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US4523326A Expired / Lapsed US ⏱️ 0.0 years remaining

Low noise charge coupled imager circuit

Assignee: Raytheon Co
•
Filing: 1983-01-17
•
Granted: 1985-06-11
•
Expires: 2003-01-17
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Abstract

Abstract Noise reduction and dynamic range expansion in a CCD imager is achieved by combining a narrow FAT zero metering gate with a reference column subtraction and CCD charge bailing.

Inventors

  • 👤 Mary J. Hewitt
  • 👤 Arthur L. Morse

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 07:34
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 235 words
A low noise charge transfer device imager formed on a semiconductive substrate, comprising: a plurality of semiconductive photodetectors organized by columns; a plurality of column charge transfer device registers disposed to receive charge from each corresponding column of photodetectors, said charge transfer device registers including pluralities of charge transfer device gates connected to receive clock signals; means for integrating charge from each photodetector during an integration period and therefater injecting the integrated charge into an adjacent portion of the corresponding one of said column charge transfer device registers as a charge packet; means for multiplexing the output signals from each of said charge transfer device registers; a reference column charge transfer device register; means for subtracting the output from each of said charge transfer device column registers from that of said reference column charge device registers; means for periodically bailing a certain amount of charge from said integrating means by a selected number of times during said integration; and a FAT zero charge injector including a FAT zero metering gate overlying said substrate at the input to each of said column charge transfer device registers including means for applying an electrical potential to said metering gate to form a surface potential well therebeneath in said substrate registered to said metering gate, the effective area of said metering gate being reduced to a small amount relative to the effective area of said charge transfer device gates.
Claim 2
Dependent Claim 235 words
A low noise charge transfer device imager formed on a semiconductive substrate, comprising: a plurality of semiconductive photodetectors organized by columns; a plurality of column charge transfer device registers disposed to receive charge from each corresponding column of photodetectors, said charge transfer device registers including pluralities of charge transfer device gates connected to receive clock signals; means for integrating charge from each photodetector during an integration period and therefater injecting the integrated charge into an adjacent portion of the corresponding one of said column charge transfer device registers as a charge packet; means for multiplexing the output signals from each of said charge transfer device registers; a reference column charge transfer device register; means for subtracting the output from each of said charge transfer device column registers from that of said reference column charge device registers; means for periodically bailing a certain amount of charge from said integrating means by a selected number of times during said integration; and a FAT zero charge injector including a FAT zero metering gate overlying said substrate at the input to each of said column charge transfer device registers including means for applying an electrical potential to said metering gate to form a surface potential well therebeneath in said substrate registered to said metering gate, the effective area of said metering gate being reduced to a small amount relative to the effective area of said charge transfer device gates.
Claim 3
Dependent Claim 42 words
The device of claim 1 wherein each of said registers is bounded by a channel stop defining the width of a charge flow channel beneath said gates through which charge flows in said substrate, said channel being constricted beneath said metering gate.
Claim 4
Dependent Claim 46 words
The device of claim 1 wherein the extent of said charge transfer gates in the direction of charge flow is on the order of 45 microns and the extent of said metering gate in the direction of charge flow is on the order of 6 microns.
Claim 5
Dependent Claim 18 words
The device of claim 1 wherein said reduced effective area is reduced by about a factor of ten.

References Cited (Backward Citations)

US3683193A Cited
US3925657A Cited
US3931463A Cited
US4010319A Cited
US4245164A Cited
US4145721A Cited
US4482909A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-06-10 1988-12-10 1989-06-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-06-10 1992-12-10 1993-06-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-06-10 1996-12-10 1997-06-11 $7700.00 Window Closed / Lapsed

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