Patent US4853347A successfully refreshed from Google Patents.
US4853347A
Expired / Lapsed
US
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Selective metal deposition process
Assignee: NXP USA Inc
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Filing: 1988-10-03
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Granted: 1989-08-01
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Expires: 2008-10-03
Abstract
Abstract A method for the selective deposition of metals in semiconductor device manufacturing wherein a wafer surface is subjected to a hydrogen species that reduces oxidation on conducting materials while also removing impurities from non-conducting materials. Metals are then selectively deposited upon the conducting materials and not upon the non-conducting materials. It should be understood that the hydrogen treatment step and the selective metal deposition step may be performed simultaneously or by using two separate processing steps.
Inventors
- 👤 Yefim Bukhman
- 👤 Gary F. Witting
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:27
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
139 words
A method for the selective deposition of tungsten in semiconductor device manufacturing comprising the steps of: providing a wafer surface including semiconductor structures disposed thereon, said wafer surface having both conducting and non-conducting materials; placing said wafer surface into an RIE reactor and subjecting it to a hydrogen plasma; and placing said wafer surface into a CVD reactor and selectively depositing tungsten on said conducting materials of said wafer surface, said tungsten being derived from tungsten hexafluoride that is reduced by hydrogen on said wafer surface, the wafer temperature being in the range of 450 to 500 degrees centigrade, the reactor pressure being in the range of 100 to 150 millitorr, the hydrogen gas flow being in the range of 20 to 60 SCCM and the tungsten hexafluoride gas flow being in the range of 2 to 6 SCCM.
Claim 2
Independent Claim
139 words
A method for the selective deposition of tungsten in semiconductor device manufacturing comprising the steps of: providing a wafer surface including semiconductor structures disposed thereon, said wafer surface having both conducting and non-conducting materials; placing said wafer surface into an RIE reactor and subjecting it to a hydrogen plasma; and placing said wafer surface into a CVD reactor and selectively depositing tungsten on said conducting materials of said wafer surface, said tungsten being derived from tungsten hexafluoride that is reduced by hydrogen on said wafer surface, the wafer temperature being in the range of 450 to 500 degrees centigrade, the reactor pressure being in the range of 100 to 150 millitorr, the hydrogen gas flow being in the range of 20 to 60 SCCM and the tungsten hexafluoride gas flow being in the range of 2 to 6 SCCM.
Claim 3
Dependent Claim
58 words
The method of claim 1 wherein the placing said wafer surface into a CVD reactor step includes selectively depositing tungsten on the wafer surface wherein the wafer temperature is approximately 480 degrees centigrade, the reactor pressure is approximately 120 millitorr, the hydrogen gas flow is approximately 40 SCCM and the tungsten hexafluoride gas flow is approximately 4 SCCM.
Claim 4
Dependent Claim
80 words
The method of claim 1 wherein the placing said wafer surface into an RIE reactor step includes the wafer temperature being in a range of 45 to 50 degrees centigrade, the reactor pressure being in a range of 80 to 120 millitorr, a hydrogen gas flow being in a range of 10 to 80 SCCM, the RF power being in a range of 1000 to 1500 watts and the reaction time being in the range of 1 to 10 minutes.
Claim 5
Dependent Claim
55 words
The method of claim 3 wherein the placing said wafer surface into an RIE reactor step includes the wafer temperature being approximately 48 degrees centigrade, the reactor pressure being approximately 90 millitorr, the hydrogen gas flow being approximately 50 SCCM, the RF power being approximately 1225 watts and the reaction time being approximately 5 minutes.
Claim 6
Independent Claim
133 words
A method for the selective deposition of metals in semiconductor device manufacturing comprising the steps of: providing a wafer surface including semiconductor structures disposed thereon, said wafer surface having both conducting and non-conducting materials; placing said wafer surface into an RIE reactor and subjecting it to a hydrogen plasma, the wafer temperature being in the range of 45 to 50 degrees centigrade, the reactor pressure being in the range of 80 to 120 millitorr, the hydrogen gas flow being in the range of 10 to 80 SCCM, the RF power being in the range of 1000 to 1500 watts and the reaction time being in the range of 1 to 10 minutes; and placing said wafer surface into a CVD reactor and selectively depositing metal on said conducting materials of said wafer surface.
Claim 7
Independent Claim
133 words
A method for the selective deposition of metals in semiconductor device manufacturing comprising the steps of: providing a wafer surface including semiconductor structures disposed thereon, said wafer surface having both conducting and non-conducting materials; placing said wafer surface into an RIE reactor and subjecting it to a hydrogen plasma, the wafer temperature being in the range of 45 to 50 degrees centigrade, the reactor pressure being in the range of 80 to 120 millitorr, the hydrogen gas flow being in the range of 10 to 80 SCCM, the RF power being in the range of 1000 to 1500 watts and the reaction time being in the range of 1 to 10 minutes; and placing said wafer surface into a CVD reactor and selectively depositing metal on said conducting materials of said wafer surface.
Claim 8
Dependent Claim
55 words
The method of claim 5 wherein the placing said wafer surface into an RIE reactor step includes the wafer temperature being approximately 48 degrees centigrade, the reactor pressure being approximately 90 millitorr, the hydrogen gas flow being approximately 50 SCCM, the RF power being approximately 1225 watts and the reaction time being approximately 5 minutes.
Claim 9
Dependent Claim
36 words
The method of claim 5 wherein the placing said wafer surface into a CVD reactor step includes selectively depositing a metal derived from a metal containing compound that is reduced by hydrogen, on the wafer surface.
Claim 10
Dependent Claim
78 words
The method of claim 7 wherein the placing said wafer surface into a CVD reactor step includes selectively depositing tungsten of the wafer surface wherein the wafer temperature is in the range of 450 to 500 degrees centigrade, the reactor pressure is in the range of 100 to 150 millitorr, a hydrogen gas flow is in the range of 20 to 60 SCCM and a tungsten hexafluoride gas flow is in the range of 2 to 6 SCCM.
Claim 11
Dependent Claim
58 words
The method of claim 8 wherein the placing said wafer surface into a CVD reactor step includes selectively depositing tungsten on the wafer surface wherein the wafer temperature is approximately 480 degrees centigrade, the reactor pressure is approximately 120 millitorr, the hydrogen gas flow is approximately 40 SCCM and the tungsten hexafluoride gas flow is approximately 4 SCCM.
References Cited (Backward Citations)
US4517225A
Cited
US4766006A
Cited
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