Method of integrating infrared sensitive image recording element with CCD on same substrate

Claim 1

A method of producing a semiconductor arrangement including an image recording unit composed of a plurality of mutually separated mosaic regions formed of a monocrystalline infrared sensitive compound semiconductor material, and each including at least one pn-junction, disposed on the surface of an insulating layer which at least partially covers the surface of a semiconductor body containing an integrated circuit which functions as a read out unit for said image recording unit, said method comprising: initially applying a layer of IR-sensitive compound semiconductor material in polycrystalline form over the entire area of said insulating layer covering said semiconductor body of said integrated circuit; subsequently dividing said semiconductor layer into separate individual said mosaic regions by etching away the intermediate areas; converting the individual polycrystalline mosaic regions to mono-crystalline mosaic regions by melting the individual mosaic regions by means of a focused high energy beam and then permitting these melted regions to resolidify in mono-crystalline form because of the subsequent mono-crystalline growth of the layer; and finally, introducing a pn-junction into said mono-crystalline mosaic regions by diffusion or implantation of impurities.

Claim 2

A method of producing a semiconductor arrangement including an image recording unit composed of a plurality of mutually separated mosaic regions formed of a monocrystalline infrared sensitive compound semiconductor material, and each including at least one pn-junction, disposed on the surface of an insulating layer which at least partially covers the surface of a semiconductor body containing an integrated circuit which functions as a read out unit for said image recording unit, said method comprising: initially applying a layer of IR-sensitive compound semiconductor material in polycrystalline form over the entire area of said insulating layer covering said semiconductor body of said integrated circuit; subsequently dividing said semiconductor layer into separate individual said mosaic regions by etching away the intermediate areas; converting the individual polycrystalline mosaic regions to mono-crystalline mosaic regions by melting the individual mosaic regions by means of a focused high energy beam and then permitting these melted regions to resolidify in mono-crystalline form because of the subsequent mono-crystalline growth of the layer; and finally, introducing a pn-junction into said mono-crystalline mosaic regions by diffusion or implantation of impurities.

Claim 22

A method of producing a semiconductor device including an image recording unit composed of an array of a plurality of separated detector mosaic regions of infrared sensitive monocrystalline compound semiconductor material disposed on an integrated silicon semiconductor CCD circuit which functions as a read-out unit, said method comprising the steps of providing a Si-CCD suitable for IR-detector signal read-out of an image recording unit; depositing an insulating layer of the desired composition and thickness over a surface of said Si-CCD; depositing a polycrystalline layer of a compound semiconductor material, which in its monocrystalline state forms an infrared detector material, onto said insulating layer; etching said layer of polycrystalline material to divide same into separate mosaic regions corresponding to the desired detector array structure; recrystallizing said polycrystalline mosaic regions to monocrystalline form by irradiation with light of the desired energy and power while applying a vapor pressure of inert gas or of the more volatile components of the material being recrystallized; thereafter annealing the complete device under conditions which permit homogenization of the recrystallized material and desired electrical properties thereof; thereafter forming a pn-junction in each of the detector mosaic regions; and interconnecting the detector mosaic regions with the input structures of the Si-CCD by deposited metal conductors extending through openings in said insulating layer.

Claim 23

A method of producing a semiconductor device including an image recording unit composed of an array of a plurality of separated detector mosaic regions of infrared sensitive monocrystalline compound semiconductor material disposed on an integrated silicon semiconductor CCD circuit which functions as a read-out unit, said method comprising the steps of providing a Si-CCD suitable for IR-detector signal read-out of an image recording unit; depositing an insulating layer of the desired composition and thickness over a surface of said Si-CCD; depositing a polycrystalline layer of a compound semiconductor material, which in its monocrystalline state forms an infrared detector material, onto said insulating layer; etching said layer of polycrystalline material to divide same into separate mosaic regions corresponding to the desired detector array structure; recrystallizing said polycrystalline mosaic regions to monocrystalline form by irradiation with light of the desired energy and power while applying a vapor pressure of inert gas or of the more volatile components of the material being recrystallized; thereafter annealing the complete device under conditions which permit homogenization of the recrystallized material and desired electrical properties thereof; thereafter forming a pn-junction in each of the detector mosaic regions; and interconnecting the detector mosaic regions with the input structures of the Si-CCD by deposited metal conductors extending through openings in said insulating layer.