US4841348A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image pickup device
Assignee: Fujifilm Holdings Corp
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Filing: 1987-07-09
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Granted: 1989-06-20
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Expires: 2007-07-09
Abstract
Abstract An solid state optical pickup device having integrally formed therein both a photosensitive matrix and peripheral circuits thereto. Both the photosensitive matrix and the peripheral circuit are built according to CMOS IC technology. A photoconductive film overlies the entire photosensitive matrix and is electrically connected to each of the charge accumulating regions in the matrix.
Inventors
- 👤 Makoto Shizukuishi
- 👤 Ryuji Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:12
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
140 words
A solid state pickup device, comprising: a semiconductor substrate of a first conductivity type; a photosensitive section comprising: a region of a second conductivity type formed in said semiconductor substrate, said region having semiconductive channels of the first conductivity type located at a surface of said region, and having a plurality of charge accumulation means corresponding to respective picture elements; means for transferring signals accumulated in said charge accumulation means; a logic circuit integrally formed with said region in said substrate and at a periphery of said region; and a photoconductive film formed on, and contiguous with, said substrate including said region and said logic circuit, and means for electrically coupling said photoconductive film to each of said plurality of charge accumulation means, and for supplying thereto an electric signal produced in response to light incident on said photoconductive film.
Claim 2
Dependent Claim
140 words
A solid state pickup device, comprising: a semiconductor substrate of a first conductivity type; a photosensitive section comprising: a region of a second conductivity type formed in said semiconductor substrate, said region having semiconductive channels of the first conductivity type located at a surface of said region, and having a plurality of charge accumulation means corresponding to respective picture elements; means for transferring signals accumulated in said charge accumulation means; a logic circuit integrally formed with said region in said substrate and at a periphery of said region; and a photoconductive film formed on, and contiguous with, said substrate including said region and said logic circuit, and means for electrically coupling said photoconductive film to each of said plurality of charge accumulation means, and for supplying thereto an electric signal produced in response to light incident on said photoconductive film.
Claim 3
Dependent Claim
20 words
The device according to claim 1, further comprising a transparent electrode layer formed on, and contiguous with, said photoconductive film.
Claim 4
Dependent Claim
21 words
The device according to claim 2, further comprising a color filter layer formed on, and contiguous with, said transparent electrode layer.
Claim 5
Dependent Claim
43 words
The device according to claim 3, further comprising a light shielding layer formed on, and contiguous with, said color filter layer such that portions of said photoconductive film other than the portion of said photoconductive film directly above said region, are optically shielded.
Claim 6
Dependent Claim
25 words
The device according to claim 4, further comprising a glass layer formed on, and contiguous with, said light shielding layer and said color filter layer.
Claim 7
Dependent Claim
30 words
The device according to claim 1, wherein the first conductivity is of n-type, the second conductivity is of p-type and wherein said charge accumulation means is an n-channel MOS transistor.
Claim 8
Dependent Claim
15 words
The device according to claim 1, wherein said charge accumulation means comprises an accumulation diode.
Claim 9
Dependent Claim
14 words
The device according to claim 1, wherein said transfer means comprises a charge-coupled-device (CCD).
Claim 10
Dependent Claim
48 words
The device according to claim 1, wherein said region includes a plurality of sources and drains, said sources and drains both being of the first conductivity type, and a plurality of gate electrodes, each of said gate electrodes forming conduction channels between respective pairs of sources and drains.
Claim 11
Dependent Claim
18 words
The device according to claim 9, wherein said region includes an accumulation diode of the second conductivity type
Claim 12
Dependent Claim
34 words
The device according to claim 9, wherein said semiconductor substrate includes a horizontal shift register and a vertical shift register, and wherein each of said gate electrodes is connected to said horizontal shift register.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |