Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase the density of an LSI and improve the performance of an element by using an oxide film wall as an element isolation wall while leaving only an oxide film formed to a polycrystalline silicon wall through oxidation treatment and growing silicon in an epitaxial manner after forming the isolation wall. CONSTITUTION:An Si3N4 (a nitride) film 7 is formed onto a substrate, and a polycrystalline silicon layer 8 is formed onto the nitride film 7 in at least approximately 0.5mum thickness. An oxide film 9a is formed onto the polycrystalline silicon film 8 through thermal oxidation treatment in wet oxygen to the surface of the polycrystalline silicon layer 8. Oxide films 9a, 9b formed onto the polycrystalline silicon layer 8 and the nitride film 7 are etched, and only the oxide film 9c of the side wall section of the polycrystalline silicon layer 8 is left. The polycrystalline silicon layer 8 is removed selectively. The oxide fil 9c is masked, and the nitride film 7 on the substrate 1 is etched. An epitaxial layer 11 is formed by growing P type silicon in an epitaxial manner.

Inventors

• 👤 Nobuo Sasaki
• 👤 伸夫 佐々木
• 👤 Junji Sakurai
• 👤 桜井　潤治

Bibliographic Details