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US4873118A Expired / Lapsed US ⏱️ 0.0 years remaining

Oxygen glow treating of ZnO electrode for thin film silicon solar cell

Assignee: Atlantic Richfield Co
•
Filing: 1988-11-18
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Granted: 1989-10-10
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Expires: 2008-11-18
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Abstract

Abstract An improved method for making solar cells of the type wherein a thin film silicon hydrogen alloy structure is deposited upon a transparent zinc oxide conductive film. Before deposition of the TFS film, the zinc oxide film is treated with a glow discharge comprising oxygen.

Inventors

  • 👤 Eric Elias
  • 👤 Karl E. Knapp

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 18:39
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/138; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/30; C23C16/40; C23C16/407; C23C16/56; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 66 words
In a process for production of a photoconductive device wherein a first conductive layer comprising ZnO is applied to a substrate, and a thin film silicon hydrogen alloy is applied to said first conductive layer, the improvement comprising: after applying said first conductive layer comprising ZnO to said substrate, treating said first conductive layer with a glow discharge in a gas containing a source of oxygen.
Claim 2
Dependent Claim 66 words
In a process for production of a photoconductive device wherein a first conductive layer comprising ZnO is applied to a substrate, and a thin film silicon hydrogen alloy is applied to said first conductive layer, the improvement comprising: after applying said first conductive layer comprising ZnO to said substrate, treating said first conductive layer with a glow discharge in a gas containing a source of oxygen.
Claim 3
Dependent Claim 41 words
The improved process of claim further including, after treating of said first conductive layer with a glow discharge in a gas containing source of oxygen, and without breaking vacuum, applying said thin film silicon hydrogen alloy by glow discharge in silane.
Claim 4
Dependent Claim 11 words
The improved process of claim 1 wherein said gas comprises oxygen.
Claim 5
Dependent Claim 18 words
The improved process of claim 1 wherein said gas comprises a mixture of oxygen and an inert gas.
Claim 6
Dependent Claim 19 words
The improved process of claim 4 wherein said inert gas includes one or more of argon, helium or nitrogen.
Claim 7
Dependent Claim 11 words
The improved process of claim 1 wherein said gas comprises air.
Claim 8
Dependent Claim 85 words
A process for making a photovoltaic device comprising: depositing a film of zinc oxide onto a substrate to form a first current collecting contact, treating said zinc oxide film with a glow discharge in a gas containing a source of oxygen, depositing on said zinc oxide film at least one film of silicon containing one or more of hydrogen and a conductivity modifying dopant, to form a photovoltaic structure, and depositing on said photovoltaic structure a conductive film to form a second current collecting contact.
Claim 9
Dependent Claim 85 words
A process for making a photovoltaic device comprising: depositing a film of zinc oxide onto a substrate to form a first current collecting contact, treating said zinc oxide film with a glow discharge in a gas containing a source of oxygen, depositing on said zinc oxide film at least one film of silicon containing one or more of hydrogen and a conductivity modifying dopant, to form a photovoltaic structure, and depositing on said photovoltaic structure a conductive film to form a second current collecting contact.
Claim 10
Dependent Claim 10 words
The process of claim 7 wherein said gas comprises oxygen.
Claim 11
Dependent Claim 17 words
The process of claim 7 wherein said gas comprises a mixture of oxygen and an inert gas.
Claim 12
Dependent Claim 18 words
The process of claim 9 wherein said insert gas includes one or more of argon, helium or nitrogen.
Claim 13
Dependent Claim 28 words
The process of claim 7 wherein said zinc oxide film is deposited by chemical vapor deposition from diethyl zinc, diborane and water vapor in an inert carrier gas.
Claim 14
Dependent Claim 17 words
The process of claim 7 wherein said second current collecting film comprises a conductive zinc oxide film.
Claim 15
Dependent Claim 10 words
The process of claim 7 wherein said gas comprises air.

References Cited (Backward Citations)

US2841477A Cited
US4634600A Cited
US4792670A Cited
US4678539A Cited
US4715941A Cited
US4790883A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-10-09 1993-04-10 1993-10-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-10-09 1997-04-10 1997-10-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-10-09 2001-04-10 2001-10-10 $7700.00 Window Closed / Lapsed

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