US4772082A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser array device
Assignee: Sharp Corp
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Filing: 1986-06-19
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Granted: 1988-09-20
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Expires: 2006-06-19
Abstract
Abstract A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflective index of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
Inventors
- 👤 Sadayoshi Matsui
- 👤 Mototaka Taneya
- 👤 Mitsuhiro Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:29
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
62 words
A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflectivity of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
Claim 2
Dependent Claim
62 words
A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflectivity of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
Claim 3
Dependent Claim
70 words
A semiconductor laser array device according to claim 1, wherein a limited thickness of each of the layers of a reflecting film on said facet which is composed of an Al 2 O 3 single layered film, an Al 2 O 3 multi-layered film, an Al 2 O 3 -amorphous Si film, or a combination thereof, creates a reflectivity of said facet in the range of approximately 2% to 95%.
Claim 4
Dependent Claim
80 words
A semiconductor laser array device according to claim 1, wherein the high reflectivity of said facet is attained by the formation of a reflecting film composed of Al 2 O 3 double-layers in the center area of said facet corresponding to the active waveguides and the low reflectivity of said facet is attained by the formation of a reflecting film composed of an Al 2 O 3 single-layer in the other area of said facet corresponding to the active waveguides.
Claim 5
Dependent Claim
51 words
A semiconductor laser array device according to claim 3, wherein the thickness of said Al 2 O 3 double-layered reflecting film and said Al 2 O 3 single-layered reflecting film are 2λ/4 and λ/4 (λ is the oscillation wavelength), respectively, resulting in the reflectivities of approximately 32% and approximately 2%, respectively.
Claim 6
Dependent Claim
80 words
A semiconductor laser array device according to claim 2, wherein the high reflectivity of said facet is attained by the formation of a reflecting film composed of Al 2 O 3 double-layers in the center area of said facet corresponding to the active waveguides and the low reflectivity of said facet is attained by the formation of a reflecting film composed of an Al 2 O 3 single-layer in the other area of said facet corresponding to the active waveguides.
Claim 7
Dependent Claim
51 words
A semiconductor laser array device according to claim 5, wherein the thickness of said Al 2 O 3 double-layered reflecting film and said Al 2 O 3 single-layered reflecting film are 2λ/4 and λ/4 (λ is the oscillation wavelength), respectively, resulting in the reflectivities of approximately 32% and approximately 2%, respectively.
References Cited (Backward Citations)
US3806830A
Cited
US3943462A
Cited
US4255717A
Cited
US4337443A
Cited
JPS55595A
Cited
US4536940A
Cited
US4603421A
Cited
US4594718A
Cited
US4641311A
Cited
US4624000A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |