US4873665A
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Dual storage cell memory including data transfer circuits
Assignee: Dallas Semiconductor Corp
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Filing: 1988-06-07
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Granted: 1989-10-10
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Expires: 2008-06-07
Abstract
Abstract A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.
Inventors
- 👤 Ching-Lin Jiang
- 👤 Clark R. Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:26
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G06; G06F; G06F5/00; G06F5/06; G06F5/065; G11C19/00; G11C19/28; G11C19/287; G11C8/00; G11C8/16
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
289 words
A memory array comprising: a plurality of storage cells arranged in rows and columns, each of said storage cells comprising a first memory cell and a second memory cell; each first memory cell having first and second data nodes with cross-coupled inverters connected therebetween, and having a first enable line input, each first memory cell being coupled to a first complementary pair of bit lines; each second memory cell having first and second data nodes with cross-coupled inverters connected therebetween and having a second enable line input, each second memory cell being coupled to a second complementary pair of bit lines; wherein, for each of said storage cells, said first data node of said second memory cell is coupled to ground through a series connection of a first switching means and a second switching means, said second switching means being responsive to a signal on said first data node of said first memory cell of the storage cell; all of the first enable line inputs of storage cells in the same row of storage cells being coupled together to a common first enable line for each row of said memory array; all of the second enable line inputs of storage cells in the same row of storage cells being coupled together to a common second enable line for each row of said memory array; all of the first memory cells of storage cells in the same column being coupled together to a common first complementary pair of bit lines for each column of said memory array; and all of the second memory cells of storage cells in the same column being coupled together to a common second complementary pair of bit lines for each column of said memory array.
Claim 2
Dependent Claim
289 words
A memory array comprising: a plurality of storage cells arranged in rows and columns, each of said storage cells comprising a first memory cell and a second memory cell; each first memory cell having first and second data nodes with cross-coupled inverters connected therebetween, and having a first enable line input, each first memory cell being coupled to a first complementary pair of bit lines; each second memory cell having first and second data nodes with cross-coupled inverters connected therebetween and having a second enable line input, each second memory cell being coupled to a second complementary pair of bit lines; wherein, for each of said storage cells, said first data node of said second memory cell is coupled to ground through a series connection of a first switching means and a second switching means, said second switching means being responsive to a signal on said first data node of said first memory cell of the storage cell; all of the first enable line inputs of storage cells in the same row of storage cells being coupled together to a common first enable line for each row of said memory array; all of the second enable line inputs of storage cells in the same row of storage cells being coupled together to a common second enable line for each row of said memory array; all of the first memory cells of storage cells in the same column being coupled together to a common first complementary pair of bit lines for each column of said memory array; and all of the second memory cells of storage cells in the same column being coupled together to a common second complementary pair of bit lines for each column of said memory array.
Claim 3
Dependent Claim
16 words
The memory array of claim 1, wherein each memory cell is a six-transistor static memory cell.
Claim 4
Dependent Claim
16 words
The memory array of claim 1, wherein each memory cell is a CMOS static memory cell.
Claim 5
Dependent Claim
194 words
Apparatus for storing data comprising: first and second memory cells, each memory cell having first and second complementary data nodes; first transfer means, coupled to said first and second data nodes of said first memory cell for transferring data into and out of said first memory cell independent of data stored in said second memory cell; second transfer means, coupled to said first and second data nodes of said second memory cell, for transfer data into and out of said second memory cell independent of data stored in said first memory cell; and third transfer means, separate from said first and second transfer means, and coupled to said first and second data nodes of said first and second memory cells, for transferring data between said first and second memory cells; wherein said third transfer means comprises first and second switching means for coupling said first data node of said first memory cell to ground potential when an input terminal coupled to said first switching means and said first data node of said second memory cell, which is coupled to a control input of said second switching means, are both at a first logic state.
