Patent US4066631A successfully refreshed from Google Patents.
Patent US4875084A successfully refreshed from Google Patents.
US4875084A
Expired / Lapsed
US
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Optoelectric transducer
Assignee: NEC Corp
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Filing: 1988-03-28
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Granted: 1989-10-17
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Expires: 2008-03-28
Abstract
Abstract For precise selection of a cut-off wavelength of an incident light, there is disclosed an optoelectric transducer operative to produce an electric charges on the basis of an incident light, comprising, (a) a carrier injected region with a first conductivity type formed of a non-degenerative semiconductor material and having a surface capable of being illuminated by the incident light, (b) a potential-barrier region, a first homojunction being formed between the carrier injected region and the potential-barrier region, and (c) a photoelectric converting region with the first conductivity type formed of a degenerative semiconductor material, a second homojunction being formed between the potential-barrier region and the photoelectric converting region, wherein a potential barrier is formed at the second homojunction between the potential-barrier region and the photoelectric converting region, so that it is possible to form the potential-barrier with a arbitrary height by selecting the two semiconductor materials for the potential-barrier region and the photoelectric converting region.
Inventors
- 👤 Shigeru Tohyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:04
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F39/199; H10F39/80; H10F39/803; H10F39/8033; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
262 words
An optoelectric transducer operative to produce electric charges in the presence of incident light, comprising: (a) a carrier injected region with a first conductivity type formed of a nondegeneratively doped semiconductor material; (b) a potential-barrier region contiguous to said carrier injected region for producing a first homojunction and formed of a material selected from the group consisting of as first semiconductor material of said first conductivity type lower in impurity atom concentration than said carrier injected region, an intrinsic semiconductor material and a second semiconductor material of a second conductivity type opposite to said first conductivity type; (c) a photoelectric converting region with said first conductivity type formed of a degeneratively doped semiconductor material and operative to produce hot majority carriers and hot minority carriers upon an illumination of said incident light, said hot majority carriers being injected into said carrier injected region, a second homojunction being formed between said potential-barrier region and said photoelectric converting region, said second semiconductor material having a thickness and an impurity atom concentration selected in such a manner as to be perfectly depleted due to depletion layers extending from said first and second homojunctions in at least an electric charge producing operation; and (d) short-circuit means electrically interconnecting said photoelectric converting region and said potential-barrier region, in which a cut-off wavelength of said incident light is decided by a barrier height at said second homojunction, wherein said short-circuit means provides a potential barrier lower than that between said potential-barrier region and said photoelectric converting region with respect to minority carriers produced in the photoelectric converting region.
Claim 2
Dependent Claim
262 words
An optoelectric transducer operative to produce electric charges in the presence of incident light, comprising: (a) a carrier injected region with a first conductivity type formed of a nondegeneratively doped semiconductor material; (b) a potential-barrier region contiguous to said carrier injected region for producing a first homojunction and formed of a material selected from the group consisting of as first semiconductor material of said first conductivity type lower in impurity atom concentration than said carrier injected region, an intrinsic semiconductor material and a second semiconductor material of a second conductivity type opposite to said first conductivity type; (c) a photoelectric converting region with said first conductivity type formed of a degeneratively doped semiconductor material and operative to produce hot majority carriers and hot minority carriers upon an illumination of said incident light, said hot majority carriers being injected into said carrier injected region, a second homojunction being formed between said potential-barrier region and said photoelectric converting region, said second semiconductor material having a thickness and an impurity atom concentration selected in such a manner as to be perfectly depleted due to depletion layers extending from said first and second homojunctions in at least an electric charge producing operation; and (d) short-circuit means electrically interconnecting said photoelectric converting region and said potential-barrier region, in which a cut-off wavelength of said incident light is decided by a barrier height at said second homojunction, wherein said short-circuit means provides a potential barrier lower than that between said potential-barrier region and said photoelectric converting region with respect to minority carriers produced in the photoelectric converting region.
Claim 3
Dependent Claim
40 words
An optoelectric transducer as set forth in claim 1, in which said carrier injected region is formed of a p-type silicon material doped with p-type impurity atoms to have an impurity atom concentration of about 1×10 15 cm -3 .
