Device isolation by etching trench in dielectric on substrate and epitaxially filling the trench

Claim 1

A method of forming a semiconductor device having dielectric isolation regions, said method comprising the steps of: (a) forming a first dielectric layer on a semiconductor substrate; (b) forming a second dielectric layer on selected portions of said first dielectric layer so that a part of said first dielectric layer is exposed; (c) forming a resist layer on selected portions of said second dielectric layer and on a part of the exposed portion of said first dielectric layer so that another part of said exposed part of said first dielectric layer is exposed; (d) subjecting said exposed part of said first dielectric layer obtained in step (c) to reactive ion etching to expose a surface of said semiconductor substrate so that at least one first groove is formed in said first dielectric layer; (e) removing said resist layer to expose said first and second dielectric layers; (f) forming a third dielectric layer on the entire surface of the structure obtained in step (e); (g) subjecting said third dielectric layer to reactive ion etching such that said third dielectric layer is left only on side walls of said first groove and of said second dielectric layer; (h) subjecting the body obtained in step (g) to reactive ion etching to form at least one second groove in said first dielectric layer so that a surface of said substrate is exposed; (i) epitaxially depositing a single crystal semiconductor material in said first and second grooves to a thickness which is substantially the same as the thickness of said first dielectric layer; and (j) removing said third dielectric layer and portions of said second dielectric layer disposed on side walls of said third dielectric layer.

Claim 2

A method of forming a semiconductor device having dielectric isolation regions, said method comprising the steps of: (a) forming a first dielectric layer on a semiconductor substrate; (b) forming a second dielectric layer on selected portions of said first dielectric layer so that a part of said first dielectric layer is exposed; (c) forming a resist layer on selected portions of said second dielectric layer and on a part of the exposed portion of said first dielectric layer so that another part of said exposed part of said first dielectric layer is exposed; (d) subjecting said exposed part of said first dielectric layer obtained in step (c) to reactive ion etching to expose a surface of said semiconductor substrate so that at least one first groove is formed in said first dielectric layer; (e) removing said resist layer to expose said first and second dielectric layers; (f) forming a third dielectric layer on the entire surface of the structure obtained in step (e); (g) subjecting said third dielectric layer to reactive ion etching such that said third dielectric layer is left only on side walls of said first groove and of said second dielectric layer; (h) subjecting the body obtained in step (g) to reactive ion etching to form at least one second groove in said first dielectric layer so that a surface of said substrate is exposed; (i) epitaxially depositing a single crystal semiconductor material in said first and second grooves to a thickness which is substantially the same as the thickness of said first dielectric layer; and (j) removing said third dielectric layer and portions of said second dielectric layer disposed on side walls of said third dielectric layer.

Claim 10

A method of forming a semiconductor substrate having dielectric isolation regions, said method comprising the steps of: forming a first dielectric layer on a silicon substrate; (b) forming a second dielectric layer with a first opening therein on said first dielectric layer, said second dielectric layer being of a material which is different from that of said first dielectric layer and selectively etchable relative thereto; forming on the surface of the structure obtained in step (b) a resist layer having a second opening which is partially superposed over said first opening; (d) forming at least one first groove by etching in said first dielectric layer using said resist layer and said second dielectric layer as a mask so that a surface of said substrate is exposed; (e) removing said resist layer and thereafter forming on the entire surface of the structure obtained in step (d) a third dielectric layer of a material which is different from that of said first dielectric layer and selectively etchable relative thereto; (f) etching said third dielectric layer by an RIE method such that said third dielectric layer is left only on side walls of said first groove and of said second dielectric layer; (g) subjecting the structure obtained in step (f) to reactive ion etching to form at least one second groove in said first opening at a position that is not superposed with said second opening, so that a surface of said substrate is exposed; (h) epitaxially depositing a single crystal silicon in said first and second grooves to a thickness which is substantially the same as the thickness of said first dielectric layer; and (i) removing said third dielectric layer and portions of said second dielectric layer disposed on side walls of said third dielectric layer.

Claim 11

A method of forming a semiconductor substrate having dielectric isolation regions, said method comprising the steps of: forming a first dielectric layer on a silicon substrate; (b) forming a second dielectric layer with a first opening therein on said first dielectric layer, said second dielectric layer being of a material which is different from that of said first dielectric layer and selectively etchable relative thereto; forming on the surface of the structure obtained in step (b) a resist layer having a second opening which is partially superposed over said first opening; (d) forming at least one first groove by etching in said first dielectric layer using said resist layer and said second dielectric layer as a mask so that a surface of said substrate is exposed; (e) removing said resist layer and thereafter forming on the entire surface of the structure obtained in step (d) a third dielectric layer of a material which is different from that of said first dielectric layer and selectively etchable relative thereto; (f) etching said third dielectric layer by an RIE method such that said third dielectric layer is left only on side walls of said first groove and of said second dielectric layer; (g) subjecting the structure obtained in step (f) to reactive ion etching to form at least one second groove in said first opening at a position that is not superposed with said second opening, so that a surface of said substrate is exposed; (h) epitaxially depositing a single crystal silicon in said first and second grooves to a thickness which is substantially the same as the thickness of said first dielectric layer; and (i) removing said third dielectric layer and portions of said second dielectric layer disposed on side walls of said third dielectric layer.