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US4855953A
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Semiconductor memory device having stacked memory capacitors and method for manufacturing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1988-02-19
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Granted: 1989-08-08
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Expires: 2008-02-19
Abstract
Abstract A dynamic RAM comprises an array of memory cells, each of the memory cells comprising a single access transistor and a charge storage region. The charge storage region comprises a first capacitor memory including a P + region serving as an opposite electrode formed in the inner surface of a trench formed in a P type silicon substrate, a first capacitor dielectric film formed on the P + region and a common electrode layer serving as a memory terminal formed on the first capacitor dielectric film, and a second memory capacitor including the common electrode layer, a second capacitor dielectric film formed on the common electrode layer and a cell plate electrode formed on the second capacitor dielectric film. The memory terminal and a drain region of the access transistor are connected in a self-aligning manner by an electrode having a sidewall shape which is in contact with an end of the memory terminal. Thus, a contact hole need not be formed in the first capacitor dielectric film, so that decrease of the electrical reliability of the first capacitor dielectric film can be prevented. The drain region of the access transistor may be formed by self-alignment with the contact portion of the common electrode layer.
Inventors
- 👤 Katsuhiro Tsukamoto
- 👤 Masahiro Shimizu
- 👤 Kazuyasu Fujishima
- 👤 Yoshio Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:30
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H10B12/30; H10B12/37; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/256
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
214 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising a contact portion of said common electrode layer connecting said common electrode layer to the second electrode region of said transistor
Claim 2
Dependent Claim
214 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising a contact portion of said common electrode layer connecting said common electrode layer to the second electrode region of said transistor
Claim 3
Dependent Claim
28 words
A semiconductor memory device according to claim 1, wherein said second electrode region is beneath and in registration with a said contact portion of said common electrode layer.
Claim 4
Dependent Claim
32 words
A semiconductor memory device according to claim 1, wherein said second electrode region is formed by diffusion into said substrate of an impurity through said contact portion of said common electrode layer.
Claim 5
Dependent Claim
28 words
A semiconductor memory device according to claim 1, wherein said electrode contact portion of said common electrode layer is coplanar with said second electrode region of said transistor.
Claim 6
Dependent Claim
50 words
A semiconductor memory device according to claim 1, wherein common electrode layers of adjacent ones of said charge storage means are spaced apart from each other on said substrate, and wherein said device includes an isolation region formed by an insulating material on said substrate between said common electrode layers.
Claim 7
Dependent Claim
31 words
A semiconductor memory device according to claim 5, including a cell plate electrode formed through an insulation layer on said common electrode layer, said isolation region underlying said cell plate electrode.
Claim 8
Dependent Claim
151 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, wherein common electrode layers of adjacent ones of said charge storage means are spaced apart from each other on said substrate, and wherein said device includes an isolation region formed by an insulating material on said substrate between said common electrode layers.
Claim 9
Dependent Claim
151 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, wherein common electrode layers of adjacent ones of said charge storage means are spaced apart from each other on said substrate, and wherein said device includes an isolation region formed by an insulating material on said substrate between said common electrode layers.
Claim 10
Dependent Claim
36 words
A semiconductor memory device according to claim 7, wherein said charge storage means includes a cell plate electrode formed through an insulation layer on said common electrode layer, said isolation region underlying said cell plate electrode.
Claim 11
Dependent Claim
213 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising a contact portion of said common electrode layer self aligned with and connected to said second electrode region of said transistor.
Claim 12
Dependent Claim
213 words
A semiconductor memory device, comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising a contact portion of said common electrode layer self aligned with and connected to said second electrode region of said transistor.
Claim 13
Dependent Claim
217 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising an electrode self alignment with said common electrode layer for connecting said common electrode layer to the second electrode region of said transistor.
Claim 14
Dependent Claim
217 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means, a single read/write transistor and means for connecting said charge storage means and said transistor, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode region of a second conductivity type formed on the surface of said semiconductor substrate and connected to one of said bit lines, a second electrode region of the second conductivity type formed, spaced apart from said first electrode region, on the surface of said semiconductor substrate, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines, said connecting means comprising an electrode self alignment with said common electrode layer for connecting said common electrode layer to the second electrode region of said transistor.
Claim 15
Dependent Claim
84 words
A semiconductor memory device according to claim 10, wherein said first memory capacitor comprises an electrode region of the first conductivity type formed on the surface of said semiconductor substrate, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, said second memory capacitor comprises said common electrode layer, a second capacitor dielectric film formed on said common electrode layer, and a cell plate electrode formed on said second capacitor dielectric film.
Claim 16
Dependent Claim
107 words
A semiconductor memory device according to claim 10, wherein a trench is formed in the charge storage region of said semiconductor substrate, said first memory capacitor comprising, an electrode region of the first conductivity type formed on the surface of said semiconductor substrate including the side surface and the bottom surface of said trench, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, said second memory capacitor comprising said common electrode layer, a second capacitor dielectric film formed on said common electrode layer, and cell plate electrode formed on said second capacitor dielectric film.
Claim 17
Dependent Claim
41 words
A semiconductor memory device according to claim 10, wherein said connecting electrode comprises an electrode formed on the second electrode region of said transistor and having a sidewall shape which is in contact with an end of said common electrode layer.
Claim 18
Dependent Claim
22 words
A semiconductor memory device according to claim 10, wherein both said common electrode layer and said connecting electrode are formed of polysilicon.
Claim 19
Dependent Claim
18 words
A semiconductor memory device according to claim 10, which further comprises a region for isolating adjacent memory cells.
