Patent US4873565A successfully refreshed from Google Patents.
US4873565A
Expired / Lapsed
US
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Method and apparatus for providing interconnection between metallization layers on semiconductor devices
Assignee: Texas Instruments Inc
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Filing: 1987-11-02
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Granted: 1989-10-10
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Expires: 2007-11-02
Abstract
Abstract A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18 ) is then applied and a cavity (22) is formed within the photoresist (18 ). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).
Inventors
- 👤 Bobby A. Roane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/064; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
55 words
A semiconductor device interconnection between first and second metallization levels separated by an insulator, comprising: a solid stud with vertical sidewalls extending from the first level of metallization through the insulator into contact with the second level of metallization; said stud clad with a corrosion-preventing material on said vertical sidewalls and a top surface thereof.
Claim 2
Dependent Claim
55 words
A semiconductor device interconnection between first and second metallization levels separated by an insulator, comprising: a solid stud with vertical sidewalls extending from the first level of metallization through the insulator into contact with the second level of metallization; said stud clad with a corrosion-preventing material on said vertical sidewalls and a top surface thereof.
Claim 3
Dependent Claim
17 words
The interconnection of claim 1, wherein said metallization layers are formed on a silicon semiconductor slice substrate.
Claim 4
Dependent Claim
28 words
The interconnection of claim 1, wherein said stud is separated from the first level by a diffusion barrier comprising a refractory metal covered with a platable metal cap.
Claim 5
Dependent Claim
12 words
The interconnection of claim 1, wherein said stud comprises a plated conductor.
Claim 6
Dependent Claim
12 words
The interconnection of claim 1, wherein said corrosion preventing material comprises tungsten.
Claim 7
Dependent Claim
12 words
The interconnection of claim 1, wherein said corrosion preventing material comprises molybdenum.
Claim 8
Independent Claim
109 words
An apparatus for interconnecting spaced apart metallization levels on a semiconductor substrate, comprising: an oxide field formed on the semiconductor substrate; a first level of metallization forming a predesignated lead over said oxide field; a diffusion barrier formed over said lead; a conductor having vertical sidewalls extending from said diffusion barrier; a corrosion-resistant layer over said predesignated lead, said vertical sidewalls and a top surface of said conductor; an insulator over said first level and said conductor so that said conductor protrudes through said insulator; and a second metallization level over said insulator so that said conductor interconnects the first level of metallization with said second level of metallization.
Claim 9
Independent Claim
109 words
An apparatus for interconnecting spaced apart metallization levels on a semiconductor substrate, comprising: an oxide field formed on the semiconductor substrate; a first level of metallization forming a predesignated lead over said oxide field; a diffusion barrier formed over said lead; a conductor having vertical sidewalls extending from said diffusion barrier; a corrosion-resistant layer over said predesignated lead, said vertical sidewalls and a top surface of said conductor; an insulator over said first level and said conductor so that said conductor protrudes through said insulator; and a second metallization level over said insulator so that said conductor interconnects the first level of metallization with said second level of metallization.
Claim 10
Dependent Claim
15 words
The apparatus for interconnecting metallization levels of claim 7, wherein said predesignated lead comprises aluminum.
Claim 11
Dependent Claim
17 words
The apparatus for interconnecting metallization levels of claim 7, wherein said predesignated lead comprises an aluminum-copper alloy.
Claim 12
Dependent Claim
18 words
The apparatus for interconnecting metallization levels of claim 8, wherein said predesignated lead comprises a sputtered on metal.
Claim 13
Dependent Claim
18 words
The apparatus for connecting metallization levels of claim 8, wherein said predesignated lead comprises an evaporated on metal.
Claim 14
Dependent Claim
25 words
The apparatus for interconnecting metallization levels of claim 8, wherein said diffusion barrier comprises a sputtered on platable metal cap over a sputtered-on refractory metal.
Claim 15
Dependent Claim
23 words
The apparatus for interconnecting metallization levels of claim 7, wherein said conductor comprises a plated metal stud formed in a patterned photoresist cavity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-09 | 1993-04-10 | 1993-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-09 | 1997-04-10 | 1997-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-09 | 2001-04-10 | 2001-10-10 | $7700.00 | Window Closed / Lapsed |