Wide-waveguide interferometric array with interelement losses

Claim 2

A semiconductor laser array structure, comprising: means for producing lasing action in a semiconductor structure, including a substrate, an active semiconductor layer, cladding layers, electrodes for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; and an array of waveguides with parallel longitudinal axes, formed in the structure and including semiconductor structural means between the waveguides to provide interelement regions of increased loss between the waveguides, to favor higher-order array modes; and means for favoring operation in a selected array mode exclusively; and wherein the means to provide interelement losses includes a buffer layer having an intermediate index of refraction between the index of refraction of the cladding layers and the index of refraction of the substrate, to provide sufficient transverse antiguiding in the interelement regions to favor operation in a higher-order array mode.

Claim 3

A semiconductor laser array structure as defined in claim 1, wherein: the buffer layer is transparent to provide strong coupling between elements.

Claim 4

A semiconductor laser array structure as defined in claim 1, wherein: the means for favoring operation in a selected array mode includes an interferometric structure favoring operation at the lowest of the higher-order modes.

Claim 5

A semiconductor laser array structure as defined in claim 3 wherein the interferometric structure includes: a second set of waveguides with parallel longitudinal axes; and a wide-waveguide section, having one end coupled to the first set of waveguides and an opposite end coupled to coupled to the second set of waveguides, having a length sufficient to support a single lateral mode in the wide-waveguide section, and having a width approximately equal to the combined width of one of the two sets of waveguides.

Claim 6

A semiconductor layer array structure, comprising: a relatively wide waveguide section; a first set of waveguides with parallel longitudinal axes, coupled to one end of the wide-waveguide section, and having an active layer and cladding layers fabricated on a semiconductor substrate; a second set of waveguides with parallel longitudinal axes, coupled to the other end of the wide-wave-guide section, and having an active layer and cladding layers fabricated on a semiconductor substrate; as pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; and structural means located between the waveguide elements of both first and second sets of waveguides, providing significant interelement losses and therefore favoring operation at higher-order array modes; wherein the structural means providing inter-element losses includes a structural layer providing antiguiding in a transverse direction, perpendicular to the active layer, and only in the interelement regions of the structure, the structural layer having an intermediate index of refraction between the index of refraction of the cladding layers and the index of refraction of the substrate, to provide transverse antiguiding in the interelement regions; wherein the wide-waveguide region has a length sufficient to support a single lateral mode in the wide-waveguide section; and wherein the individual waveguides in one set are not colinar with waveguides in the other set, to favor selection of only the lowest of the higher-order array modes of operation.

Claim 7

A semiconductor layer array structure, comprising: a relatively wide waveguide section; a first set of waveguides with parallel longitudinal axes, coupled to one end of the wide-waveguide section, and having an active layer and cladding layers fabricated on a semiconductor substrate; a second set of waveguides with parallel longitudinal axes, coupled to the other end of the wide-wave-guide section, and having an active layer and cladding layers fabricated on a semiconductor substrate; as pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; and structural means located between the waveguide elements of both first and second sets of waveguides, providing significant interelement losses and therefore favoring operation at higher-order array modes; wherein the structural means providing inter-element losses includes a structural layer providing antiguiding in a transverse direction, perpendicular to the active layer, and only in the interelement regions of the structure, the structural layer having an intermediate index of refraction between the index of refraction of the cladding layers and the index of refraction of the substrate, to provide transverse antiguiding in the interelement regions; wherein the wide-waveguide region has a length sufficient to support a single lateral mode in the wide-waveguide section; and wherein the individual waveguides in one set are not colinar with waveguides in the other set, to favor selection of only the lowest of the higher-order array modes of operation.

Claim 8

A semiconductor laser array structure as defined in claim 5 wherein: the two sets of waveguides in each set have substantially equal individual widths and have substantially equal periodic waveguide spacings measured across the waveguides of a set.

Claim 9

A semiconductor laser array structure as defined in claim 5, wherein: the structural layer providing transverse antiguiding is transparent, to provide strong interelement coupling, and stability of operation.

Claim 10

A semiconductor laser array structure as defined in claim 5, and further comprising: selective phase-shifting means positioned at the emitting facet to correct the phase of selected elemental outputs.

Claim 11

A semiconductor laser array structure as defined in claim 5, wherein: the structure is formed by a liquid-phase epitaxy (LPE) process.

Claim 12

A semiconductor laser array structure as defined in claim 5, wherein: the structure is formed by a metal-organic chemical vapor deposition (MOCVD) process.