 millibars and contained mounted substrates (15) are heated non-inductively e.g. by an electric resistance circumferential furnace (5). In the above pressure range, high diffusivity of the reagent vapors ensures exposure of the substrates (15) to a uniform reagent mixture. A large number of substrates (15) may be processed simultaneously. As heating is non-inductive, an inert mounting (17) can be utilized avoiding the introduction of contaminants (e.g. carbon) into the deposited film.
Inventors
- 👤 Richard J. M. Griffiths
- 👤 Rodney R. Bradley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/306; C23C16/301
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
133 words
A method of metal-organic chemical vapour deposition of compound semiconductor film, this method comprising: supporting a multiplicity of spaced and stacked wafer substrates by means of an inert mounting and retaining same within a reaction vessel; applying heat by external means, to the wall of the reaction vessel to raise the substrates to an appropriate reaction temperature; and, admitting as a single gaseous stream, at one end of the reaction vessel, a carrier gas together with appropriate vapour-phase reagents (at least one of which reagents is metal organic), and extracting same at the other end thereof, whilst maintaining said reagents at a reduced pressure in the range 10 -2 millibars to 10 millibars, approximately, to ensure uniform diffusion thereof, thereby to deposit a compound semiconductor film upon the exposed surface of each substrate.
Claim 2
Independent Claim
133 words
A method of metal-organic chemical vapour deposition of compound semiconductor film, this method comprising: supporting a multiplicity of spaced and stacked wafer substrates by means of an inert mounting and retaining same within a reaction vessel; applying heat by external means, to the wall of the reaction vessel to raise the substrates to an appropriate reaction temperature; and, admitting as a single gaseous stream, at one end of the reaction vessel, a carrier gas together with appropriate vapour-phase reagents (at least one of which reagents is metal organic), and extracting same at the other end thereof, whilst maintaining said reagents at a reduced pressure in the range 10 -2 millibars to 10 millibars, approximately, to ensure uniform diffusion thereof, thereby to deposit a compound semiconductor film upon the exposed surface of each substrate.
Claim 3
Dependent Claim
23 words
A method, as claimed in claim 1, wherein the vapour-phase reagents comprise a group III metal-organic reagent and a group V metal-organic reagent.
Claim 4
Dependent Claim
22 words
A method, as claimed in claim 1, wherein the vapour-phase reagents comprise a group III metal-organic reagent and a group V hydride.
Claim 5
Dependent Claim
15 words
A method, as claimed in claim 3, wherein the vapour-phase reagents comprise trimethyl-gallium and arsine.
Claim 6
Dependent Claim
23 words
A method, as claimed in claim 1, wherein the vapour-phase reagents comprise a group II metal-organic reagent and a group VI metal-organic reagent.
Claim 7
Dependent Claim
22 words
A method, as claimed in claim 1, wherein the vapour-phase reagents comprise a group II metal-organic vapour and a group VI hydride.
Claim 8
Dependent Claim
17 words
A method, as claimed in claim 6, wherein the vapour-phase reagents comprise dimethyl zinc and hydrogen sulphide.
Claim 9
Independent Claim
214 words
A method of metal-organic chemical vapour deposition of a compound semiconductor film, comprising the steps of: supporting a multiplicity of spaced and stacked wafer substrates by means of an inert mounting and retaining the supported substrates and mounting within a reaction vessel; applying heat by external means to the wall of the reaction vessel to raise the substrates to an appropriate reaction temperature; admitting a carrier gas at one end of the reaction vessel via a gas manifold and an input flow control valve and venting the carrier gas from the other end of the reaction vessel via an output pressure control valve and vacuum system, the pressure within the reaction vessel being maintained at a reduced pressure in the range of about 10 -2 millibars to 10 millibars; and introducing appropriate vapour-phase reagents, at least one of said reagents being metal organic, into said carrier gas in the gas manifold and admitting the carrier gas together with the appropriate vapour-phase reagents as a single gaseous stream at said one end of the reaction vessel, while maintaining said reagents at a reduced pressure in the range of about 10 -2 millibars to 10 millibars to ensure uniform diffusion thereof, thereby depositing a compound semiconductor film on the exposed surface of each of said substrates.
Claim 10
Independent Claim
214 words
A method of metal-organic chemical vapour deposition of a compound semiconductor film, comprising the steps of: supporting a multiplicity of spaced and stacked wafer substrates by means of an inert mounting and retaining the supported substrates and mounting within a reaction vessel; applying heat by external means to the wall of the reaction vessel to raise the substrates to an appropriate reaction temperature; admitting a carrier gas at one end of the reaction vessel via a gas manifold and an input flow control valve and venting the carrier gas from the other end of the reaction vessel via an output pressure control valve and vacuum system, the pressure within the reaction vessel being maintained at a reduced pressure in the range of about 10 -2 millibars to 10 millibars; and introducing appropriate vapour-phase reagents, at least one of said reagents being metal organic, into said carrier gas in the gas manifold and admitting the carrier gas together with the appropriate vapour-phase reagents as a single gaseous stream at said one end of the reaction vessel, while maintaining said reagents at a reduced pressure in the range of about 10 -2 millibars to 10 millibars to ensure uniform diffusion thereof, thereby depositing a compound semiconductor film on the exposed surface of each of said substrates.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-22 | 1993-07-24 | 1994-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-22 | 1997-07-24 | 1998-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-22 | 2001-07-24 | 2002-01-23 | $7700.00 | Window Closed / Lapsed |