Patent US4887239A successfully refreshed from Google Patents.
US4887239A
Expired / Lapsed
US
⏱️ 0.0 years remaining
One-time programmable data security system for programmable logic device
Assignee: Lattice Semiconductor Corp
•
Filing: 1986-07-07
•
Granted: 1989-12-12
•
Expires: 2006-07-07
Abstract
Abstract A data security fuse system is disclosed for allowing one-time programmability of protected data cells in a reprogrammable logic device, which may determine, for example, the logic architecture of the device. The system includes a fuse enable circuit which may be erased to the disabled state only prior to packaging of the device during manufacture. The protected data cells may be selected for programming by a decoder which decodes cell selection signals. A security fuse circuit is enabled by a fuse enable signal from the activated fuse enable circuit. The security fuse circuit allows the protected cells to be selected once for programming after the system has been activated, and thereafter defeats any attempts to access the protected data cells.
Inventors
- 👤 John E. Turner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:49
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/177; H03K19/17704; G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/22; G11C17/00; G11C17/14; G11C17/18; G11C7/00; G11C7/24; H03K19/17708; H03K19/17748; H03K19/17768
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
437 words
A security circuit for selectively preventing the erasure or programming of predetermined electrically erasable memory cells in an integrated circuit programmable logic device when such programmable logic device is in an edit mode wherein selected electrically erasable cells of the programmable logic can be erased, programmed, or interrogated, comprising: first electrically erasable means for storing first security data having first and second states; first latching means responsive to said first security data for providing a first latching means output having first and second states, said latching means output having the same state as said first security data except during the edit mode when said first latching means output is latched to the same state of said first security data prior to the programmable logic device being in the edit mode; first programming means responsive to first control signals and said first latching means output for electricity erasing said first electrically erasable means to initialize said first security data to said first state and for programming said first security data to said second state in a selected edit mode, said programming means being disabled from resetting said first security data to said first state after said first security data is programmed to said second state; second electrically erasable means for storing second security data having first and second states; second latching means responsive to said second security data for providing a second latching means output having first and second states, said latching means output having the same state as said second security data except during the edit mode when said second latching means output is latched to the same state of said second security data prior to the programmable logic device being in the edit mode; second programming means responsive to second control signals and said first latching means output for electrically erasing said second electrically erasable means to initialize said second security data to said first state and for programming said second security data to said second state when said predetermined electrically erasable memory cells are selected in an edit mode subsequent to the edit mode in which said first security data was programmed to said second state, said programming means being disabled from resetting said second security data to said first state after said first security data is programmed to said second state; and means for disabling erasure or programming of the predetermined electrically erasable memory cells in response to the second state of said second latching means output when the programmable logic device is in an edit mode subsequent to the edit mode in which said second security data was programmed to said second state.
Claim 2
Dependent Claim
437 words
A security circuit for selectively preventing the erasure or programming of predetermined electrically erasable memory cells in an integrated circuit programmable logic device when such programmable logic device is in an edit mode wherein selected electrically erasable cells of the programmable logic can be erased, programmed, or interrogated, comprising: first electrically erasable means for storing first security data having first and second states; first latching means responsive to said first security data for providing a first latching means output having first and second states, said latching means output having the same state as said first security data except during the edit mode when said first latching means output is latched to the same state of said first security data prior to the programmable logic device being in the edit mode; first programming means responsive to first control signals and said first latching means output for electricity erasing said first electrically erasable means to initialize said first security data to said first state and for programming said first security data to said second state in a selected edit mode, said programming means being disabled from resetting said first security data to said first state after said first security data is programmed to said second state; second electrically erasable means for storing second security data having first and second states; second latching means responsive to said second security data for providing a second latching means output having first and second states, said latching means output having the same state as said second security data except during the edit mode when said second latching means output is latched to the same state of said second security data prior to the programmable logic device being in the edit mode; second programming means responsive to second control signals and said first latching means output for electrically erasing said second electrically erasable means to initialize said second security data to said first state and for programming said second security data to said second state when said predetermined electrically erasable memory cells are selected in an edit mode subsequent to the edit mode in which said first security data was programmed to said second state, said programming means being disabled from resetting said second security data to said first state after said first security data is programmed to said second state; and means for disabling erasure or programming of the predetermined electrically erasable memory cells in response to the second state of said second latching means output when the programmable logic device is in an edit mode subsequent to the edit mode in which said second security data was programmed to said second state.
Claim 3
Dependent Claim
21 words
The security circuit of claim 1 wherein said first and second electrically erasable means comprise first and second floating gate transistors.
Claim 4
Dependent Claim
39 words
The security circuit of claim 1 wherein said first programming means includes means for enabling the initialization of said first security data to said first state, said initialization enabling means being disabled after the programmable logic device is packaged.
Claim 5
Dependent Claim
26 words
The security circuit of claim 3 wherein said enabling means comprises an extra wafer probe pad which is inaccessible after the programmable logic device is packaged.
