Abstract A semiconductor device and method of making the device in which portions of the device may be completed prior to forming the detector region. The device comprises a substrate, a first insulating layer over the substrate, a first level semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, a metallic contact extending through the second insulating layer and a third insulating layer overlying the contact. A detector region is spaced apart from the contact. The method comprises the steps of forming a first insulating layer over the substrate, forming a semiconductor layer over the first insulating layer, forming a contact through the second insulating layer, forming a third insulating layer over the contact and forming an opening through the first, second and third insulating layers and forming a detector region in the opening.
A semiconductor device for detecting radiation comprising: a substrate having a major surface; a first insulating layer overlying a portion of said surface; a first level semiconductor layer disposed completely within said first insulating layer; a second insulating layer overlying said first level semiconductor layer; a first metallic contact which extends through said second insulating layer and electrically contacts said first level semiconductor layer; a third insulating layer overlying said metallic contact; and a detector region which is spaced apart from said metallic contact and said detector region extends through said first, second and third insulating layers to said major surface.
Claim 2
Dependent Claim
101 words
A semiconductor device for detecting radiation comprising: a substrate having a major surface; a first insulating layer overlying a portion of said surface; a first level semiconductor layer disposed completely within said first insulating layer; a second insulating layer overlying said first level semiconductor layer; a first metallic contact which extends through said second insulating layer and electrically contacts said first level semiconductor layer; a third insulating layer overlying said metallic contact; and a detector region which is spaced apart from said metallic contact and said detector region extends through said first, second and third insulating layers to said major surface.
Claim 3
Dependent Claim
17 words
The device of claim 1 wherein said device is an infrared sensing detector having charge-coupled devices therein.
Claim 4
Dependent Claim
13 words
The device of claim 2 wherein said detector region comprises a Schottky-barrier detector.
Claim 5
Dependent Claim
13 words
The device of claim 3 wherein said third insulating layer comprises silicon nitride.
Claim 6
Dependent Claim
45 words
The device of claim 3 wherein said second level semiconductor layer overlies said first insulating layer and a second metallic contact extends through said second insulating layer and electrically contact said second level semiconductor layer, and said third insulating layer overlies said second metallic contact.
Claim 7
Dependent Claim
30 words
The device of claim 3 wherein said detector region comprises a metal silicide film, a dielectric region overlying said metal silicide film and a reflective layer overlying said dielectric region.
Claim 8
Dependent Claim
17 words
The device of claim 3 wherein said metallic contact is composed of aluminum or an aluminum alloy.