Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
283 words
A charge transfer device for reading out a radiation detector, comprising means for eliminating the background level of the radiation to be detected, and comprising an input circuit and a transfer circuit, formed in a semiconductor substrate, said input circuit comprising: a charge injection source connected to said detector, which supplies a quantity of charge; a storage electrode for forming a storage potential well in the semiconductor substrate in which electric charge injected by the source can be stored; a control electrode between the source and the storage electrode, which permits injection of charge from the source into the storage potential well; a separation electrode, isolated from the storage electrode for subdividing said storage well into an evacuation well and an output well separated from each other by a separation potential formed by said separation electrode, which permits retention in the evacuation well of a quality of charge to be evacuated and retention in the output well a quantity representative of the useful signal which is read by the transfer circuit, while the charge in the evacuation well can be evacuated by means of a reset transistor; a floating electrode connected to the separation electrode for controlling the potential of the separation electrode, said potential of the separation electrode being determined during a calibration operation, said floating electrode being located besides the separation electrode, the doping under the floating electrode and the separation electrode being different from each other and such that potential wells under these electrodes have different depths; and and insulation electrode disposed between the separation electrode and the floating electrode, by means of which the well under the floating electrode and the output well can be separated from each other.
Claim 2
Dependent Claim
283 words
A charge transfer device for reading out a radiation detector, comprising means for eliminating the background level of the radiation to be detected, and comprising an input circuit and a transfer circuit, formed in a semiconductor substrate, said input circuit comprising: a charge injection source connected to said detector, which supplies a quantity of charge; a storage electrode for forming a storage potential well in the semiconductor substrate in which electric charge injected by the source can be stored; a control electrode between the source and the storage electrode, which permits injection of charge from the source into the storage potential well; a separation electrode, isolated from the storage electrode for subdividing said storage well into an evacuation well and an output well separated from each other by a separation potential formed by said separation electrode, which permits retention in the evacuation well of a quality of charge to be evacuated and retention in the output well a quantity representative of the useful signal which is read by the transfer circuit, while the charge in the evacuation well can be evacuated by means of a reset transistor; a floating electrode connected to the separation electrode for controlling the potential of the separation electrode, said potential of the separation electrode being determined during a calibration operation, said floating electrode being located besides the separation electrode, the doping under the floating electrode and the separation electrode being different from each other and such that potential wells under these electrodes have different depths; and and insulation electrode disposed between the separation electrode and the floating electrode, by means of which the well under the floating electrode and the output well can be separated from each other.
Claim 3
Dependent Claim
62 words
A charge transfer device as claimed in claim 1, characterized in that the semiconductor substrate is an N-channel semiconductor substrate and in that the potential well produced under the floating electrode is deeper than that produced under the separation electrode, this being obtained by overdoping by means of donor elements the part of the semiconductor substrate situated just under the floating electrode.
Claim 4
Dependent Claim
63 words
A charge transfer device as claimed in claim 1, characterized in that the semiconductor substrate is an N-channel semiconductor substrate and in that the potential well is produced under the floating electrode is deeper than that produced under the separation electrode, this being obtained by overdoping by means of acceptor elements the part of the semiconductor substrate situated just under the separation electrode.
Claim 5
Dependent Claim
78 words
A charge transfer device as claimed in claim 1, characterized in that the semiconductor substrate is an N-channel semiconductor substrate and in that the potential well produced under the floating electrode is deeper than that produced under the separation electrode, this being obtained by overdoping by means of donor elements the part of the semiconductor substrate situated just under the floating electrode, the insulation electrode and the storage electrode exclusive of the part situated under the separation electrode.
Claim 6
Dependent Claim
89 words
A charge transfer device as claimed in claim 1, characterized in that the semiconductor substrate is an N-channel semiconductor substrate and in that the potential well produced under the floating electrode is deeper than that produced under the separation electrode, this being obtained by overdoping by means of donor elements the part of the semiconductor substrate situated just under the floating electrode, the insulation electrode and the storage electrode, and by doping by means of acceptor elements the parts of the semiconductor substrate situated just below the separation electrode.
Claim 7
Dependent Claim
22 words
A charge transfer device as claimed in claim 1, characterized in that the output well is discharged by means of a transistor.
Claim 8
Dependent Claim
27 words
A charge transfer device as claimed in claim 1, characterized in that the output well is discharged into the transfer circuit by means of the transfer electrode.
Claim 9
Dependent Claim
31 words
A detection apparatus, characterized in that it comprises n charge transfer devices (CTD's) as claimed in claim 1, each injection source of each CTD being connected individually to a charge emitter.
Claim 10
Dependent Claim
36 words
A detection apparatus as claimed in claim 8, characterized in that the n charge transfer devices are repeated p times in order to permit bidimensional arrangement of picture points formed by the n x p devices.
Claim 11
Dependent Claim
22 words
A detection apparatus as claimed in claim 8, characterized in that the charge emitter is constituted by diode sensitive to infrared radiation.
Claim 12
Dependent Claim
25 words
A detection apparatus as claimed in claim 10, characterized in that the diode is a diode of Cd x Hg 1-x Te or of InSb.