Claim 6
Dependent Claim
26 words
The security circuit of claim 3 wherein said first programming means further includes gating means responsive to said first latching means output and said enabling means.
Claim 7
Dependent Claim
14 words
The security circuit of claim 1 wherein said disabling means comprises an address decoder.
Claim 8
Dependent Claim
45 words
The security circuit of claim 1 wherein said first programming means further selectively and regeneratively erases said first electrically erasable means when the programmable logic device is being programmed in the edit mode and when said first electrically erasable means is in said first state.
Claim 9
Dependent Claim
33 words
The security circuit of claim 1 further comprising means for sensing the state of said first electrically erasable means, said sensing means being adapted to provide margin against high temperature charge loss effects.
Claim 10
Dependent Claim
299 words
A security circuit for selectively preventing the erasure or programming of predetermined electrically erasable memory cells in an integrated circuit programmable logic device when such programmable logic device is in an edit mode wherein selected electrically erasable cells of the programmable logic can be erased, programmed, or interrogated, comprising: first electrically erasable means for storing first security data having first and second states; first programming means responsive to first control signals and said first security data for electrically erasing said first electrically erasable means to initialize said first security data to said first state and for programming said security data to said second state in a selected edit mode, said programming means being disabled from resetting said first security data to said first state after said first security data is programmed to said second state; second electrically erasable means for storing second security data having first and second states; second programming means responsive to second control signals and said first security data for electrically erasing said second electrically erasable means to initialize said second security data to said first state and for programming said second security data to said second state when the predetermined electrically erasable memory cells are selected in an edit mode subsequent to the edit mode in which said first security data was programmed to said second state, said programming means being disabled from resetting said second security data to said first state after said first security data is programmed to said second state; and means for disabling erasure or programming of the predetermined electrically erasable memory cells in response to the second second state of said second security data when the programmable logic device is in an edit mode subsequent to the edit mode in which said second security was programmed to said second state.
Claim 11
Dependent Claim
299 words
A security circuit for selectively preventing the erasure or programming of predetermined electrically erasable memory cells in an integrated circuit programmable logic device when such programmable logic device is in an edit mode wherein selected electrically erasable cells of the programmable logic can be erased, programmed, or interrogated, comprising: first electrically erasable means for storing first security data having first and second states; first programming means responsive to first control signals and said first security data for electrically erasing said first electrically erasable means to initialize said first security data to said first state and for programming said security data to said second state in a selected edit mode, said programming means being disabled from resetting said first security data to said first state after said first security data is programmed to said second state; second electrically erasable means for storing second security data having first and second states; second programming means responsive to second control signals and said first security data for electrically erasing said second electrically erasable means to initialize said second security data to said first state and for programming said second security data to said second state when the predetermined electrically erasable memory cells are selected in an edit mode subsequent to the edit mode in which said first security data was programmed to said second state, said programming means being disabled from resetting said second security data to said first state after said first security data is programmed to said second state; and means for disabling erasure or programming of the predetermined electrically erasable memory cells in response to the second second state of said second security data when the programmable logic device is in an edit mode subsequent to the edit mode in which said second security was programmed to said second state.
Claim 12
Dependent Claim
21 words
The security circuit of claim 9 wherein said first and second electrically erasable means comprise first and second floating gate transistors.
Claim 13
Dependent Claim
39 words
The security circuit of claim 9 wherein said first programming means includes means for enabling the initialization of said first security data to said first state, said initialization enabling means being disabled after the programmable logic device is packaged.
Claim 14
Dependent Claim
26 words
The security circuit of claim 11 wherein said enabling means comprises an extra wafer probe pad which is inaccessible after the programmable logic device is packaged.
Claim 15
Dependent Claim
25 words
The security circuit of claim 11 wherein said first programming means further includes gating means responsive to said first security data and said enabling means.
Claim 16
Dependent Claim
14 words
The security circuit of claim 9 wherein said disabling means comprises an address decoder.
Claim 17
Dependent Claim
45 words
The security circuit of claim 9 wherein said first programming means further selectively and regeneratively erases said first electrically erasable means when the programmable logic device is being programmed in the edit mode and when said first electrically erasable means is in said first state.
Claim 18
Dependent Claim
33 words
The security circuit of claim 9 further comprising means for sensing the state of said first electrically erasable means, said sensing means being adapted to provide margin against high temperature charge loss effects.
References Cited (Backward Citations)
US4295041A
Cited
US4430709A
Cited
US4590552A
Cited
US4603381A
Cited
US4617479A
Cited
US4617479B1
Cited
US4609986A
Cited
US4698750A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-11 | 1993-06-12 | 1993-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-11 | 1997-06-12 | 1997-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-11 | 2001-06-12 | 2001-12-12 | $7700.00 | Window Closed / Lapsed |