Modified conductivity modulated MOSFET

Claim 2

A semiconductor device having improved speed and frequency switching characteristics, comprising: a first drain/collector layer of a first semiconductor conductivity type having a high impurity concentration, said layer having upper and lower major surfaces; a drift layer of the first semiconductor conductivity type formed on said upper major surface of said first semiconductor layer; base region of a second semiconductor conductivity type formed in an island shape in predetermined regions on an upper surface of said drift layer; a source/emitter island region of the first semiconductor conductivity type having a high impurity concentration and formed in an island shape in predetermined regions of an upper surface of said base regions; and a control electrode formed through an insulating film in a predetermined region on said upper surface of said drift layer and on an upper surface of said base regions; a second drain/collector region of the second semiconductor conductivity type having a high impurity concentration and formed in an island shape on said lower major surface of said first drain/collector semiconductor layer and in alignment with said source/emitter island region.

Claim 3

A semiconductor device having improved speed and frequency switching characteristics, comprising: a first drain/collector layer of a first semiconductor conductivity type having a high impurity concentration, said first drain/collector layer having upper and lower major surfaces; a drift layer of the first semiconductor conductivity type formed on said upper surface of said first drain/collector layer; base regions of a second semiconductor conductivity type formed in an island shape in predetermined regions on an upper surface of said drift layer; source/emitter island regions of the first conductivity type having a high impurity concentration, each formed in an island shape in a predetermined region of an upper surface of said base regions spaced apart from others of said source/emitter island regions; a gate electrode formed through an insulating film in a predetermined region on said upper surface of said drift layer and on an upper surface of said base regions; a second drain/collector region of the second semiconductor conductivity type having a high impurity concentration and formed in an island shape on said lower major surface of said first drain/collector layer above, and in alignment with, said gate electrode, said second drain/collector region having a width which is less than a width of said gate electrode.

Claim 4

A semiconductor device having improved speed and frequency switching characteristics, comprising: a first drain/collector layer of a first semiconductor conductivity type having a high impurity concentration, said first drain/collector layer having upper and lower major surfaces; a drift layer of the first semiconductor conductivity type formed on said upper surface of said first drain/collector layer; base regions of a second semiconductor conductivity type formed in an island shape in predetermined regions on an upper surface of said drift layer; source/emitter island regions of the first conductivity type having a high impurity concentration, each formed in an island shape in a predetermined region of an upper surface of said base regions spaced apart from others of said source/emitter island regions; a gate electrode formed through an insulating film in a predetermined region on said upper surface of said drift layer and on an upper surface of said base regions; a second drain/collector region of the second semiconductor conductivity type having a high impurity concentration and formed in an island shape on said lower major surface of said first drain/collector layer above, and in alignment with, said gate electrode, said second drain/collector region having a width which is less than a width of said gate electrode.

Claim 5

A semiconductor device having improved speed and frequency switching characteristics, comprising: a first drain/collector layer of a first semiconductor conductivity type having a high impurity concentration, said layer having upper and lower major surfaces; a drift layer of the first semiconductor conductivity type formed on said upper major surface of said first semiconductor layer; first and second spaced apart base regions of a second semiconductor conductivity type formed in an island shape in predetermined regions on an upper surface of said drift layer, each of said base regions including first and second source/emitter island regions of the first semiconductor conductivity type having a high impurity concentration and formed in an island shape in predetermined, spaced apart, regions of an upper surface of each base region; a control electrode formed through an insulating film in a predetermined region on said upper surface of said drift layer between said first and second base regions and on an upper surface of said first and second base regions; a plurality of spaced apart second drain/collector regions of the second semiconductor conductivity type having a high impurity concentration, each formed in an island shape on said lower major surface of said first drain/collector semiconductor layer and in alignment with a corresponding one of said source/emitted semiconductor island regions.

Claim 6

A semiconductor device having improved speed and frequency switching characteristics, comprising: a first drain/collector layer of a first semiconductor conductivity type having a high impurity concentration, said layer having upper and lower major surfaces; a drift layer of the first semiconductor conductivity type formed on said upper major surface of said first semiconductor layer; first and second spaced apart base regions of a second semiconductor conductivity type formed in an island shape in predetermined regions on an upper surface of said drift layer, each of said base regions including first and second source/emitter island regions of the first semiconductor conductivity type having a high impurity concentration and formed in an island shape in predetermined, spaced apart, regions of an upper surface of each base region; a control electrode formed through an insulating film in a predetermined region on said upper surface of said drift layer between said first and second base regions and on an upper surface of said first and second base regions; a plurality of spaced apart second drain/collector regions of the second semiconductor conductivity type having a high impurity concentration, each formed in an island shape on said lower major surface of said first drain/collector semiconductor layer and in alignment with a corresponding one of said source/emitted semiconductor island regions.