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US4868615A
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Semiconductor light emitting device using group I and group VII dopants
Assignee: Toshiba Corp
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Filing: 1987-09-16
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Granted: 1989-09-19
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Expires: 2007-09-16
Abstract
Abstract A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnSxSe1-x crystal layer (0</=x</=1) formed on the substrate and containing a Group VII element as a donor impurity, and a p type ZnSySe1-y crystal layer (0</=y</=1) formed on the n type crystal layer and containing a Group I element as an acceptor impurity, where a pn junction is formed between the n type crystal layer and the p type crystal layer.
Inventors
- 👤 Atsushi Kamata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/8232; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
89 words
A semiconductor light emitting device comprising an n-type GaAs semiconductor substrate, an n type ZnS x Se 1-x crystal layer (0<x<1) grown on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS y Se 1-y (0<y<1) crystal layer grown on the n type crystal layer and containing a Group I element as an acceptor impurity, wherein a pn junction is formed between the n type ZnSe x Se 1-x crystal layer and the p type ZnS y Se 1-y crystal layer.
Claim 2
Dependent Claim
89 words
A semiconductor light emitting device comprising an n-type GaAs semiconductor substrate, an n type ZnS x Se 1-x crystal layer (0<x<1) grown on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS y Se 1-y (0<y<1) crystal layer grown on the n type crystal layer and containing a Group I element as an acceptor impurity, wherein a pn junction is formed between the n type ZnSe x Se 1-x crystal layer and the p type ZnS y Se 1-y crystal layer.
Claim 3
Dependent Claim
26 words
A semiconductor light emitting device according to claim 1, wherein said Group VII element is one selected from the group consisting of chlorine, bromine, and iodine.
Claim 4
Dependent Claim
26 words
A semiconductor light emitting device according to claim 1, wherein said Group I element is one selected from the group consisting of sodium, lithium, and potassium.
Claim 5
Dependent Claim
23 words
A semiconductor light emitting device according to claim 1, wherein x in said n type ZnS x Se 1-x is 0 to 0.15.
Claim 6
Dependent Claim
23 words
A semiconductor light emitting device according to claim 1, wherein y in said p type ZnS y Se 1-y is 0 to 0.25.
References Cited (Backward Citations)
US3578507A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |