Bipolar transistor controllable by field effect

Claim 2

An improved field-effect controllable bipolar transistor having a field effect transistor structure with a source side and a drain side, the improvement, comprising: a semiconductor body on which the field effect transistor structure is formed having an inner zone in which life time of minority charge carriers in at least 1 microsecond, a zone at the drain side of said semiconductor body with higher doping than said inner zone and of an opposite conductivity type, said drain side zone being less than 1 micrometer thick and being doped with implanted ions of a dose between 1×10 12 and 1×10 15 cm -2 .

Claim 3

An improved field-effect controllable bipolar transistor as claimed in claim 1, wherein said zone at the drain side has lattice damage caused by implantation and said lattice damage is cured at a temperature below 600 degrees C.

Claim 4

An improved field-effect controlled bipolar transistor as claimed in claim 1, wherein said zone at the drain side has lattice damage caused by implantation and said lattice damage is cured by rapid thermal annealing.

Claim 5

An improved field-effect controlled bipolar transistor as claimed in claim 1, further comprising: a metal layer contacting said zone at the drain side, said metal layer being connected to said semiconductor body by alloying.

Claim 6

An improved field effect controllable bipolar transistor as claimed in claim 4, wherein said metal layer is of aluminum.

Claim 7

An improved field effect controllable bipolar transistor as claimed in claim 1, further comprising: a metal layer contacting said zone at the drain side; and a metal silicide layer connecting said metal layer to said semiconductor body.

Claim 8

An improved field-effect controllable bipolar transistor as claimed in claim 6, wherein said metal layer is composed of a metal selected from the group consisting of: platinum, titanium, tungsten, and molybdenum.

Claim 9

A bipolar transistor controllable by field effect, comprising: a semiconductor body having an inner zone and a source side and a drain side, said inner zone being doped to provide a minority charge carrier life expectancy of at least 10 microseconds; a base zone in said semiconductor body at said source side and being doped to form a p-n junction with said inner zone; a source zone embedded in said base zone and having a higher doping concentration than said base zone; a source side electrode connected to said base zone and said source zone; a drain side zone at said drain side of said semiconductor body and having a higher doping concentration than said of said semiconductor body and having a higher doping concentration than said inner zone, said drain side zone being doped with an opposite conductivity type than said inner zone and having a thickness of up to about one micrometer, said drain said zone being doped with a dose of between 10 12 through 10 15 implanted ions per square centimeter.

Claim 10

A bipolar transistor controllable by field effect, comprising: a semiconductor body having an inner zone and a source side and a drain side, said inner zone being doped to provide a minority charge carrier life expectancy of at least 10 microseconds; a base zone in said semiconductor body at said source side and being doped to form a p-n junction with said inner zone; a source zone embedded in said base zone and having a higher doping concentration than said base zone; a source side electrode connected to said base zone and said source zone; a drain side zone at said drain side of said semiconductor body and having a higher doping concentration than said of said semiconductor body and having a higher doping concentration than said inner zone, said drain side zone being doped with an opposite conductivity type than said inner zone and having a thickness of up to about one micrometer, said drain said zone being doped with a dose of between 10 12 through 10 15 implanted ions per square centimeter.

Claim 11

A bipolar transistor controllable by field effect as claimed in claim 8, wherein said drain side zone has a thickness of about 0.1 micrometer.

Claim 12

A bipolar transistor as claimed in claim 8, wherein said drain side zone is produced by an implantation dose of between 10 13 and 10 14 ions per square centimeter at an energy of 45 keV.

Claim 13

A bipolar transistor as claimed in claim 8, wherein said inner zone has a thickness of about 200 micrometer.