Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
65 words
An information storage medium comprising: a substrate; a recording layer adapted to undergo phase transformation between different crystal phases when exposed to a light beam, said recording layer containing an InSb alloy; a first protective layer interposed between said substrate and said recording layer; and a second protective layer disposed on said recording layer; said first and second protective layers including an amorphous silicon-containing material.
Claim 2
Dependent Claim
65 words
An information storage medium comprising: a substrate; a recording layer adapted to undergo phase transformation between different crystal phases when exposed to a light beam, said recording layer containing an InSb alloy; a first protective layer interposed between said substrate and said recording layer; and a second protective layer disposed on said recording layer; said first and second protective layers including an amorphous silicon-containing material.
Claim 3
Dependent Claim
19 words
An information storage medium according to claim 1, wherein said first and second protective layers are formed by sputtering.
Claim 4
Dependent Claim
27 words
An information storage medium according to claim 1, wherein said first and second protective layers have a thickness greater than 100 Å and smaller than 2,800 Å.
Claim 5
Dependent Claim
25 words
An information storage medium according to claim 4, wherein said first and second protective layers have a thickness ranging from 300 Å to 1,200 Å.
Claim 6
Dependent Claim
28 words
An information storage medium according to claim 1, further comprising a third protective layer disposed on the second protective layer, said third protective layer containing an organic resin.
Claim 7
Dependent Claim
76 words
An information storage medium comprising: a substrate; a recording layer which contains an InSb alloy and which undergoes phase transformation between different crystal phases within the recording layer when exposed to a light beam, said transformation between different crystal phases corresponding to recorded and erased portions, respectively; and a first protective layer interposed between the substrate and the recording layer, wherein said first protective layer comprises an amorphous silicon-containing material and thermally insulates said recording layer.
Claim 8
Dependent Claim
76 words
An information storage medium comprising: a substrate; a recording layer which contains an InSb alloy and which undergoes phase transformation between different crystal phases within the recording layer when exposed to a light beam, said transformation between different crystal phases corresponding to recorded and erased portions, respectively; and a first protective layer interposed between the substrate and the recording layer, wherein said first protective layer comprises an amorphous silicon-containing material and thermally insulates said recording layer.
Claim 9
Dependent Claim
27 words
An information storage medium according to claim 6, further comprising a second protective layer disposed on said recording layer, said second protective layer containing an organic resin.
Claim 10
Dependent Claim
16 words
An information storage medium according to claim 7, wherein said recording layer contains an InSb alloy.
Claim 11
Dependent Claim
27 words
An information storage medium according to claim 7, wherein said first and second protective layers have a thickness greater than 100 Å and smaller than 2,800 Å.
Claim 12
Dependent Claim
25 words
An information storage medium according to claim 9, wherein said first and second protective layers have a thickness ranging from 300 Å to 1,200 Å.
Claim 13
Independent Claim
67 words
A method of manufacturing an information storage medium, comprising the steps of: forming a first protective layer including an amorphous silicon-containing material, on a substrate by sputtering; and forming a recording layer on said first protective layer, wherein said recording layer contains InSb alloy and is adapted to undergo phase transformation between different crystal phases when exposed to a light beam, whereby information is recorded and erased.
Claim 14
Independent Claim
67 words
A method of manufacturing an information storage medium, comprising the steps of: forming a first protective layer including an amorphous silicon-containing material, on a substrate by sputtering; and forming a recording layer on said first protective layer, wherein said recording layer contains InSb alloy and is adapted to undergo phase transformation between different crystal phases when exposed to a light beam, whereby information is recorded and erased.
Claim 15
Dependent Claim
25 words
A method according to claim 11, further comprising a step of forming, on said recording layer, a second protective layer including an amorphous silicon-containing material.
Claim 16
Dependent Claim
29 words
A method according to claim 12, further comprising a step of forming a third protective layer on said second protective layer, said third protective layer containing an organic resin.
Claim 17
Dependent Claim
24 words
A method according to claim 11, further comprising a step of forming, on said recording layer, a second protective layer containing an organic resin.