Series-parallel-series charge transfer memory having complete bias charge operation

Claim 2

In a series-parallel-series charge transfer memory of the type having a read-in chain of a plurality of first and second alternately arranged charge transfer elements, a plurality of parallel charge transfer devices coupled to receive information charges from the charge transfer elements of the read-in chain, and a read-out chain of a plurality of third and fourth alternately arranged charge transfer elements coupled to receive information charges from the parallel charge transfer devices, the improvement comprising: a first circuit arrangement assigned to the read-in chain and operable to store bias charges and deliver the bias charges to the read-in chain after information charge transfer to the parallel charge transfer devices; and a second circuit arrangement assigned to the read-out chain and operable to remove bias charges from the read-out chain prior to receipt of information charges from the parallel charge transfer devices.

Claim 3

The improved memory of chain 1, wherein the read-in and read-out chains are constructed in double silicon technology having implanted shift areas and operating in two-phase operation, said charge transfer elements of said read-in and read-out chains constructed to provide a zig-zag course of the charge path, and wherein: said read-in chain includes electrodes; said first circuit arrangement comprises a chain of charge transfer elements arranged in parallel to the charge transfer elements of said read-in chain and including electrodes individually linked with the electrodes of the read-in chain, and pre-connected storage electrodes for filling the charge transfer elements with bias charges from a charge source; said read-out chain comprising electrodes; and said second circuit arrangement comprises a plurality of charge transfer elements connected to be driven in common with the transfer electrodes between the read-in chain and the plurality of charge transfer devices.

Claim 4

The improved memory of chain 1, wherein the read-in and read-out chains are constructed in double silicon technology having implanted shift areas and operating in two-phase operation, said charge transfer elements of said read-in and read-out chains constructed to provide a zig-zag course of the charge path, and wherein: said read-in chain includes electrodes; said first circuit arrangement comprises a chain of charge transfer elements arranged in parallel to the charge transfer elements of said read-in chain and including electrodes individually linked with the electrodes of the read-in chain, and pre-connected storage electrodes for filling the charge transfer elements with bias charges from a charge source; said read-out chain comprising electrodes; and said second circuit arrangement comprises a plurality of charge transfer elements connected to be driven in common with the transfer electrodes between the read-in chain and the plurality of charge transfer devices.

Claim 5

The improved memory of claim 2, wherein said plurality of charge transfer elements of said second circuit arrangement comprises: shift electrodes arranged parallel to the electrodes of said read-out chain and individually linked with the electrodes of said read-out chain, and connected to a charge sink.

Claim 6

The improved memory of chain 1, constructed as a four-phase charge transfer memory in simple double silicon technology, wherein: each of said read-in and read-out chains comprises first and second storage electrodes of the charge transfer elements, each of said storage electrodes being in the form of two bands having a tooth comb structure and comprising silicon-1 and silicon-2, respectively and extending parallel to one another with the comb teeth interengaging, and defining the areas of the read-in and read-out chains, with the band-shaped first and second shift electrodes extending parallel to one another in the tooth area so that a meander-like course of the charge path occurs, and in which the charges characterizing the information are always read out of the read-in chain into the parallel charge transfer devices and read-out of the parallel charge transfer devices into the read-out chain by way of the same storage electrodes; and said first circuit arrangement comprises a parallel chain of charge transfer devices including a plurality of shift electrodes arranged parallel to the first memory electrodes of the read-in chain and individually linked thereto, and having a pre-connected storage electrode connected to receive charges from a charge source; and said first circuit arrangement further comprises transfer electrodes connected to be driven in common with the transfer electrodes between the read-in chain and said parallel charge transfer devices.

Claim 7

The improved memory of chain 1, constructed as a four-phase charge transfer memory in simple double silicon technology, wherein: each of said read-in and read-out chains comprises first and second storage electrodes of the charge transfer elements, each of said storage electrodes being in the form of two bands having a tooth comb structure and comprising silicon-1 and silicon-2, respectively and extending parallel to one another with the comb teeth interengaging, and defining the areas of the read-in and read-out chains, with the band-shaped first and second shift electrodes extending parallel to one another in the tooth area so that a meander-like course of the charge path occurs, and in which the charges characterizing the information are always read out of the read-in chain into the parallel charge transfer devices and read-out of the parallel charge transfer devices into the read-out chain by way of the same storage electrodes; and said first circuit arrangement comprises a parallel chain of charge transfer devices including a plurality of shift electrodes arranged parallel to the first memory electrodes of the read-in chain and individually linked thereto, and having a pre-connected storage electrode connected to receive charges from a charge source; and said first circuit arrangement further comprises transfer electrodes connected to be driven in common with the transfer electrodes between the read-in chain and said parallel charge transfer devices.

Claim 8

The improved memory of claim 4, wherein: said second circuit arrangement comprises a plurality of shift electrodes arranged parallel to the second storage electrodes of the read-out chain and individually linked thereto, and connected with a charge sink.