Sputtering process and an apparatus for carrying out the same

Claim 2

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; and sixth means for producing a central magentic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate.

Claim 3

The sputtering apparatus of claim 1 further comprising a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source.

Claim 4

A sputtering apparatus according to claim 2 wherein said means for inducing further comprises means for providing contact with the surface film of the substrate means for moving said means for providing contact along a guide.

Claim 5

The sputtering apparatus of claim 1 further comprising means for inducing a negative DC voltage on said first surface of said substrate wherein said means for inducing a negative DC voltage comprises a source of a high frequency voltage connected to said supporting electrode.

Claim 6

The sputtering apparatus of claim 1 further comprising means for controlling a temperature of said substrate.

Claim 7

A sputtering apparatus according to claim 1, wherein said outer magnetic device comprises a permanent magnet.

Claim 8

A sputtering apparatus according to claim 1, wherein said outer magnetic device comprises an electromagnet.

Claim 9

A sputtering apparatus according to claim 7, wherein said outer magnetic device further provides a yoke disposed in a space surrounded by the electromagnet.

Claim 10

A sputtering apparatus according to claim 1, wherein said inner magnetic device comprises a permanent magnet.

Claim 11

A sputtering apparatus according to claim 1, wherein said inner magnetic device comprises an electromagnet.

Claim 12

A sputtering apparatus according to claim 1, further comprising: means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.

Claim 13

A sputtering apparatus according to claim 1, further comprising: means for moving said substrate supporting electrode between a transfer position for mounting the substrate on said substrate supporting electrode and a processing position for subjecting the substrate to a sputtering process.

Claim 14

A sputtering apparatus according to claim 1, further comprising: means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate.

Claim 15

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source; and means for controlling a temperature of said substrate.

Claim 16

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source; and means for controlling a temperature of said substrate.

Claim 17

A sputtering apparatus according to claim 14, further comprising: means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.

Claim 18

A sputtering apparatus according to claim 14, further comprising: means for moving said substrate supporting electrode between a transfer position for mounting the substrate on said substrate supporting electrode and a processing position for subjecting the substrate to a sputtering process.

Claim 19

A sputtering apparatus according to claim 16, wherein said means of controlling a temperature of said substrate comprises: means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate.

Claim 20

A sputtering apparatus according to claim 14, wherein said means for inducing further comprises means for providing contact with a surface film of the substrate means for moving said means for providing contact along a guide.

Claim 21

A sputtering apparatus according to claim 14, wherein said means for controlling a temperature of said substrate comprises: means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate.

Claim 22

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; means for inducing a negative DC voltage on said first surface of said substrate wherein said means for inducing a negative DC voltage comprises a source of a high frequency voltage connected to said supporting electrode; and means for controlling a temperature of said substrate.

Claim 23

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; means for inducing a negative DC voltage on said first surface of said substrate wherein said means for inducing a negative DC voltage comprises a source of a high frequency voltage connected to said supporting electrode; and means for controlling a temperature of said substrate.

Claim 24

A sputtering apparatus according to claim 20, further comprising: means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.

Claim 25

A sputtering apparatus according to claim 20, further comprising: means for moving said substrate supporting electrode between a transfer position for mounting the substrate on said substrate supporting electrode and a processing position for subjecting the substrate to a sputtering process.

Claim 26

A sputtering apparatus according to claim 20, wherein said means for controlling a temperature of said substrate comprises: means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate.

Claim 27

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source; means for controlling a temperature of said substrate comprising means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate; and means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.

Claim 28

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises: first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode; an anode electrode; second means, connected to said cathode electrode and said anode electrode, for generating an electric field; third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side; fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode; fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means; sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate; a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source; means for controlling a temperature of said substrate comprising means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate; and means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.