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Electrode structure for a corner turn in a series-parallel-series charge coupled device

Assignee: Tektronix Inc
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Filing: 1988-06-30
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Granted: 1989-08-29
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Expires: 2008-06-30
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Abstract

Abstract A CCD is fabricated from an intermediate product comprising a body of semiconductor material having a channel region of a first conductivity type bounded by a substrate region of a second, opposite conductivity type and a surface of the body, and first and second gates overlying the surface and spaced from each other. The method comprises introducing a dopant into the channel region by way of the surface of the body. The first and second gates are opaque with respect to the dopant. The dopant is such that it forms a zone within the channel region, beneath the space between the first and second gates, and the zone is of the first conductivity type and is of a higher doping concentration than other portions of the channel region. A third gate is formed over the surface of the body of semiconductor material, the third gate being at least partially disposed across the space between the first and second gates.

Inventors

  • 👤 Raymond Hayes
  • 👤 Denis L. Heidtmann

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 12:28
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 227 words
A charge-coupled device having an electrode structure suitable for use as a corner turn in a series-parallel-series configuration comprising: a body of semiconductor material having a channel region of a first conductivity type bounded by a substrate region of a second, opposite conductivity type and a surface of the body, the body of semiconductor material having, within the channel region, a zone of said first conductivity type and of different doping concentration than other portions of the channel region, and an electrode structure that overlies said surface and is composed of at least first, second, and third gates, the first and second gates being spaced from each other, and said zone of said first conductivity type being beneath the space between the first and second gates, and the third gate extending at least partially across the space between the first and second gates wherein the first and second gates are each elongate, have an angled end portion, and have a length component parallel to a predetermined direction, the electrode structure further comprising a fourth gate that extends transverse to said predetermined direction and is spaced from the angled end portions of the first and second gates, the third gate and said zone of said first conductivity type having a generally triangular shape defined by the angled portions of the first and second gates, and the fourth gate.
Claim 2
Dependent Claim 227 words
A charge-coupled device having an electrode structure suitable for use as a corner turn in a series-parallel-series configuration comprising: a body of semiconductor material having a channel region of a first conductivity type bounded by a substrate region of a second, opposite conductivity type and a surface of the body, the body of semiconductor material having, within the channel region, a zone of said first conductivity type and of different doping concentration than other portions of the channel region, and an electrode structure that overlies said surface and is composed of at least first, second, and third gates, the first and second gates being spaced from each other, and said zone of said first conductivity type being beneath the space between the first and second gates, and the third gate extending at least partially across the space between the first and second gates wherein the first and second gates are each elongate, have an angled end portion, and have a length component parallel to a predetermined direction, the electrode structure further comprising a fourth gate that extends transverse to said predetermined direction and is spaced from the angled end portions of the first and second gates, the third gate and said zone of said first conductivity type having a generally triangular shape defined by the angled portions of the first and second gates, and the fourth gate.
Claim 3
Dependent Claim 29 words
A device according to claim 1, wherein the first and third gates are electrically connected together and the second gate is electrically isolated from the first and third gates.
Claim 4
Dependent Claim 16 words
A device according to claim 1, wherein the first and second gates comprise series register segments.
Claim 5
Dependent Claim 15 words
A device according to claim 1, wherein the fourth gate comprises a parallel register segment.

References Cited (Backward Citations)

US4012759A Cited
US3852799A Cited
US4103347A Cited
US4241422A Cited
US4777519A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-08-28 1993-02-27 1993-08-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-08-28 1997-02-27 1997-08-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-08-28 2001-02-27 2001-08-29 $7700.00 Window Closed / Lapsed

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