Sputtering method for reducing hillocking in aluminum layers formed on substrates

Claim 1

A method of reducing hillocks occurring in the layer of metal sputtered onto a substrate comprising the steps of: (a) sputtering metal from a target onto the surface of a substrate to deposit a metal layer on such substrate surface; and (b) during such deposition, resputtering metal from the deposited layer to reduce metal grain size in the layer being deposited to an extent that relieves stress causing the reduction of hillock formation in the deposited layer.

Claim 2

A method of reducing hillocks occurring in the layer of metal sputtered onto a substrate comprising the steps of: (a) sputtering metal from a target onto the surface of a substrate to deposit a metal layer on such substrate surface; and (b) during such deposition, resputtering metal from the deposited layer to reduce metal grain size in the layer being deposited to an extent that relieves stress causing the reduction of hillock formation in the deposited layer.

Claim 3

A method of reducing hillocks occuring in the layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) during such deposition, resputtering aluminum from the deposited layer to reduce aluminum grain size in the layer being deposited to an extent that relieves stress causing the reduction of hillock formation in the deposited layer.

Claim 4

A method of reducing hillocks occuring in the layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) during such deposition, resputtering aluminum from the deposited layer to reduce aluminum grain size in the layer being deposited to an extent that relieves stress causing the reduction of hillock formation in the deposited layer.

Claim 5

A method of reducing hillocks occurring in the layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) during such deposition, applying to the substrate a negative potential which is selected to cause a resputtering of some aluminum from the layer which reduces aluminum grain size in the layer being deposited to an extent that relieves stress and causes the reduction of hillock formation in the deposited layer.

Claim 6

A method of reducing hillocks occurring in the layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) during such deposition, applying to the substrate a negative potential which is selected to cause a resputtering of some aluminum from the layer which reduces aluminum grain size in the layer being deposited to an extent that relieves stress and causes the reduction of hillock formation in the deposited layer.

Claim 7

A method of reducing hillocks in a layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) after a portion of the aluminum layer has been formed by step (a) which is sufficient to cover the substrate surface, applying a negative DC potential to the substrate selected to cause resputtering of some aluminum from the layer which reduces aluminum grain size in the layer being deposited to the extent that relieves stress and causing the reduction of hillock formation in the deposited layer.

Claim 8

A method of reducing hillocks in a layer of aluminum sputtered onto a substrate comprising the steps of: (a) sputtering aluminum from a target onto the surface of a substrate to deposit a layer of aluminum on such substrate surface; and (b) after a portion of the aluminum layer has been formed by step (a) which is sufficient to cover the substrate surface, applying a negative DC potential to the substrate selected to cause resputtering of some aluminum from the layer which reduces aluminum grain size in the layer being deposited to the extent that relieves stress and causing the reduction of hillock formation in the deposited layer.