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US4875216A
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Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
Assignee: Xerox Corp
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Filing: 1987-11-30
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Granted: 1989-10-17
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Expires: 2007-11-30
Abstract
Abstract A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active region and may have a thickness which is greater than the active region, a refractive index difference with respect to cladding layers which is less than a refractive index difference between the active region and the cladding layers, or both. The waveguide layer may be coupled to the active region via a transition region characterized by a gradual change in the guide mode width of the lightwaves, such as from a tapered increase in thickness of the waveguide layer in a direction away from the active region. The preferred method of making window region having these transparent waveguides is impurity induced disordering, in which the interfaces between active region and cladding layers is disordered by impurity species to produce the waveguide layer with increased bandgap and a graded transverse refractive index profile. The laser is characterized by a high power output beam with reduced far field transverse divergence.
Inventors
- 👤 Robert L. Thornton
- 👤 Robert D. Burnham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:41
CPC Classifications
B; B82; B82Y; B82Y20/00; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/162; H01S5/40; H01S5/4025; H01S5/4031; H01S5/30; H01S5/34; H01S5/3413
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
In a buried planar passive waveguide structure formed in a plurality of semiconductor heterostructure layers, one of said layers within said structure having a lower energy bandgap than layers immediately adjacent thereto, said structure comprising a transparent single mode waveguide in said one layer formed by impurity induced disordering in combination with said immediately adjacent layers creating a longitudinal waveguide along at least a portion of said one layer having the highest refractive index at its core with diminishing refractive index from its core into adjacent layers.
Claim 2
Dependent Claim
87 words
In a buried planar passive waveguide structure formed in a plurality of semiconductor heterostructure layers, one of said layers within said structure having a lower energy bandgap than layers immediately adjacent thereto, said structure comprising a transparent single mode waveguide in said one layer formed by impurity induced disordering in combination with said immediately adjacent layers creating a longitudinal waveguide along at least a portion of said one layer having the highest refractive index at its core with diminishing refractive index from its core into adjacent layers.
Claim 3
Dependent Claim
61 words
The buried planar passive waveguide structure of claim 1 monolithically including an active medium having an active region with a plurality of optical cavities co-axially aligned and integrated with one end of said waveguide, said waveguide core having a energy bandgap level higher than that of said active region with low optical absorption at the gain wavelength of said active region.
Claim 4
Dependent Claim
123 words
In a semiconductor laser structure comprising a plurality of semiconductor layers, an active region formed between adjacent of said semiconductor layers and having an energy bandgap lower than said adjacent layers, mirror facets at each end of said structure to provide for optical feedback and further comprising means to disorder a portion of said structure active region lying adjacent to the mirror facets to induce at least initial interdiffusion of elemental constituents comprising said active region and said adjacent layers in said portion to form a passive waveguide therein having a one dimensional waveguide core region with an energy bandgap level higher than said active region lower energy bandgap and being substantially nonabsorbing to radiation at the operating wavelength of said active region.
Claim 5
Dependent Claim
123 words
In a semiconductor laser structure comprising a plurality of semiconductor layers, an active region formed between adjacent of said semiconductor layers and having an energy bandgap lower than said adjacent layers, mirror facets at each end of said structure to provide for optical feedback and further comprising means to disorder a portion of said structure active region lying adjacent to the mirror facets to induce at least initial interdiffusion of elemental constituents comprising said active region and said adjacent layers in said portion to form a passive waveguide therein having a one dimensional waveguide core region with an energy bandgap level higher than said active region lower energy bandgap and being substantially nonabsorbing to radiation at the operating wavelength of said active region.
Claim 6
Dependent Claim
204 words
In a semiconductor laser structure having a plurality of semiconductor layers including an active region therein having an energy bandgap lower than layers adjacent thereto with a passive waveguide section formed adjacent mirror facets at opposite ends of said structure and integral and in co-axial subsurface alignment with the active region of an adjacent active medium section comprising the steps of masking said active medium section leaving unmasked portions adjacent said mirror facets, disordering with a disordering element into said unmasked portions of the surface of said structure causing the interdiffusion of elemental constituents comprising said active region and said adjacent layers to effectively change said lower energy bandgap to a higher bandgap level, timing the disordering of said structure so that at least initial interdiffusion of elemental constituents comprising said active region and said adjacent layers in said passive waveguide section occurs while a portion of the active region in said active medium section remains undisordered due to said masking forming a one dimensional waveguide core region comprising said passive waveguide section in coaxial subsurface alignment with said undisordered active region in said active medium section such that said core region is nonabsorbing to radiation at the operating wavelength of said active medium.
Claim 7
Dependent Claim
204 words
In a semiconductor laser structure having a plurality of semiconductor layers including an active region therein having an energy bandgap lower than layers adjacent thereto with a passive waveguide section formed adjacent mirror facets at opposite ends of said structure and integral and in co-axial subsurface alignment with the active region of an adjacent active medium section comprising the steps of masking said active medium section leaving unmasked portions adjacent said mirror facets, disordering with a disordering element into said unmasked portions of the surface of said structure causing the interdiffusion of elemental constituents comprising said active region and said adjacent layers to effectively change said lower energy bandgap to a higher bandgap level, timing the disordering of said structure so that at least initial interdiffusion of elemental constituents comprising said active region and said adjacent layers in said passive waveguide section occurs while a portion of the active region in said active medium section remains undisordered due to said masking forming a one dimensional waveguide core region comprising said passive waveguide section in coaxial subsurface alignment with said undisordered active region in said active medium section such that said core region is nonabsorbing to radiation at the operating wavelength of said active medium.
Claim 8
Dependent Claim
17 words
In the semiconductor laser structure of claim 4 wherein said active medium section contains a single emitter.
Claim 9
Dependent Claim
16 words
In the semiconductor laser structure of claim 4 wherein said active medium section contains multiple emitters.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1992-10-16 | 1993-04-17 | 1993-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-16 | 1997-04-17 | 1997-10-17 | $3760.00 | Window Closed / Lapsed |
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