Claim 20
Dependent Claim
218 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means and a single read/write transistor connected to said charge storage means, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a semiconductor layer of the first conductivity type formed on said semiconductor substrate as the same layer as said common electrode layer, a first electrode region of a second conductivity type formed on the surface of said semiconductor layer and connected to one of said bit lines, a second electrode region of the second conductivity type formed on the surface of said semiconductor layer to be spaced apart from said first electrode region and in contact with said common electrode layer, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines.
Claim 21
Dependent Claim
218 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means and a single read/write transistor connected to said charge storage means, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a semiconductor layer of the first conductivity type formed on said semiconductor substrate as the same layer as said common electrode layer, a first electrode region of a second conductivity type formed on the surface of said semiconductor layer and connected to one of said bit lines, a second electrode region of the second conductivity type formed on the surface of said semiconductor layer to be spaced apart from said first electrode region and in contact with said common electrode layer, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines.
Claim 22
Dependent Claim
85 words
A semiconductor memory device according to claim 16, wherein said first memory capacitor comprises an electrode region of the first conductivity type formed on the surface of said semiconductor substrate, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, and said second memory capacitor comprises said common electrode layer, a second capacitor dielectric film formed on said common electrode layer, and a cell plate electrode formed on said second capacitor dielectric film.
Claim 23
Dependent Claim
108 words
A semiconductor memory device according to claim 16, wherein a trench is formed in the charge storage region of said semiconductor substrate, said first memory capacitor comprising an electrode region of the first conductivity type formed on the surface of said semiconductor substrate including the side surface and the bottom surface of said trench, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, said second memory capacitor comprising said common electrode layer, a second capacitor dielectric film formed on said common electrode layer, and a cell plate electrode formed on said second capacitor dielectric film.
Claim 24
Dependent Claim
17 words
A semiconductor memory device according to claim 16, wherein said common electrode layer comprises a polysilicon layer.
Claim 25
Dependent Claim
25 words
A semiconductor memory device according to claim 19, wherein said semiconductor layer comprises an epitaxial layer formed as the same layer as said polysilicon layer.
Claim 26
Dependent Claim
18 words
A semiconductor memory device according to claim 16, which further comprises a region for isolating adjacent memory cells.
Claim 27
Dependent Claim
235 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means and a read/write transistor connected to said charge storage means, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode layer formed as the same layer as said common electrode layer and to be connected to said common electrode layer, on said semiconductor substrate, a second electrode layer formed as the same layer as said common electrode layer and spaced apart from said common electrode layer and connected to one of said bit lines, on said semiconductor substrate, a first electrode region of a second conductivity type formed in said semiconductor substrate under said first electrode layer, a second electrode region of the second conductivity type formed in said semiconductor substrate under said second electrode layer, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines.
Claim 28
Dependent Claim
235 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type, a plurality of word lines and a plurality of bit lines formed on said semiconductor substrate to intersect with each other, and memory cells formed at intersections of said word lines and said bit lines, each of said memory cells comprising charge storage means and a read/write transistor connected to said charge storage means, said charge storage means comprising a common electrode layer formed on said semiconductor substrate, and first and second memory capacitors stacked on said semiconductor substrate to be opposed to each other with said common electrode layer interposed therebetween, said transistor comprising a first electrode layer formed as the same layer as said common electrode layer and to be connected to said common electrode layer, on said semiconductor substrate, a second electrode layer formed as the same layer as said common electrode layer and spaced apart from said common electrode layer and connected to one of said bit lines, on said semiconductor substrate, a first electrode region of a second conductivity type formed in said semiconductor substrate under said first electrode layer, a second electrode region of the second conductivity type formed in said semiconductor substrate under said second electrode layer, and a control electrode formed on a region between said first electrode region and said second electrode region and corresponding to one of said plurality of word lines.
Claim 29
Dependent Claim
85 words
A semiconductor memory device according to claim 22, wherein said first memory capacitor comprises an electrode region of the first conductivity type formed on the surface of said semiconductor substrate, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, and said second memory capacitor comprises said common electrode layer, a second capacitor dielectric film formed o said common electrode layer, and a cell plate electrode formed on said second capacitor dielectric film.
Claim 30
Dependent Claim
106 words
A semiconductor memory device according to claim 22, wherein a trench is formed in a charge storage region of said semiconductor substrate, said first memory capacitor comprising an electrode region of the first conductivity type formed on said semiconductor substrate surface including the side surface and the bottom surface of said trench, a first capacitor dielectric film formed on said electrode region, and said common electrode layer formed on said first capacitor dielectric film, said second memory capacitor comprising said common electrode layer, a second capacitor dielectric film formed on said common electrode layer, and a cell plate electrode formed on said second capacitor dielectric film.
Claim 31
Dependent Claim
17 words
A semiconductor memory device according to claim 22, wherein said common electrode layer comprises a polysilicon layer.
Claim 32
Dependent Claim
28 words
A semiconductor memory device according to claim 25, wherein said first and second electrode layers comprise a polysilicon layer formed as the same layer as said polysilicon layer.
Claim 33
Dependent Claim
33 words
A semiconductor memory device according to claim 22, wherein said second electrode region is formed in a region other than a portion where said second electrode layer and the bit line are connected.
Claim 34
Dependent Claim
30 words
A semiconductor memory device according to claim 22, wherein said control electrode has a shape in which both ends thereof are provided on said first and second electrode layers, respectively.
Claim 35
Dependent Claim
18 words
A semiconductor memory device according to claim 22, which further comprises a region for isolating adjacent memory cells.
Claim 36
Dependent Claim
39 words
A semiconductor memory device according to claim 29, wherein said isolation region is formed of an oxide film embedded between respective ends opposite to said first electrode layers, of the respective common electrode layers of the adjacent memory cells.
References Cited (Backward Citations)
US4742018A
Cited
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