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US4034358A Expired / Lapsed US ⏱️ 0.0 years remaining

Magnetic bubble devices with controlled temperature characteristics

Assignee: AT&T Inc
•
Filing: 1975-08-25
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Granted: 1977-07-05
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Expires: 1995-08-25
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Abstract

Abstract The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely match the temperature dependence of bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). Layer growth at higher temperature results in a larger rate of change of collapse field by producing greater octahedral occupation of predominantly tetrahedrally coordinated germanium.

Inventors

  • 👤 Stuart Lawrence Blank

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 23:14
CPC Classifications
H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/20; H01F10/24; G; G11; G11C; G11C19/00; G11C19/02; G11C19/08

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 236 words
A magnetic bubble device comprising (a) a substrate supporting at least a first layer of an iron containing garnet possessing a uniaxial magnetic anisotropy perpendicular to the layer, which layer is capable of supporting magnetic bubbles which are stable and of a characteristic diameter in a temperature varying bias field over a temperature range, which anisotropy is predominantly a growth induced anisotropy produced by dodecahedral site substitution, which bias field is produced by a magnet adapted for maintaining the layer in the bias field throughout the temperature range, which bias field is less than a bubble collapse field at each temperature within the temperature range, and which bias field varies throughout the temperature range at an average variation rate (b) generating means for generating the bubbles; and (c) propagating means for moving the bubbles in order to produce information processing characterized in that the iron garnet is of a composition represented by the atomic formula: R 3 -a (Ca,Sr) a Ge a Fe 5 -a O 12 , where R is at least one member of the group consisting of yttrium and the rare earth elements between numbers 57 and 71 of the Periodic Table of the Elements, wherein the Ge occupies octahedral sites in a relative molar concentration of from 0.01 to 0.1 per formula unit such that the bubble collapse field of the garnet varies with temperature at approximately the said average variation rate.
Claim 2
Dependent Claim 236 words
A magnetic bubble device comprising (a) a substrate supporting at least a first layer of an iron containing garnet possessing a uniaxial magnetic anisotropy perpendicular to the layer, which layer is capable of supporting magnetic bubbles which are stable and of a characteristic diameter in a temperature varying bias field over a temperature range, which anisotropy is predominantly a growth induced anisotropy produced by dodecahedral site substitution, which bias field is produced by a magnet adapted for maintaining the layer in the bias field throughout the temperature range, which bias field is less than a bubble collapse field at each temperature within the temperature range, and which bias field varies throughout the temperature range at an average variation rate (b) generating means for generating the bubbles; and (c) propagating means for moving the bubbles in order to produce information processing characterized in that the iron garnet is of a composition represented by the atomic formula: R 3 -a (Ca,Sr) a Ge a Fe 5 -a O 12 , where R is at least one member of the group consisting of yttrium and the rare earth elements between numbers 57 and 71 of the Periodic Table of the Elements, wherein the Ge occupies octahedral sites in a relative molar concentration of from 0.01 to 0.1 per formula unit such that the bubble collapse field of the garnet varies with temperature at approximately the said average variation rate.
Claim 3
Dependent Claim 50 words
A device of claim 1 in which the substrate is gadolinium gallium garnet and the composition of the first layer of the iron containing garnet can be represented by the atomic formula: Y 1 .92 Sm 0 .1 Ca 0 .98 Ge 0 .98 Fe 4 .02 O 12 .

References Cited (Backward Citations)

US3400116A Cited
US3643238A Cited
US3613056A Cited
US3646529A Cited
US3711841A Cited
US3845477A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-07-04 1981-01-03 1981-07-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-07-04 1985-01-03 1985-07-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-07-04 1989-01-03 1989-07-05 $7700.00 Window Closed / Lapsed

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