Claim 4
Dependent Claim
77 words
An optoelectric transducer as set forth in claim 2, in which said potential-barrier region is formed of an n-type silicon material doped with n-type impurity atoms to have a peak impurity atom concentration ranging between 3×10 16 cm -3 and 5×10 16 cm -3 , said n-type impurity atoms being distributed to have a profile tracing a half of a Gaussian distribution curve, wherein said potential-barrier region has a thickness ranging between 200 nano-meters and 300 nano-meters.
Claim 5
Dependent Claim
48 words
An optoelectric transducer as set forth in claim 3, in which said photoelectric converting region is formed of a p-type semiconductor material doped with p-type impurity atoms distributed to have a stepped profile with impurity atom concentrations from about 10 18 cm -3 to the uppermost solid solubility.
Claim 6
Dependent Claim
61 words
An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer further comprises an insulating layer formed on said photoelectric converting region and a mirror formed on said insulating layer, wherein said carrier injected region, said potential-barrier region, said photoelectric converting region, said insulating layer and said mirror forming in combination an optical cavity for an optical resonance.
Claim 7
Dependent Claim
26 words
An optoelectric transducer as set forth in claim 5, in which said insulating layer is formed of silicon oxide having a thickness of about 1 micron.
Claim 8
Dependent Claim
51 words
An optoelectric transducer as set forth in claim 6, in which said photoelectric converting region has a p-type impurity atom concentration of about 10 20 cm -3 and a thickness ranging between 400 nano-meters and 500 nano-meters, wherein said insulating layer has a thickness ranging between 1.5 micron and 2.0 microns.
Claim 9
Dependent Claim
17 words
An optoelectric transducer as set forth in claim 5, in which said mirror is formed of aluminum.
Claim 10
Dependent Claim
28 words
An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer further comprises an anti-reflection film formed on the surface of said carrier injected region.
Claim 11
Dependent Claim
38 words
An optoelectric transducer as set forth in claim 1, in which said potential barrier-region and said photoelectric conversion region are surrounded by a guard ring region of said second conductivity type forming a part of said short-circuit means.
Claim 12
Dependent Claim
34 words
An optoelectric transducer as set forth in claim 10, in which said guard ring region has a heavily doped portion larger in impurity atom concentration than the other portion of the guard ring region.
Claim 13
Dependent Claim
40 words
An optoelectric transducer as set forth in claim 11, in which said heavily doped portion is contacted to a metal wiring layer operative to extract said electric charges, wherein said carrier injected region is coupled to a constant voltage source.
Claim 14
Dependent Claim
28 words
An optoelectric transducer as set forth in claim 1, in which a short circuit is provided for electrical coupling between said photoelectric converting region and said potential-barrier region.
Claim 15
Dependent Claim
42 words
An optoelectric transducer as set forth in claim 1, in which a multiple film structure having an upper potential-barrier region and an upper carrier injected region of said first conductivity type is provided between said photoelectric converting region and said insulating film.
Claim 16
Dependent Claim
23 words
An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer services as a pixel incorporated in an image sensor.
Claim 17
Dependent Claim
22 words
An optoelectric transducer as set forth in claim 1, in which said carrier injected region is formed of an n-type silicon material.
Claim 18
Dependent Claim
24 words
An optoelectric transducer as set forth in claim 16, in which said photoelectric converting region is formed of an n-type degeneratively doped silicon material.
Claim 19
Dependent Claim
105 words
An optoelectric transducer as set forth in claim 17, in which said optoelectric transducer further comprises an insulating layer of silicon dioxide formed on said photoelectric converting region and a mirror formed on said insulating layer and in which said carrier injected region, said potential-barrier region, said photoelectric converting region, said insulating layer and said mirror forming in combination an optical cavity for an optical resonance, wherein said photoelectric converting region is doped with n-type impurity atoms of about 10 20 cm -3 and has a thickness ranging between 400 nano-meters and 500 nanometers and said insulating layer has a thickness of about 1 micron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-10-16 | 1993-04-17 | 1993-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-16 | 1997-04-17 | 1997-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-16 | 2001-04-17 | 2001-10-17 | $7700.00 | Window Closed / Lapsed |