Patent US4849375A successfully refreshed from Google Patents.
US4849375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gaseous cleaning method for silicon devices
Assignee: Eastman Kodak Co
•
Filing: 1988-12-23
•
Granted: 1989-07-18
•
Expires: 2008-12-23
Abstract
Abstract A method for cleaning the surface of a silicon semiconductor device comprising the steps of: (a) exposing, for a first time, said device for a predetermined time period to an anhydrous cleaning gas mixture containing nitric oxide and hydrogen chloride together with an inert carrier gas; and (b) exposing, for a second time, said device for a predetermined second time period to a gaseous plasma formed of CF4, H2 and N2 at RF power.
Inventors
- 👤 Ronald Gluck
- 👤 David P. Hamblen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:11
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; Y; Y10; Y10S; Y10S148/00; Y10S148/017
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
98 words
A method for the manufacture of a silicon semiconductor device in which metallic impurities and a silicon oxynitrochloride film is removed from the surface of said device, said method comprising in sequence the steps of: (a) exposing, for a first time, said device for a predetermined time period to an anhydrous cleaning gas mixture containing nitric oxide and hydrogen chloride together with an inert carrier gas; and (b) exposing, for a second time, said device for a predetermined second time period to a gaseous plasma formed of CF 4 , H 2 and N 2 at RF power.
Claim 2
Independent Claim
98 words
A method for the manufacture of a silicon semiconductor device in which metallic impurities and a silicon oxynitrochloride film is removed from the surface of said device, said method comprising in sequence the steps of: (a) exposing, for a first time, said device for a predetermined time period to an anhydrous cleaning gas mixture containing nitric oxide and hydrogen chloride together with an inert carrier gas; and (b) exposing, for a second time, said device for a predetermined second time period to a gaseous plasma formed of CF 4 , H 2 and N 2 at RF power.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein sequence of steps (a) and (b) is repeated at least one more time.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein step (a) is carried out using an RF plasma of the cleaning gas mixture at temperatures below 1100° C.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein sequence of steps (a) and (b) is repeated a multiple number of times.
Claim 6
Dependent Claim
32 words
The method of claim 1 wherein during step (a) the device is heated between 850 to 1100° C. and in step (b) the device is heated between 115° C. and 200° C.
Claim 7
Dependent Claim
17 words
The method of claim 5 wherein steps (a) and (b) is repeated a multiple number of times.
References Cited (Backward Citations)
US4159917A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |