EP0184452A2
Expired / Lapsed
EP
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Optical information memory medium and methods and apparatus using such a medium
Assignee: Fujitsu Ltd
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Filing: 1985-12-05
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Granted: —
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Expires: 2005-12-05
Abstract
Abstract Recording and erasure of optical information can be performed upon an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics, by irradiating the film with optical energies under different conditions. Alloys comprising two or more elements capable of forming a eutectic mixture may be used to form the alloy film.
Inventors
- 👤 Nagaaki Koshino
- 👤 Miyozo Maeda
- 👤 Yasuyuki Goto
- 👤 Itaru Shibata
- 👤 Kenichi Utsumi
- 👤 Akira Ushioda
- 👤 Ken-Ichi Itoh
- 👤 Kozo Sueishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 05:02
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; G11B7/2433; G11B7/252; G11B7/257; G11B7/004; G11B2007/24302; G11B2007/2431; G11B2007/24314; G11B7/254; G11B7/2542; G11B7/2572; G11B7/2578; Y; Y10; Y10S; Y10S430/00; Y10S430/146; Y10S430/165
Claims Analysis
Total Claims: 65
Claim 1
Independent Claim
49 words
An optical information memory medium comprising a memory film, wherein said memory film is capable of selectively forming two stable crystalline states differing in crystal texture and optical characteristics by irradiating said memory film with optical energies under different conditions, whereby recording and/or erasing of information may be effected.
Claim 2
Dependent Claim
49 words
An optical information memory medium comprising a memory film, wherein said memory film is capable of selectively forming two stable crystalline states differing in crystal texture and optical characteristics by irradiating said memory film with optical energies under different conditions, whereby recording and/or erasing of information may be effected.
Claim 3
Dependent Claim
75 words
An optical information memory medium according to claim 1, wherein by irradiating a spot of said memory film with optical energies under different conditions, the spot of the memory film can be fused and then solidified to form different distributions, in the spot of the memory film, of crystallites having different reflectances or transmittances such that the reflection or transmission of an optical beam from or through the spot of the memory film is different.
Claim 4
Dependent Claim
45 words
An optical information memory medium according to claim 1, or 2 wherein the memory film comprises two or more elements capable of forming an eutectic mixture and has a composition close to an eutectic mixture in a equilibrium diagram of said two or more elements.
Claim 5
Dependent Claim
32 words
An optical information memory medium according to claim 1, 2 or 3 wherein said memory film comprises 80 atom% or less of indium (In) and 20 atom% or more of antimony (Sb).
Claim 6
Dependent Claim
27 words
An optical information memory medium according to claim 4, wherein said memory film comprises 15 to 50 atom% of In and 50 to 85 atom% of Sb.
Claim 7
Dependent Claim
27 words
An optical information memory medium according to claim 4, wherein said memory film comprises 35 to 45 atom% of In and 55 to 65 atom% of Sb.
Claim 8
Dependent Claim
49 words
An optical information memory medium according to claim 4, 5, or 6, wherein said memory film further comprises 20 atom% or less of one or more elements_selected from the group consisting of Al, Si, P, S, Zn, Ga, Ge, As, Se, Ag, Cd, Sn, Te, Tl, Pb, and Bi.
Claim 9
Dependent Claim
49 words
An optical information memory medium according to claim 4, 5, or 6, wherein said memory film further comprises 5 to 20 atom% of one or more elements selected from the group consisting of Se, Si, P, S, Ge, As, Zn, A1, Ag, Cd, Sn, Pb, Te, Bi, and Ga.
Claim 10
Dependent Claim
31 words
An optical information memory medium according 2, or 3, to claim 1,/wherein said memory film comprises 70 atom% or less of thallium (Tl) and 30 atom% or more of bismuth (Bi).
Claim 11
Dependent Claim
28 words
An optical information memory medium according to claim 9, wherein said memory film comprises 10 to 40 atom % of Tl and 60 to 90 atom% of Bi.
Claim 12
Dependent Claim
27 words
An optical information memory medium according to claim 10, wherein said memory film comprises 20 to 30 atom% of Tl and 70 to 80 atom% of Bi.
Claim 13
Dependent Claim
49 words
An optical information memory medium according 10 or 11, to claim 9,/wherein said memory film further comprises 20 atom% or less of one or more elements selected from the grop consisting of Al, Si, P, S, Zn, Ga, Ge, As, Se, Ag, Cd, In, Sn, Sb, Te, and Pb.
Claim 14
Dependent Claim
48 words
An optical information memory film according to claim 9, 10, or 11, wherein said memory film further comprises 5 to 20 atom% of one or more elements selected from the group of A, P, S, Se, Te, Zn, Al, Si, Ge, Ag, Cd, Sn, Pb, Sb, and In.
Claim 15
Dependent Claim
31 words
An optical information memory medium according to claim 1,2, or 3, wherein said memory film comprises 85 atom% or less of gallium (Ga) and 15 atom% or more of bismuth (Bi).
Claim 16
Dependent Claim
27 words
An optical information memory medium according to claim 14, wherein said memory film comprises 30 to 60 atom% of Ga and 40 to 70 atom% of Bi.
Claim 17
Dependent Claim
28 words
An optical information memory medium according to claim 15, wherein said memory film comprises 40 to 60 atom% of Ga and 40 to 60 atom% of Bi. -
Claim 18
Dependent Claim
50 words
An optical information memory medium according to claim 14, 15, or 16, wherein said memory film further comprises 20 atom% or less of one or more elements selected from the group consisting of Al, Si, P, S, Zn, Ge, As, Se, Ag, Cd, In, Sn, Sb, Te, Tl, and Pb.
Claim 19
Dependent Claim
39 words
An optical information memory medium according to claim 14, 15, 16, or 17, wherein said memory film further comprises 5 to 20 atom% of Se, P, S, Ge, As, Zn, Al, Ac, Cd, Sn, Pb, Te, Sb, and In.
Claim 20
Dependent Claim
32 words
An optical information memory medium according to claim 1, 2, or 3, wherein said memory film comprises 65 atom% or less of indium (In) and 35 atom% or more of arsenic (As).
Claim 21
Dependent Claim
27 words
An optical information memory medium according to claim 19, wherein said memory film comprises 50 atom% or less of In and 50 atom% or more of As.
Claim 22
Dependent Claim
27 words
An optical information memory medium according to claim 20, wherein said memory film comprises 15 to 25 atom% of In and 75 to 85 atom% of As.
Claim 23
Dependent Claim
48 words
An optical information memory medium according 20 or 21, to claim 19,/wherein said memory film further comprises 20 atom% or less of one or more elements selected from the group of Al, Si, P, S, Zn, Ga, Ge, Bi, Se, Ag, Cd, Sn, Sb, Te, Tl, and Pb.
Claim 24
Dependent Claim
40 words
An optical information memory medium according 20, 21, or 22, to claim 19,/wherein said memory film further comprises 5 to 20 atom% of Ge, Al, Si, Zn, Se, Te, Bi, Pb, Tl, Ag, Sb, Cd, Sn, P, S, and Ga.
Claim 25
Dependent Claim
31 words
An optical information memory medium according 2, or 3, to claim 1,/wherein said memory film comprises 60 to 90 atom% of indium (In) and 10 to 40 atom% of bismuth (Bi).
Claim 26
Dependent Claim
27 words
An optical information memory medium according to claim 24, wherein said memory film comprises 67 to 90 atom% of In and 10 to 33 atom% of Bi.
Claim 27
Dependent Claim
27 words
An optical information memory medium according to claim 25, wherein said memory film comprises 70 to 75 atom% of In and 25 to 30 atom% of Bi.
Claim 28
Dependent Claim
47 words
An optical information memory medium according 25, or 26, to claim 24,/wherein said memory film further comprises 20 atom% less of one or more elements selected from the group of Al, Si, P, S, Zn, Ga, Ge, As, Se, Ag, Gd, Sn, Sb, Te, Tl, and Pb.
Claim 29
Dependent Claim
41 words
An optical information memory medium according to claim 24, 25, 26, or 27, wherein said memory film further comprises 5 to 20 atom% of As, Al, Si, Zn, Ge, Ag, Sb, Se, Te, Sn, Cd, Tl, Pb, Ga, P, and S.
Claim 30
Dependent Claim
31 words
An optical information memory medium according to claim 1, 2, or 3, wherein said memory film comprises 60 atcm% or less of gallium (Ga) and 40 atom% or more antimony (Sb).
Claim 31
Dependent Claim
27 words
An optical information memory medium according to claim 29, wherein said memory film comprises 5 to 50 atom% of Ga and 50 to 95 atom% of Sb.
Claim 32
Dependent Claim
27 words
An optical information memory medium according to claim 30, wherein said memory film comprises 15 to 35 atom% of Ga and 65 to 85 atom% of Sb.
Claim 33
Dependent Claim
42 words
An optical information memory medium according to claim 29,/wherein said memory film further comprises 20 atom% or less of one or more elements selected from the group of Al, Si, P, S, Zn, Ge, As, Se, In, Sn, Te, Bi, and Pb.
Claim 34
Dependent Claim
37 words
An optical information memory medium according 3D, 31 or 32, to claim 29,/wherein said memory film further comprises 5 to 20 atom% of Se, Al, Si, Zn, Ge, As, Sn, Pb, Zn, Te, In, P, and S.
Claim 35
Dependent Claim
50 words
An optical information medium according to claim 1, 2, or 3, wherein said memory film is composed of one element selected from the group consisting of Al-Ca, Al-Ge, Al-Mg, Al-Te, As-Pb, Au-Bi, Bi-Pb, Bi-Sn, Bi-Te, Ca-Mg, Ge-Sb, Ge-Te, In-Sn, In-Te, Mg-Sn, Pb-Sb, Pb-Sn, Pb-Te, Sb-Te, Sn-Te, Sn-Zn, and Sn-Tl alloys.
Claim 36
Dependent Claim
22 words
An optical information memory medium according any preceding to/claim, wherein said two stable crystalline states have substantially no difference in electrical conductance.
Claim 37
Dependent Claim
37 words
An optical information memory medium according any preceding to/claim, wherein said memory film is formed on a substrate by coevaporating, cosputtering or coionplating ingredients of the memory film so as to alloy the ingredients on the substrate.
Claim 38
Dependent Claim
31 words
An optical information memory medium according to any of claims 1 to 35, wherein said memory film is formed on a substrate by evaporating or sputtering an alloy onto a substrate.
Claim 39
Dependent Claim
28 words
An optical information memory medium according to any preceding claim, wherein said memory film has been crystallized by hear treatment after deposition of ingredients thereof onto a substrate.
Claim 40
Dependent Claim
25 words
An optical information memory medium according to any preceding claim, wherein said stable crystalline states comprise crystallites having a size of 5 nm or larger.
Claim 41
Dependent Claim
22 words
An optical information memory medium according to claim 39, wherein said size of the crystallines is larger than 20 to 30 nm.
Claim 42
Dependent Claim
25 words
An optical information memory medium according any preceding to/claim wherein said memory film is formed on a substrate and is covered with a protective film.
Claim 43
Dependent Claim
45 words
An optical information medium according to claim 41, wherein said protective film is made of one or more elements selected from the group consisting of SiO 2 , CeO 2 , SnO 2 , ZnS, PMMA, polystylene, an epoxy resin, and a UV curable resin.
Claim 44
Independent Claim
56 words
A method for recording and/or erasing optical information, wherein a memory film is irradiated with optical energies of different conditions to selectively form two stable crystalline states differing in the crystal texture and the optical characteristics at the portion of the memory film irradiated with the optical energies, whereby recording and/or erasing of information is effected.
Claim 45
Independent Claim
56 words
A method for recording and/or erasing optical information, wherein a memory film is irradiated with optical energies of different conditions to selectively form two stable crystalline states differing in the crystal texture and the optical characteristics at the portion of the memory film irradiated with the optical energies, whereby recording and/or erasing of information is effected.
Claim 46
Dependent Claim
71 words
A method according to claim 43, wherein by irradiating a spot of the memory film with optical energies of different conditions, the spot of the memory film is fused and then solidified to form different distributions of crystallites having different reflectances or transmittances within the spot of the memory film such that the reflection or transmission of an optical beam from or through the spot of the memory film is different.
