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US4872044A
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Static induction type thyristor
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1987-05-06
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Granted: 1989-10-03
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Expires: 2007-05-06
Abstract
Abstract In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer region contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Tadahiro Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:27
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/211; H10D12/212; H10D18/00; H10D18/60; H10D18/65; H10D18/655; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/13; H10D62/141; H10D62/142; H10D62/17; H10D62/343; H10D64/00; H10D64/20; H10D64/27; H10D64/311
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
259 words
A static induction type thyristor comprising: an i layer having a substantially uniform low impurity concentration and having opposed major surfaces; a first main electrode means having a first highly-doped semiconductor region, said part main electrode means being formed adjacent to one of said major surfaces of said i layer; a thin layer region having an impurity concentration higher than that of said i layer and a thickness much smaller than that of said i layer, said thin layer region being formed on the major surface of said high-resistivity semiconductor region; a substantially flat second main electrode means comprising a second highly-doped semiconductor region, said second highly-doped semiconductor region being formed on that side of said thin layer region located opposite to the side adjacent to said i layer the impurity concentration of said second highly-doped semiconductor region being much higher than that of said thin layer region, and said second main electrode means further comprising a conductive electrode formed on said second highly-doped semiconductor region and generally coextensive therewith; a highly-doped gate region in the vicinity of said first highly-doped semiconductor region, at least one current channel for those carriers supplied from said first highly-doped semiconductor region and said second highly-doped semiconductor region being formed of a portion of said i layer and substantially surrounded by said gate region; and a third semiconductor region having an impurity concentration lower than that of said gate region and formed so as to cover that bottom surface of said gate region which faces at least the other of said major surfaces.
Claim 2
Dependent Claim
259 words
A static induction type thyristor comprising: an i layer having a substantially uniform low impurity concentration and having opposed major surfaces; a first main electrode means having a first highly-doped semiconductor region, said part main electrode means being formed adjacent to one of said major surfaces of said i layer; a thin layer region having an impurity concentration higher than that of said i layer and a thickness much smaller than that of said i layer, said thin layer region being formed on the major surface of said high-resistivity semiconductor region; a substantially flat second main electrode means comprising a second highly-doped semiconductor region, said second highly-doped semiconductor region being formed on that side of said thin layer region located opposite to the side adjacent to said i layer the impurity concentration of said second highly-doped semiconductor region being much higher than that of said thin layer region, and said second main electrode means further comprising a conductive electrode formed on said second highly-doped semiconductor region and generally coextensive therewith; a highly-doped gate region in the vicinity of said first highly-doped semiconductor region, at least one current channel for those carriers supplied from said first highly-doped semiconductor region and said second highly-doped semiconductor region being formed of a portion of said i layer and substantially surrounded by said gate region; and a third semiconductor region having an impurity concentration lower than that of said gate region and formed so as to cover that bottom surface of said gate region which faces at least the other of said major surfaces.
Claim 3
Dependent Claim
32 words
A static induction type thyristor according to claim 1, in which: said thin layer region has an impurity concentration at least one order to magnitude higher than that of said i layer
Claim 4
Dependent Claim
32 words
A static induction type thyristor according to claim 1, in which: said thin layer region has an impurity concentration at least two orders of magnitude higher than that of said i layer.
Claim 5
Dependent Claim
34 words
A static induction type thyristor according to claim 1, in which: said impurity concentration of said thin layer region being at least one order to magnitude lower than that of said first semiconductor region.
Claim 6
Dependent Claim
34 words
A static induction type thyristor according to claim 1, in which: said impurity concentration of said thin layer region being at least two orders of magnitude lower than that of said first semiconductor region.
Claim 7
Dependent Claim
26 words
A static induction type thyristor according to claim 1, in which: said thin layer region has a thickness much smaller than that of said i layer.
Claim 8
Dependent Claim
28 words
A static induction type thyristor according to claim 1, in which: said i layer contains a certain concentration of a substance having a killer effect for charge carriers.
Claim 9
Dependent Claim
30 words
A static induction type thyristor according to claim 1, in which: said first main electrode means includes two or more electrodes coupled together by a conductive electrode common to them.
References Cited (Backward Citations)
US4223328A
Cited
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