SOS extrinsic infrared detector and read-out device

Claim 1

An extrinsic silicon infrared detector array and charge-coupled device readout comprising: a layer of electrical insulator substrate material; a plurality of extrinsic silicon detectors mounted on the bare surface of one side of said substrate material, wherein said plurality of extrinsic silicon detectors are doped for sensitivity in the infrared wavelength region; a silicon CCD signal readout structure mounted on the bare surface of said one side of said substrate material in proximity to but isolated from said plurality of extrinsic silicon detectors; a plurality of input diffusions deposited in said silicon CCD signal readout structure; a buss line voltage source commonly connected to the input side of all of said plurality of extrinsic silicon detectors; an insulating layer deposited over all of said silicon CCD signal readout structure except over said plurality of input diffusions; a plurality of conductive leads electrically connected from an output side of said plurality of extrinsic silicon detectors to said plurality of input diffusions; a plurality of CCD pads deposited on said insulating layer; a CCD phased voltage source; a plurality of CCD voltage drive lines connected between said CCD phased voltage source and said plurality of CCD pads for driving phased voltages across said plurality of CCD pads; an input CCD pad voltage source and driver; and a plurality of input structure pads deposited on said insulating layer between said plurality of input diffusions and said plurality of CCD pads, wherein all of said plurality of input structure pads are commonly electrically connected to said input CCD pad voltage source and driver and are intermittently connected to said CCD pads in some selected phasing from each of said plurality of extrinsic silicon detectors wherein said input CCD pad voltage source and driver sequentially switches a voltage on said plurality of input structure pads to readout signals from said plurality of extrinsic silicon detectors caused by infrared radiation coming through said substrate material impinging thereon and injecting said readout signals in the layer of said silicon CCD signal readout structure that is immediately below said intermittently connected CCD pads for signal readout therefrom in some desired mode.