Semiconductor photodetector device with light responsive PN junction gate

Claim 2

A semiconductor photodetector device for a solid state image sensing device, comprising: an insulating gate field effect transistor having a channel region and source and drain regions of a first conductivity type, a gate electrode of a second conductivity type, opposite to the first conductivity type, and a gate extension portion of the first conductivity type, said gate electrode and said gate extension portion forming a PN junction outside the channel region of said transistor and inside a photodetector area for detecting light; and means for applying a first voltage to said gate extension portion to reverse bias the PN junction and enable detection of light when the PN junction becomes temporarily conductive and supplies a voltage to said gate electrode, the voltage having a level determined by the intensity of the light of the photodetector area, and for applying a second voltage to said gate extension portion to forward bias the PN junction, reset said photodetector device and release carriers stored in said gate electrode.

Claim 3

A photodetector device according to claim 1, wherein said transistor further includes an isolation oxide layer surrounding the channel region, source region and drain region of said transistor, the PN junction being located on said isolation oxide layer.

Claim 4

A photodetector device according to claim 1, wherein said gate electrode and said gate extension portion are made of single crystalline silicon.

Claim 5

A photodetector device according to claim 1, wherein said transistor is formed on a single crystalline silicon substrate and further includes a gate oxide layer between said gate electrode and the single crystalline silicon substrate.

Claim 6

A photodetector device according to claim 1, wherein said transistor further includes a source electrode connected to said source region and a drain electrode connected to said drain region.

Claim 7

A photodetector device according to claim 1, wherein said transistor further includes a second gate electrode to form a dual gate type field effect transistor.

Claim 8

A semiconductor photodetector device comprising: an insulated gate field effect transistor having a channel region and source and drain regions of a first conductivity type, a gate electrode of doped silicon having a second conductivity type, opposite to the first conductivity type, and a gate extension portion of doped silicon having the first conductivity type, at least adjacent portions of said gate electrode and said gate extension portion being single crystalline silicon and forming a PN junction outside the channel region of said transistor and inside a photodetector area for detecting light; and means for applying a first voltage to said gate extension portion to reverse bias the PN junction and enable detection of light when the PN junction becomes temporarily conductive and supplies a voltage to said gate electrode, the voltage having a level determined by the intensity of the light of the photodetector area, and for applying a second voltage to said gate extension portion to forward bias the PN junction, reset said photodetector device and release carriers stored in said gate electrode.

Claim 9

A semiconductor photodetector device comprising: an insulated gate field effect transistor having a channel region and source and drain regions of a first conductivity type, a gate electrode of doped silicon having a second conductivity type, opposite to the first conductivity type, and a gate extension portion of doped silicon having the first conductivity type, at least adjacent portions of said gate electrode and said gate extension portion being single crystalline silicon and forming a PN junction outside the channel region of said transistor and inside a photodetector area for detecting light; and means for applying a first voltage to said gate extension portion to reverse bias the PN junction and enable detection of light when the PN junction becomes temporarily conductive and supplies a voltage to said gate electrode, the voltage having a level determined by the intensity of the light of the photodetector area, and for applying a second voltage to said gate extension portion to forward bias the PN junction, reset said photodetector device and release carriers stored in said gate electrode.

Claim 10

A photodetector device according to claim 7, wherein said transistor further includes an isolation oxide layer surrounding the channel region, source region and drain region of said transistor, the PN junction being located on said isolation oxide layer.

Claim 11

A photodetector device according to claim 7, wherein said gate electrode and said gate extension portion, excluding the adjacent single crystalline silicon portions, are polycrystalline silicon.

Claim 12

A photodetector device according to claim 7, wherein said transistor is formed on a single crystalline silicon substrate and further includes a gate oxide layer between said gate electrode and the single crystalline silicon substrate.

Claim 13

A photodetector device according to claim 7, wherein said transistor further includes a source electrode connected to said source region and a drain electrode connected to said drain region.

Claim 14

A photodetector device according to claim 7, wherein said transistor further includes a second gate electrode to form a dual gate type field effect transistor.