Claim 6
Dependent Claim
194 words
Apparatus for storing data comprising: first and second memory cells, each memory cell having first and second complementary data nodes; first transfer means, coupled to said first and second data nodes of said first memory cell for transferring data into and out of said first memory cell independent of data stored in said second memory cell; second transfer means, coupled to said first and second data nodes of said second memory cell, for transfer data into and out of said second memory cell independent of data stored in said first memory cell; and third transfer means, separate from said first and second transfer means, and coupled to said first and second data nodes of said first and second memory cells, for transferring data between said first and second memory cells; wherein said third transfer means comprises first and second switching means for coupling said first data node of said first memory cell to ground potential when an input terminal coupled to said first switching means and said first data node of said second memory cell, which is coupled to a control input of said second switching means, are both at a first logic state.
Claim 7
Dependent Claim
15 words
The apparatus of claim 4, wherein each memory cell is a six-transistor static memory cell.
Claim 8
Dependent Claim
15 words
The apparatus of claim 4, wherein each memory cell is a CMOS static memory cell.
Claim 9
Dependent Claim
85 words
A static storage cell, comprising: first and second six-transistor static memory cells, each having first and second complementary data nodes; said first data node of said first memory cell being coupled to ground through a series combination of a first switching means and a second switching means, said first switching means being responsive to a signal on a control input terminal of said memory array, and said second switching means being responsive to a signal on said first data node of said second memory cell.
Claim 10
Dependent Claim
85 words
A static storage cell, comprising: first and second six-transistor static memory cells, each having first and second complementary data nodes; said first data node of said first memory cell being coupled to ground through a series combination of a first switching means and a second switching means, said first switching means being responsive to a signal on a control input terminal of said memory array, and said second switching means being responsive to a signal on said first data node of said second memory cell.
Claim 11
Dependent Claim
20 words
The storage cell of claim 7, wherein said first and second switching means each consist primarily of a field-effect transistor.
Claim 12
Dependent Claim
16 words
The storage cell of claim 7, wherein eaCh memory cell is a CMOS static memory cell.
Claim 13
Dependent Claim
212 words
An integrated circuit storage cell, comprising: first and second memory cell parts, each comprising: a CMOS latch connected to a pair of data nodes; and pass transistors connected to selectively access said pair of data nodes; and data transfer circuitry, comprising a first NMOS transistor connected to drive a first one of said pair of nodes of said first latch toward ground, if a first one of said nodes of said second latch is high AND a first control signal is high; a second NMOS transistor connected to drive a second one of said pair of nodes of said first latch toward ground, if a second one of said pair of nodes of said second latch is high AND said first control signal is high; a third NMOS transistor connected to drive said first one of said pair of nodes of said second latch toward ground, if said first one of said pair of nodes of said first latch is high AND a second control signal is high; and a fourth NMOS transistor connected to drive said second one of said pair of nodes of said second latch toward ground, if said second one of said pair of nodes of said first latch is high AND said second control signal is high.
Claim 14
Dependent Claim
212 words
An integrated circuit storage cell, comprising: first and second memory cell parts, each comprising: a CMOS latch connected to a pair of data nodes; and pass transistors connected to selectively access said pair of data nodes; and data transfer circuitry, comprising a first NMOS transistor connected to drive a first one of said pair of nodes of said first latch toward ground, if a first one of said nodes of said second latch is high AND a first control signal is high; a second NMOS transistor connected to drive a second one of said pair of nodes of said first latch toward ground, if a second one of said pair of nodes of said second latch is high AND said first control signal is high; a third NMOS transistor connected to drive said first one of said pair of nodes of said second latch toward ground, if said first one of said pair of nodes of said first latch is high AND a second control signal is high; and a fourth NMOS transistor connected to drive said second one of said pair of nodes of said second latch toward ground, if said second one of said pair of nodes of said first latch is high AND said second control signal is high.
Claim 15
Dependent Claim
16 words
The storage cell of claim 10, wherein each memory cell is a six-transistor static memory cell.
Claim 16
Dependent Claim
16 words
The storage cell of claim 10, wherein each memory cell is a CMOS static memory cell.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-10-09 | 1993-04-10 | 1993-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-09 | 1997-04-10 | 1997-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-09 | 2001-04-10 | 2001-10-10 | $7700.00 | Window Closed / Lapsed |