US4881112A
Expired / Lapsed
US
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IC with recombination layer and guard ring separating VDMOS and CMOS or the like
Assignee: Nissan Motor Co Ltd
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Filing: 1988-05-20
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Granted: 1989-11-14
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Expires: 2008-05-20
Abstract
Abstract In an integrated circuit device having a highly doped bottom substrate layer of a first conductivity type, a lightly doped top layer of the first conductivity type formed on the substrate layer, a vertical MOSFET formed in the lightly doped top layer and a second circuit component, such as a CMOS, formed in the lightly doped top layer, there are further provided a guard ring and a recombination layer for preventing latchup of the second component by preventing minority carriers from moving from the vertical MOSFET to the second component. The guard ring is formed in the lightly doped top layer between the vertical MOSFET and the second component, and made of a second conductivity type single crystal semiconductor, or a first conductivity type polycrystalline silicon or an insulating material such as SiO 2 . The recombination layer is formed between the bottom substrate layer and the lightly doped top layer so as to separate at least the second component from the bottom substrate layer, and made of the first conductivity type polycrystalline silicon.
Inventors
- 👤 Tsutomu Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/157; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/10; H10W10/181; H10W10/30; H10W15/00; H10W15/01; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
144 words
A semiconductor device comprising: a highly doped lower layer of a first conductivity type, formed in a substrate body, a lightly doped upper layer of said first conductivity type, formed above said highly doped lower layer within said body, a vertical MOSFET formed in a first portion of said lightly doped upper layer so that said lightly doped layer is used as a substantial drain region of said vertical MOSFET, a second circuit component formed in a second portion of said lightly doped upper layer, a guard ring formed in said lightly doped upper layer so as to separate said first and second portions, and a recombination layer for facilitating recombination of minority carriers, said recombination layer being formed between said highly doped lower layer and at least said second portion of said lightly doped upper layer, said guard ring reaching said recombination layer.
Claim 2
Dependent Claim
144 words
A semiconductor device comprising: a highly doped lower layer of a first conductivity type, formed in a substrate body, a lightly doped upper layer of said first conductivity type, formed above said highly doped lower layer within said body, a vertical MOSFET formed in a first portion of said lightly doped upper layer so that said lightly doped layer is used as a substantial drain region of said vertical MOSFET, a second circuit component formed in a second portion of said lightly doped upper layer, a guard ring formed in said lightly doped upper layer so as to separate said first and second portions, and a recombination layer for facilitating recombination of minority carriers, said recombination layer being formed between said highly doped lower layer and at least said second portion of said lightly doped upper layer, said guard ring reaching said recombination layer.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1 wherein said recombination layer is made of a material capable of promoting the recombination of carriers.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 2 wherein said recombination layer is a polycrystalline silicon layer.
Claim 5
Dependent Claim
22 words
A semiconductor device according to claim 3 wherein said polycrystalline silicon layer is doped with an impurity of said first conductivity type.
Claim 6
Dependent Claim
41 words
A semiconductor device according to claim 1 wherein said recombination layer is formed on said highly doped lower layer, and said first and second portions of said lightly doped upper layer and said guard ring are formed on said recombination layer.
Claim 7
Dependent Claim
51 words
A semiconductor device according to claim 1 wherein said recombination layer is formed on said highly doped lower layer, and said second portion and said guard ring are formed on said recombination layer while said first portion of said lightly doped layer is formed directly on said highly doped lower layer.
Claim 8
Dependent Claim
27 words
A semiconductor device according to claim 1 wherein said guard ring is a semiconductor region of said second conductivity type, formed in said lightly doped upper layer.
Claim 9
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein said guard ring is made of an insulating material.
Claim 10
Dependent Claim
16 words
A semiconductor device according to claim 8 wherein said guard ring is made of silicon dioxide.
Claim 11
Dependent Claim
21 words
A semiconductor device according to claim 1 wherein said guard ring is a polycrystalline silicon region of said first conductivity type.
Claim 12
Dependent Claim
54 words
A semiconductor device according to claim 1, wherein said substrate body has a lower surface bordering said lower layer, and an upper surface bordering said upper layer, said recombination layer being positioned between said upper and lower surfaces of said substrate body, and extends substantially in parallel to said upper and lower surfaces thereof.
Claim 13
Dependent Claim
91 words
A semiconductor device according to claim 11, wherein said vertical MOSFET comprises a channel region of a second conductivity type opposite to said first conductivity type, and a source region of said first conductivity type, said channel region extending from said upper surface of said substrate body into said upper layer, said source region extending from said upper surface into said channel region, said recombination layer being deeper within said upper surface of said substrate body than said channel region, so that said channel region does not reach said recombination layer.
Claim 14
Dependent Claim
125 words
A semiconductor device according to claim 11, wherein said second circuit component is a CMOS comprising a first pair of source and drain regions of said second conductivity type which both extend from said upper surface of said substrate body into said upper layer, and a second pair of source and drain regions of said first conductivity type which both extend from said upper surface of said substrate body into a wall region of said second conductivity type which extends from said upper surface of said substrate body into said upper layer, wherein said recombination layer is deeper within said upper surface of said substrate body than said well region, so that said wall region is separated from said recombination layer by said upper layer.
Claim 15
Dependent Claim
25 words
A semiconductor device according to claim 11, wherein said guard ring extends vertically from said upper surface of said substrate body into said upper layer.
Claim 16
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said recombination layer is a layer having a crystal lattice structure which is more imperfect than either of said upper and lower layers.
Claim 17
Dependent Claim
27 words
A semiconductor device according to claim 15, wherein said first layer is formed in a single crystal, and said lower layer is formed in another single crystal.
Claim 18
Dependent Claim
38 words
A semiconductor device according to claim 15, wherein said recombination layer is interposed between said upper and lower layers by bonding a first semiconductor wafer comprising said upper layer and a second semiconductor wafer comprising said lower layer.
Claim 19
Dependent Claim
48 words
A semiconductor device according to claim 11, wherein said vertical MOSFET comprises a bottom drain electrode formed on said lower surface of said substrate body, a topside source electrode formed on said upper surface of said substrate body, and an insulated gate electrode formed above said upper surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-13 | 1993-05-15 | 1993-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-13 | 1997-05-15 | 1997-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-13 | 2001-05-15 | 2001-11-14 | $7700.00 | Window Closed / Lapsed |