Thin-film and its forming method

Claim 2

An IC having an electrically insulating layer and an interconnection pattern formed on said electrically insulating layer and comprising a film of an annealed metal material into which hillock-preventing impurities have been introduced following the formation of the film and prior to its annealing, to a dose of at least about 5×10 14 impurity ions per square cm of film and a peak depth after annealing of less than about 800 angstroms from a surface of said interconnection pattern.

Claim 3

An IC as in claim 1 in which said dose is at least about 5×10 15 impurity ion per square cm of film.

Claim 4

A semiconductor device comprising a supporting structure and an interconnection pattern formed on said supporting structure from a metal material wherein said interconnection pattern includes Ar or BF 2 ions implanted therein at a dose level of approximately 10 14 ions/cm 2 or more and peak depth after annealing of less than about 800 angstroms from a surface of said interconnection pattern for preventing production of hillocks on said interconnection pattern.

Claim 5

A semiconductor device comprising a supporting structure and an interconnection pattern formed on said supporting structure from a metal material wherein said interconnection pattern includes Ar or BF 2 ions implanted therein at a dose level of approximately 10 14 ions/cm 2 or more and peak depth after annealing of less than about 800 angstroms from a surface of said interconnection pattern for preventing production of hillocks on said interconnection pattern.

Claim 6

The device of claim 3 wherein said supporting structure includes an electrically insulating layer at a top surface thereof and said interconnection pattern is formed on the electrically insulating layer of said supporting structure.

Claim 7

A semiconductor device comprising: a supporting structure; a first electrically conductive film formed on said supporting structure; a first electrically conductive film formed on said first electrically insulating film, said first electrically conductive film being selectively removed to define a desired pattern and implanted with ions of a selected material other than those forming said first electrically conductive film to a peak depth after annealing of less than about 800 angstroms from a surface of said first electrically conductive film for preventing production of hillocks on said first electrically conductive firm; a second electrically insulating film formed on said first electrically conductive film and on that portion of said first electrically insulating film which is not covered by said first electrically conductive film; and a second electrically conductive film formed on said second electrically insulating film.

Claim 8

A semiconductor device comprising: a supporting structure; a first electrically conductive film formed on said supporting structure; a first electrically conductive film formed on said first electrically insulating film, said first electrically conductive film being selectively removed to define a desired pattern and implanted with ions of a selected material other than those forming said first electrically conductive film to a peak depth after annealing of less than about 800 angstroms from a surface of said first electrically conductive film for preventing production of hillocks on said first electrically conductive firm; a second electrically insulating film formed on said first electrically conductive film and on that portion of said first electrically insulating film which is not covered by said first electrically conductive film; and a second electrically conductive film formed on said second electrically insulating film.

Claim 9

The device of claim 5 wherein said first electrically conductive film comprises a metal.

Claim 10

The device of claim 6 wherein said metal is Al.

Claim 11

The device of claim 6 wherein said first electrically conductive film also includes Si.

Claim 12

The device of claim 5 wherein said ions are selected from the group consisting of Ar, BF 2 , As, P and B.

Claim 13

The device of claim 5 wherein said supporting structure includes a semiconductor structure.

Claim 14

A semiconductor device comprising a supporting structure having an electrically insulating layer at a top surface thereof and an interconnection pattern formed on the electrically insulating layer from a metal material, wherein said interconnection pattern includes ions of a selected material implanted therein at a dose level of approximately 10 15 ions/cm 2 or more, said implanted ions having a distribution whose peak after annealing is located at a depth within 800 angstroms from a surface of said interconnection pattern.

Claim 15

A semiconductor device comprising a supporting structure having an electrically insulating layer at a top surface thereof and an interconnection pattern formed on the electrically insulating layer from a metal material, wherein said interconnection pattern includes ions of a selected material implanted therein at a dose level of approximately 10 15 ions/cm 2 or more, said implanted ions having a distribution whose peak after annealing is located at a depth within 800 angstroms from a surface of said interconnection pattern.

Claim 16

The device of claim 11 wherein said ions are ions of a material selected from the group consisting of As, P, B, Ar and BF 2 .

Claim 17

The device of claim 11 further comprising an interlayer insulating film formed on said interconnection pattern and an additional interconnection pattern formed on said interlayer insulating film.

Claim 18

The device of claim 11 wherein said supporting structure includes at least one PN junction formed therein.

Claim 19

The device of claim 14 wherein said supporting structure includes Si.

Claim 20

The device of claim 11 wherein said interconnection pattern includes a metal.

Claim 21

The device of claim 16 wherein said metal is a material selected from the group consisting of Al, an alloy of Al, Mo, Ti and W.

Claim 22

The device of claim 11 wherein said electrically insulating layer is an oxide of the material of said supporting structure.