Abstract The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca2+, results in advantageous materials. In particular, very high Curie temperatures, e.g., up to 524 degrees C., in films capable of supporting 1 mu m-sized bubble domains, are observed. Additionally, the change of collapse field with temperatures for magnetic bubble domains in the garnet material is linear and closely parallels over a wide temperature range the change of bubble controlling static field of permanent magnets typically employed in magnetic bubble devices. A substantially constant bubble size is maintainable over a wide temperature range. The desired garnet compositions are produced advantageously from a melt containing a suitable ratio of vanadium to calcium.
A process for growing a garnet film on a substrate comprising the steps of immersing said substrate in a growth melt, growing said film on said substrate, and removing said substrate from said melt characterized in that said process includes the step of producing said growth melt by forming a molten composition containing calcium and vanadium such that the mole ratio of said vanadium to said calcium is above 2.0, wherein said garnet film comprises a composition represented by the formula {RE 3-x Ca x }[M 5-y V y ]O 12 where y is in the range 0.50 to 0.65, where 0<x<3 and wherein said composition is essentially neutral in charge.
Claim 2
Dependent Claim
111 words
A process for growing a garnet film on a substrate comprising the steps of immersing said substrate in a growth melt, growing said film on said substrate, and removing said substrate from said melt characterized in that said process includes the step of producing said growth melt by forming a molten composition containing calcium and vanadium such that the mole ratio of said vanadium to said calcium is above 2.0, wherein said garnet film comprises a composition represented by the formula {RE 3-x Ca x }[M 5-y V y ]O 12 where y is in the range 0.50 to 0.65, where 0<x<3 and wherein said composition is essentially neutral in charge.
Claim 3
Dependent Claim
9 words
The process of claim 1 wherein M includes silicon.
Claim 4
Dependent Claim
13 words
The device of claim 2 wherein M consists essentially of iron and silicon.