Claim 47
Dependent Claim
95 words
A method according to claim 43, wherein by irradiating a spot of the memory film with optical energies under different conditions, the spot of the memory film is fused and then solidified to form two states having ccmpositions at a central portion of the spot in which the amount of a certain element or compound of the memory film is higher and lower than that of an eutectic mixture consisting of said certain element or compound and the other element or compound of the memory film, whereby recording and/or erasing is effected. 44, or 45,
Claim 48
Dependent Claim
32 words
A method according to claim 43,/wherein a semiconductor laser, an He-Ne laser, an He-Cd laser or an Ar laser is used as a source of said optical energies. claims 43 to 46,
Claim 49
Dependent Claim
53 words
claims 43 to 46, 47. A method according to any of/ wherein an optical energy for recording having a power of 3 to 20 mW is irradiated for 50 to 2000 ns, and an optical energy for erasing having a power of 1 to 8 mW is irradiated for 0.1 to 10 us.
Claim 50
Dependent Claim
28 words
claims 43 to 47, 48. A method according to any of/ wherein said optical energies are focused onto a surface of the memory film. claims 43 to 48,
Claim 51
Independent Claim
34 words
A method according to any of/ wherein an optical energy beam having a shape of the beam elongating in the direction of recording at the surface of memory film is used for erasing information.
Claim 52
Independent Claim
34 words
A method according to any of/ wherein an optical energy beam having a shape of the beam elongating in the direction of recording at the surface of memory film is used for erasing information.
Claim 53
Independent Claim
32 words
A method for reading optical information, wherein information recorded by selectively forming two stable crystalline states in a memory film are read by optically detecting the selectively formed two stable crystalline states.
Claim 54
Independent Claim
32 words
A method for reading optical information, wherein information recorded by selectively forming two stable crystalline states in a memory film are read by optically detecting the selectively formed two stable crystalline states.
Claim 55
Independent Claim
54 words
An apparatus for recording and/or erasing optical information, wherein a memory film is irradiated with optical energies under different conditions to selectively form two stable crystalline states differing in crystal texture and optical characteristics at the portion of the memory film irradiated with the optical energies, whereby recording and/or erasing of information are effected.
Claim 56
Independent Claim
54 words
An apparatus for recording and/or erasing optical information, wherein a memory film is irradiated with optical energies under different conditions to selectively form two stable crystalline states differing in crystal texture and optical characteristics at the portion of the memory film irradiated with the optical energies, whereby recording and/or erasing of information are effected.
Claim 57
Dependent Claim
71 words
An apparatus according to claim 51, wherein by irradiating a spot of the memory film with optical energies under different conditions, the spot of the memory film is fused and then solidified to form different distributions of crystallites having different reflectances or transmittances within the spot of the memory film such that the reflection or transmission of an optical beam from or through the spot of the memory film is different.
Claim 58
Dependent Claim
92 words
An apparatus according to claim 51, wherein by irradiating a spot of the memory film with optical energies under different conditions, the spot of the memory film is fused and then solidified to form two states having compositions at a central portion of the spot in which the amount of a certain element or compound of the memory film is higher and lower than that of an eutectic mixture consisting of said certain element or compound and the other element or compound of the memory film, whereby recording and/or erasina is effected.
Claim 59
Dependent Claim
32 words
An apparatus according to claim 51, 52, or 53, wherein a semiconductor laser, an He-Ne laser, an He-Cd laser or an Ar laser is used as a source of said optical energies.
Claim 60
Independent Claim
52 words
An apparatus according to any of claims 51 to 54, wherein an optical energy for recording having a power of 3 to 20 mW is irradiated for 50 to 2000 ns, and an optical energy for erasing having a power of 1 to 8 mW is irradiated for 0.1 to 10 µs.
Claim 61
Dependent Claim
28 words
claims 51 to 55, 56. An apparatus according to any of/ wherein said optical energies are focused onto a surface of the memory film. claims 51 to 56,
Claim 62
Independent Claim
35 words
An apparatus according to any of / wherein an optical energy beam having a shape of the beam elongating in the direction of recording at the surface of memory film is used for erasing information.
Claim 63
Independent Claim
35 words
An apparatus according to any of / wherein an optical energy beam having a shape of the beam elongating in the direction of recording at the surface of memory film is used for erasing information.
Claim 64
Independent Claim
32 words
An apparatus for reading optical information, where information recorded by selectively forming two stable crystalline states in a memory film are read by optically detecting the selectively formed two stable crystalline states.
Claim 65
Independent Claim
32 words
An apparatus for reading optical information, where information recorded by selectively forming two stable crystalline states in a memory film are read by optically detecting the selectively formed two stable crystalline states.
References Cited (Backward Citations)
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