Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen

Claim 2

An active matrix display screen comprising a first wall carrying a first level constituted by a matrix of blocks and a group of addressing columns and a second level comprising a group of addressing rows, said two levels being separated by a stack of a semiconductor layer and an insulating layer, said screen also comprising a second wall covered by a counterelectrode and a liquid crystal between these two walls, wherein in the stack separating the two levels, the semiconductor is of hydrogenated amorphous silicon carbide, the semiconductor layer and the insulating layer then covering the entire first wall.

Claim 3

A display screen according to claim 1, wherein the hydrogenated amorphous silicon carbide comprises carbon present at a concentration of a few percent.

Claim 4

A display screen according to claim 1, wherein the thickness of the hydrogenated amorphous silicon carbide layer is approximately 50 nm.

Claim 5

A display screen according to claim 1, wherein the first level comprising the addressing columns and blocks is in contact with the first wall and wherein the second level with the addressing rows is positioned above the stack constituted by the hydrogenated silicon carbide and the insulant.

Claim 6

A display screen according to claim 1, wherein the second level comprising the addressing rows is in contact with the first wall and wherein the first level comprising the addressing columns and the blocks is positioned above the stack constituted by the insulant and the hydrogenated silicon carbide.

Claim 7

A process for the production of a display screen according to claim 1, consisting of depositing on a first wall by only two photogravure operations, a first level comprising a group of addressing columns, a matrix of blocks and a second level comprising a group of addressing rows, and forming a stack of a semiconductor layer and an insulating layer separating the two levels, wherein the semiconductor is of hydrogenated amorphous silicon carbide and the semiconductor layer and the insulating layer are located over the entire wall.

Claim 8

A process according to claim 6, wherein it comprises depositing a layer of a first transparent conductive material on an insulating substrate, a first photogravure applied to said first layer to constitute a matrix of blocks, each block being connected to a block segment, said first photogravure leaving behind columns of said first conductive material, deposition of a hydrogenated amorphous silicon carbide layer, deposition of an insulating layer, deposition of a layer of a second conductive material, second photogravure applied solely to said second conductive material, said second photogravure leaving behind rows of the second condutive material, these rows passing above the block segments, the overlap zones of a row with a column and with a block segment defining the source and drain of a thin film transistor, the gate of said transistor being constituted by that part of the row located between the block segment and the column.

Claim 9

A process according to claim 6, wherein it comprises depositing on an insulating substrate a layer of a conductive material, photogravure of said layer to leave behind rows with segments perpendicular to the rows, deposition of an insulating layer, deposition of a hydrogenated amorphous silicon carbide layer, deposition of a layer of transparent conductive material and photogravure of the last layer to form columns and blocks partly overlapping the segments perpendicular to the rows.