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US4885615A
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Monocrystalline three-dimensional integrated circuit
Assignee: University of Minnesota System
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Filing: 1986-05-12
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Granted: 1989-12-05
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Expires: 2006-05-12
Abstract
Abstract A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.
Inventors
- 👤 Raymond M. Warner, Jr.
- 👤 Ronald D. Schrimpf
- 👤 Alfons Tuszynski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:41
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D30/00; H10D30/80; H10D30/83; H10D88/00; H10D88/01; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
98 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices forming at least two layers of circuitry; b. at least one component from the following group in at least one of said devices; (1) region of lattice-matched monocrystalline metallic material as an ohmic contact, (2) region of lattice-matched monocrystalline metallic material as an interconnecting conductor in said circuit, (3) a lattice-matched monocrystalline insulator substantially surrounding said conductor, (b 4) a lattice-matched monocrystalline insulator substantially surrounding at least one of said devices; and, c. a lattice-matched monocrystalline matrix substantially surrounding the components of the monocrystalline three-dimensional integrated circuit.
Claim 2
Dependent Claim
98 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices forming at least two layers of circuitry; b. at least one component from the following group in at least one of said devices; (1) region of lattice-matched monocrystalline metallic material as an ohmic contact, (2) region of lattice-matched monocrystalline metallic material as an interconnecting conductor in said circuit, (3) a lattice-matched monocrystalline insulator substantially surrounding said conductor, (b 4) a lattice-matched monocrystalline insulator substantially surrounding at least one of said devices; and, c. a lattice-matched monocrystalline matrix substantially surrounding the components of the monocrystalline three-dimensional integrated circuit.
Claim 3
Dependent Claim
12 words
Integrated circuit of claim 1 wherein said ohmic contact is a silicide.
Claim 4
Dependent Claim
16 words
Integrated circuit of claim 2 wherein said ohmic contact is at least a few monolayers thick.
Claim 5
Dependent Claim
14 words
Integrated circuit of claim 1 wherein said interconnecting layer is from the silicide family.
Claim 6
Dependent Claim
14 words
Integrated circuit of claim 4 wherein said interconnecting layer is greater than 500 angstroms.
Claim 7
Dependent Claim
15 words
Integrated circuit of claim 1 wherein said conductor is a metallic phase of cobalt disilicide.
Claim 8
Dependent Claim
11 words
Integrated circuit of claim 1 wherein said insulator is calcium fluoride.
Claim 9
Dependent Claim
124 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of three-dimensional semiconductor devices buried within a monocrystalline monolith and forming at least two layers of circuitry; and, b. at least one component from the following group within at least one of said devices: (1) a region of nonconducting material in at least one of said devices, (2) a region of nonconducting material substantially surrounding at least one of said devices, (3) a region of nonconducting material substantially surrounding an electrical interconnection lead, (4) a region of buried metallic material forming an electrode in at least one of said devices, (5) a region of metallic material forming an ohmic contact to at least one semiconductor region, (6) a region of metallic material forming an electrical interconnection lead.
Claim 10
Dependent Claim
124 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of three-dimensional semiconductor devices buried within a monocrystalline monolith and forming at least two layers of circuitry; and, b. at least one component from the following group within at least one of said devices: (1) a region of nonconducting material in at least one of said devices, (2) a region of nonconducting material substantially surrounding at least one of said devices, (3) a region of nonconducting material substantially surrounding an electrical interconnection lead, (4) a region of buried metallic material forming an electrode in at least one of said devices, (5) a region of metallic material forming an ohmic contact to at least one semiconductor region, (6) a region of metallic material forming an electrical interconnection lead.
Claim 11
Dependent Claim
13 words
Integrated circuit of claim 8 wherein said nonconducting material is a semi-insulating semiconductor.
Claim 12
Dependent Claim
13 words
Integrated circuit of claim 8 wherein said nonconducting material is a lattice-matched insulator.
Claim 13
Dependent Claim
13 words
Integrated circuit of claim 8 wherein said metallic material is a lattice-matched conductor.
Claim 14
Dependent Claim
14 words
Integrated circuit of claim 11 wherein said metallic material is in the silicide family.
Claim 15
Dependent Claim
12 words
Integrated circuit of claim 11 wherein said metallic material is cobalt disilicide.
Claim 16
Dependent Claim
20 words
The three-dimensional monolith of claim 1 comprising at least one buried BJT with a collector region inside the base region.
Claim 17
Dependent Claim
20 words
A three-dimensional monolith of claim 1 comprising at least one buried, three-dimensional merged FET in combination with other three-dimensional devices.
Claim 18
Dependent Claim
88 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of silicide material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 19
Dependent Claim
88 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of silicide material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 20
Dependent Claim
89 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) few monolayers of silicide material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4.) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 21
Dependent Claim
89 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) few monolayers of silicide material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4.) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 22
Dependent Claim
87 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 23
Dependent Claim
87 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of silicide material as an interconnecting conductor in said integrated circuit, (3) an insulator substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional substantially monocrystalline integrated circuit.
Claim 24
Dependent Claim
91 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of material not more than 500 angstroms thick as an interconnecting conductor in said device, (3) an insulator substantially surrounding said conductor, or (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
Claim 25
Dependent Claim
91 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of material not more than 500 angstroms thick as an interconnecting conductor in said device, (3) an insulator substantially surrounding said conductor, or (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
Claim 26
Dependent Claim
88 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of cobalt disilicide as an ohmic contact in said device, (2) region of cobalt disilicide material as an interconnecting conductor in said device, (3) an insulator substantially surrounding said conductor, or (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
Claim 27
Dependent Claim
88 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of cobalt disilicide as an ohmic contact in said device, (2) region of cobalt disilicide material as an interconnecting conductor in said device, (3) an insulator substantially surrounding said conductor, or (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
Claim 28
Dependent Claim
87 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of material as an interconnecting conductor in said device, (3) an insulator of calcium fluoride substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
Claim 29
Dependent Claim
87 words
Monocrystalline three-dimensional integrated circuit comprising: a. plurality of monocrystalline semiconductor devices; b. at least one component from the following group in at least one of said devices; (1) layer of material as an ohmic contact in said device, (2) region of material as an interconnecting conductor in said device, (3) an insulator of calcium fluoride substantially surrounding said conductor, (4) an insulator substantially surrounding at least one of said devices; and, c. single-crystal matrix surrounding said devices thereby completing the monolith of said three-dimensional monocrystalline integrated circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-04 | 1993-06-05 | 1993-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-04 | 1997-06-05 | 1997-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-04 | 2001-06-05 | 2001-12-05 | $7700.00 | Window Closed / Lapsed |