Patent US4888820A successfully refreshed from Google Patents.
US4888820A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stacked insulating film including yttrium oxide
Assignee: Texas Instruments Inc
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Filing: 1988-12-06
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Granted: 1989-12-19
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Expires: 2008-12-06
Abstract
Abstract A capacitor, and a method for making the same, are disclosed, wherein one plate of the capacitor comprises silicon. The dielectric material of the capacitor includes a silicon nitride layer disposed adjacent the silicon plate, and a layer of yttrium oxide disposed thereover. The second plate of the capacitor is formed over the yttrium oxide layer. The silicon nitride provides a barrier to the diffusion of silicon into the yttrium oxide film if the structure is heated, providing for a high dielectric constant capacitor dielectric which has improved leakage characteristics.
Inventors
- 👤 Ih-Chin Chen
- 👤 Bing W. Shen
- 👤 James G. Bohlman
- 👤 Hun-Lian Tsai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:00
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10D; H10D84/00; H10D84/01; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/20; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
58 words
A capacitor for an integrated circuit, comprising: a first plate comprising silicon; a first dielectric film comprising silicon nitride disposed adjacent to said first plate; a second dielectric film comprising yttrium oxide disposed adjacent said first dielectric film and opposing said first plate; and a second plate disposed adjacent said second dielectric film and opposing said first plate.
Claim 2
Dependent Claim
58 words
A capacitor for an integrated circuit, comprising: a first plate comprising silicon; a first dielectric film comprising silicon nitride disposed adjacent to said first plate; a second dielectric film comprising yttrium oxide disposed adjacent said first dielectric film and opposing said first plate; and a second plate disposed adjacent said second dielectric film and opposing said first plate.
Claim 3
Dependent Claim
13 words
The capacitor of claim 1, wherein said first plate comprises single crystal silicon.
Claim 4
Dependent Claim
24 words
The capacitor of claim 2, wherein said first plate comprises a sidewall of a a recess etched into a surface of a semiconductor body.
Claim 5
Dependent Claim
21 words
The capacitor of claim 1, wherein said capacitor is formed in a recess etched into a surface of a semiconductor body.
Claim 6
Dependent Claim
12 words
The capacitor of claim wherein said first plate comprises a polysilicon layer.
Claim 7
Dependent Claim
11 words
The capacitor of claim wherein said second plate comprises a metal.
Claim 8
Dependent Claim
10 words
The capacitor of claim 6, wherein said metal is aluminum.
Claim 9
Dependent Claim
55 words
A capacitor formed at a surface of a semiconductor body, comprising: a lower plate comprising silicon dispose near said surface; a first dielectric film comprising silicon nitride disposed over said lower plate; a second dielectric film comprising yttrium oxide disposed over said first dielectric film; and an upper plate disposed over said second dielectric film.
Claim 10
Dependent Claim
55 words
A capacitor formed at a surface of a semiconductor body, comprising: a lower plate comprising silicon dispose near said surface; a first dielectric film comprising silicon nitride disposed over said lower plate; a second dielectric film comprising yttrium oxide disposed over said first dielectric film; and an upper plate disposed over said second dielectric film.
Claim 11
Dependent Claim
16 words
The capacitor of claim 8, wherein said first dielectric film is disposed adjacent said lower plate.
Claim 12
Dependent Claim
16 words
The capacitor of claim 8, wherein said upper plate is disposed adjacent said second dielectric film.
Claim 13
Dependent Claim
17 words
The capacitor of claim 8, wherein said second dielectric film is disposed adjacent said first dielectric film.
Claim 14
Dependent Claim
16 words
The capacitor of claim 8, wherein said upper plate comprises a portion of said semiconductor surface.
Claim 15
Dependent Claim
32 words
The capacitor of claim 8, wherein said upper plate comprises a layer of polysilicon; and further comprising an insulating film disposed between said polysilicon layer and said surface of a semiconductor body.
Claim 16
Dependent Claim
23 words
The capacitor of claim 8, wherein said upper plate comprises a sidewall of a recess formed at said surface of said semiconductor body.
Claim 17
Independent Claim
56 words
A method for fabricating an integrated circuit, comprising: forming a first conductive plate near a surface of a semiconductor body; forming a first dielectric film comprising silicon nitride over said first plate; forming a second dielectric film comprising yttrium oxide over said first dielectric film; and forming a second conductive plate over said second dielectric film.
Claim 18
Independent Claim
56 words
A method for fabricating an integrated circuit, comprising: forming a first conductive plate near a surface of a semiconductor body; forming a first dielectric film comprising silicon nitride over said first plate; forming a second dielectric film comprising yttrium oxide over said first dielectric film; and forming a second conductive plate over said second dielectric film.
Claim 19
Dependent Claim
26 words
The method of claim 15, wherein said step of forming said first conductive plate comprises: doping a silicon region of said surface of said semiconductor body.
Claim 20
Dependent Claim
26 words
The method of claim 15, wherein said step of forming said first conductive plate comprises: forming a polysilicon layer over said surface of said semiconductor body.
Claim 21
Dependent Claim
21 words
The method of claim 15, wherein said step of forming said first dielectric film comprises: chemical vapor deposition of silicon nitride.
Claim 22
Dependent Claim
33 words
The method of claim 15, wherein said step of forming said second dielectric film comprises: depositing a layer of yttrium metal over said first dielectric film; and oxidizing said layer of yttrium metal.
Claim 23
Dependent Claim
21 words
The method of claim 19, wherein said oxidizing step comprises: rapid thermal annealing of the semiconductor body in an oxidizing ambient.
Claim 24
Dependent Claim
26 words
The method of claim 15, wherein said step of forming said second dielectric film comprises: depositing a layer of yttrium oxide over said first dielectric film.
Claim 25
Dependent Claim
37 words
The method of claim 15, further comprising: etching a recess into said surface of said semiconductor body, prior to said step of forming said first conductive plate; wherein said first conductive plate is formed within said recess.
Claim 26
Dependent Claim
37 words
The method of claim 15, further comprising: forming connections between said first and second plates and the external terminals of a package to communicate the charge stored between said first and second plates to said external terminals.
References Cited (Backward Citations)
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