Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
224 words
A semiconductor device having a semiconductor body and comprising a charge-coupled device provided at a surface of said semiconductor body and comprising an input stage for forming charge packets in response to an input signal, and a row of clock electrodes provided with connection means for applying clock voltages for the sequential storage and transport of these charge packets in an underlying charge transport channel, the input stage comprising, viewed successively in the direction of charge transport, an input diode, a first electrode forming a sample gate and a second electrode forming an input gate, said input diode being provided with a connection for applying a fixed voltage, the input gate being provided with means for applying the input signal, and the sample gate being provided with means for applying a sample clock voltage for opening and closing the connection between the input diode and the region below the input gate, said means for applying the sample clock voltage comprising an amplifier whose output is connected to the first clock electrode following the input gate whose input is connected to the sample clock voltage, whereby upon application of said sample clock voltage a potential well can be induced below the first clock electrode having a sufficient depth to cause the whole charge packet formed below the input gate to flow into this potential well.
Claim 2
Dependent Claim
224 words
A semiconductor device having a semiconductor body and comprising a charge-coupled device provided at a surface of said semiconductor body and comprising an input stage for forming charge packets in response to an input signal, and a row of clock electrodes provided with connection means for applying clock voltages for the sequential storage and transport of these charge packets in an underlying charge transport channel, the input stage comprising, viewed successively in the direction of charge transport, an input diode, a first electrode forming a sample gate and a second electrode forming an input gate, said input diode being provided with a connection for applying a fixed voltage, the input gate being provided with means for applying the input signal, and the sample gate being provided with means for applying a sample clock voltage for opening and closing the connection between the input diode and the region below the input gate, said means for applying the sample clock voltage comprising an amplifier whose output is connected to the first clock electrode following the input gate whose input is connected to the sample clock voltage, whereby upon application of said sample clock voltage a potential well can be induced below the first clock electrode having a sufficient depth to cause the whole charge packet formed below the input gate to flow into this potential well.
Claim 3
Dependent Claim
48 words
A semiconductor device as claimed in claim 1, characterized in that each clock electrode comprises a transfer part and a storage part, and upon application of a clock voltage a potential barrier is induced below the transfer part and a potential well is induced below the storage part.
Claim 4
Dependent Claim
18 words
A semiconductor device as claimed in claim 2, characterized in that the device comprises a two-phase charge-coupled device.
Claim 5
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, 2 or 3, characterized in that the device is a charge-coupled device of the surface channel type.
Claim 6
Dependent Claim
21 words
A semiconductor device as claimed in claim 1, 2 or 3, characterized in that said amplifier comprises a bootstrapped driver circuit.