Patent US4890307A successfully refreshed from Google Patents.
US4890307A
Expired / Lapsed
US
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Input circuit of charge transfer device
Assignee: Toshiba Corp
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Filing: 1988-05-19
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Granted: 1989-12-26
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Expires: 2008-05-19
Abstract
Abstract A charge transfer device includes a source barrier electrode arranged on portion of an insulation film which lies between a source region and a signal input electrode over a semiconductor substrate and formed to isolate the source region from the signal input electrode, and a source storing electrode for storing substantial source charge. A pulse signal is supplied to the source barrier electrode and source storing electrode, and a D.C. source voltage is applied to the source region.
Inventors
- 👤 Shin-ichi Imai
- 👤 Naoki Hosoya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:49
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
246 words
A charge transfer device comprising: a semiconductor substrate of a first conductivity type; a source region formed in the main surface area of said semiconductor substrate; an insulation film formed on said semiconductor substrate; a signal input electrode formed on said insulating film; a source barrier electrode arranged between said source region and said signal input electrode on said insulation film and formed to isolate said source region from said signal input electrode; a source charge storing electrode arranged adjacent to said source barrier electrode, between said source region and said signal input electrode on said insulation film; an input charge storing electrode formed adjacent to said signal input electrode on said insulation film; a charge injection electrode formed adjacent to said input charge storing electrode on said insulation film; a plurality of charge transfer electrodes formed adjacent to said charge injection electrode on said insulation film; source voltage generating means for generating a D.C. source voltage applied to said source region; first pulse signal generating means for supplying a first pulse signal to said source barrier electrode and said source charge storing electrode; input signal supplying means for supplying an input signal to said signal input electrode; D.C. voltage applying means for applying a preset D.C. voltage to said input charge storing electrode; second pulse signal generating means for supplying a second pulse signal to said charge injection electrode; and transfer pulse signal generating means for supplying transfer pulse signals to said charge transfer electrodes.
Claim 2
Dependent Claim
246 words
A charge transfer device comprising: a semiconductor substrate of a first conductivity type; a source region formed in the main surface area of said semiconductor substrate; an insulation film formed on said semiconductor substrate; a signal input electrode formed on said insulating film; a source barrier electrode arranged between said source region and said signal input electrode on said insulation film and formed to isolate said source region from said signal input electrode; a source charge storing electrode arranged adjacent to said source barrier electrode, between said source region and said signal input electrode on said insulation film; an input charge storing electrode formed adjacent to said signal input electrode on said insulation film; a charge injection electrode formed adjacent to said input charge storing electrode on said insulation film; a plurality of charge transfer electrodes formed adjacent to said charge injection electrode on said insulation film; source voltage generating means for generating a D.C. source voltage applied to said source region; first pulse signal generating means for supplying a first pulse signal to said source barrier electrode and said source charge storing electrode; input signal supplying means for supplying an input signal to said signal input electrode; D.C. voltage applying means for applying a preset D.C. voltage to said input charge storing electrode; second pulse signal generating means for supplying a second pulse signal to said charge injection electrode; and transfer pulse signal generating means for supplying transfer pulse signals to said charge transfer electrodes.
Claim 3
Dependent Claim
84 words
A charge transfer device according to claim 1, wherein said source voltage generating means includes voltage setting means for setting a voltage equal to a potential which is lower than a potential of an area under said source barrier electrode by α; and comparison-control means having first and second input terminals, the first input terminal being connected to receive a voltage set by said voltage setting means as a reference voltage input and the second input terminal being connected to receive the source voltage.
Claim 4
Dependent Claim
150 words
A charge transfer device according to claim 2, wherein said voltage setting means includes a booster circuit for raising a power source voltage to generate a constant voltage; a depletion type MOS transistor having the same gate electrode structure as said source barrier electrode and source charge storing electrode and being connected at one end to the output terminal of said booster circuit; a constant voltage source connected to the gate electrode of said MOS transistor which corresponds to said source barrier electrode for supplying an output voltage having the same voltage level as a high voltage level of the first pulse signal generated from said first pulse generating means; a terminal connected to the gate electrode of said MOS transistor which corresponds to said source charge storing electrode for receiving a D.C. voltage; and a constant voltage source connected between the other end of said MOS transistor and ground.
Claim 5
Dependent Claim
46 words
A charge transfer device according to claim 2, wherein said comparison-control means includes a comparator having a first input terminal connected to receive an output voltage from said voltage setting means and a second input terminal to which an output of said comparator is fed back.
Claim 6
Dependent Claim
81 words
A charge transfer device according to claim 2, wherein said comparison-control means includes a first level shifter circuit having an input terminal connected to the output terminal of said voltage setting means; a comparator having a first input terminal connected to an output terminal of said first level shifter circuit; and a second level shifter circuit having an input terminal connected to an output terminal of said comparator and an output terminal connected to a second input terminal of said comparator.
Claim 7
Dependent Claim
32 words
A charge transfer device according to claim 2, wherein said source voltage generating means further includes booster means for raising a reference voltage under control of the output of said comparison-control means.
Claim 8
Dependent Claim
116 words
A charge transfer device according to claim 6, wherein said booster means includes a reference voltage source for generating a reference voltage; a first MOS transistor of enhancement type having one end connected to receive an output voltage of said reference voltage source and a gate connected to receive a control pulse; a second MOS transistor of enhancement type connected at one end to the other end of said first MOS transistor and having a gate connected to receive an inverted signal of the control pulse; and a capacitor having a first electrode connected to a connection node between said first and second MOS transistors and a second electrode connected to receive an inverted control pulse.
Claim 9
Dependent Claim
105 words
A charge transfer device according to claim 6, wherein said booster means includes a reference voltage source for generating a reference voltage; a first MOS transistor of enhancement type having one end connected to receive an output voltage of said reference voltage source and a gate connected to receive a control pulse; a second MOS transistor of enhancement type having one end and a gate connected to the other end of said first MOS transistor; and a capacitor having a first electrode connected to a connection node between said first and second MOS transistors and a second electrode connected to receive an inverted control pulse.
Claim 10
Dependent Claim
18 words
A charge transfer device according to claim 1, wherein said input signal supplying means includes an input terminal.
Claim 11
Dependent Claim
30 words
A charge transfer device according to claim 1, wherein a D.C. voltage applied from said D.C. voltage applying means to said input charge storing electrode is a power source voltage.
Claim 12
Dependent Claim
38 words
A charge transfer device according to claim 1, wherein a D.C. voltage applied from said D.C. voltage applying means to said input charge storing electrode is derived by dividing the voltage between a power source and a ground.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-25 | 1993-06-26 | 1993-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-25 | 1997-06-26 | 1997-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-25 | 2001-06-26 | 2001-12-26 | $7700.00 | Window Closed / Lapsed |