Nonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell erase

Claim 1

A nonvolatile memory cell comprising: a body of semiconductor material of first conductivity type; source and drain regions of second conductivity type extending into said body from a surface; a channel region extending to said surface between said source and drain regions; a first layer of insulating material of a first thickness on said surface above said source, drain and channel regions; a tunnel window insulation area included on said surface and within said first insulating material, said tunnel window insulation area having a thickness less than said first thickness and said tunnel window insulation area having a portion extending above a portion of said drain region and a portion extending above said surface of the body adjacent to said drain region; a floating gate on said first layer of insulating material and over at least a portion of said tunnel window insulation area, said floating gate having one edge overlying a portion of said drain region with said overlying edge portion extending over said tunnel window insulation area thereby defining a floating gate to drain region tunnel area in which the floating gate is closer to said drain region than is the remaining portion of said floating gate edge overlying said drain region, said floating gate to drain tunnel area being positioned such that the distance from said source region to floating gate to drain tunnel area is greater than the shortest distance, measured across said channel region, between said source region and said drain region; a second layer of insulating material covering said floating gate; and a control gate on said second layer of insulating material overlying said floating gate.