Abstract A voltage-programmable device in which the programming voltage V p and the "off" resistance R i are separately controlled. The device includes a body of semiconductor material having a doped region therein, and an amorphized layer in the doped region and abutting a surface, and a surface layer in the amorphized layer with the surface layer having a resistivity higher than the resistivity of the amorphized layer prior ot programming of the device. The surface layer has a miniscule thickness (on the order of 50-150 Angstroms) and does not affect the programming of the device. Moreover, the final resistance of the programmed device is not significantly affected by the presence of the first layer. The amorphized layer is formed by ion implantation, and the or by oxygen plasma treatment.
A non-erasable voltage-programmable semiconductor device comprising a semiconductor material having a doped region therein of one conductivity type, an amorphized layer of said one conductivity type in said doped region abutting a surface, and a surface layer on said amorphized layer, said surface layer having a resistivity higher than the resistivity of said amorphized layer prior to programming of said device and a permanently lower resistivity after programming.
Claim 2
Dependent Claim
68 words
A non-erasable voltage-programmable semiconductor device comprising a semiconductor material having a doped region therein of one conductivity type, an amorphized layer of said one conductivity type in said doped region abutting a surface, and a surface layer on said amorphized layer, said surface layer having a resistivity higher than the resistivity of said amorphized layer prior to programming of said device and a permanently lower resistivity after programming.
Claim 3
Dependent Claim
37 words
The device as defined by claim 1 wherein said amorphized layer is formed by a first ion implantation in said doped region, and said surface layer is formed by a second ion implantation in said amorphized layer.
Claim 4
Dependent Claim
33 words
The device as defined by claim 1 wherein said amorphized layer is formed by a first ion implantation, and said surface layer is formed by treating said amorphized layer with an oxygen plasma.
Claim 5
Dependent Claim
22 words
The device as defined by claim 1 wherein the thickness of said surface layer is on the order of 50 Å-150 Å.
Claim 6
Dependent Claim
16 words
The device as defined by claim 4 and further including a contact to said surface layer.
Claim 7
Dependent Claim
16 words
The device as defined by claim 1 and further including a contact to said surface layer.