US4841239A
Expired / Lapsed
US
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Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies
Assignee: Siemens AG
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Filing: 1988-05-20
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Granted: 1989-06-20
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Expires: 2008-05-20
Abstract
Abstract Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness (D) of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current I G I/ O occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.
Inventors
- 👤 Helmut Foell
- 👤 Volker Lehmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:47
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
256 words
A method for identifying the diffusion length (L) of minority charge carriers and their topical fluctuations and for non-destructive detection of flaws and impurities in a semiconductor crystal body, comprising the steps of: (a) placing the semiconductor crystal body between two electrolyte-filled measuring chamber halves so that a front side and a backside of the semiconductor crystal body are each in contact with electrolyte contained in both measuring chamber halves; (b) connecting the semiconductor crystal body to a voltage source via an ohmic contact and applying a voltage between the backside of the semiconductor crystal body and an electrode of the measuring chamber half connected to the backside of the semiconductor crystal body so that a blocking space charge zone is formed at the backside of the semiconductor crystal body; (c) irridating with light the front side of the semiconductor crystal body; (d) measuring the photocurrent I G of the minority charge carriers occurring at the backside during the irradiation, (e) applying a voltage between the front side of the semiconductor crystal body and an electrode of the measuring chamber half connected to the front side of the semiconductor crystal body so that a blocking space charge zone is formed at the front side of the semiconductor crystal body; (f) measuring the photocurrent I 0 of substantially generated minority charge carriers occurring at the front side of the semiconductor crystal body upon irradiation; (g) calculating the diffusion length (L) from the mathematical equation: ##EQU3## where α is the absorption coefficient and D is the specimen thickness.
Claim 2
Independent Claim
256 words
A method for identifying the diffusion length (L) of minority charge carriers and their topical fluctuations and for non-destructive detection of flaws and impurities in a semiconductor crystal body, comprising the steps of: (a) placing the semiconductor crystal body between two electrolyte-filled measuring chamber halves so that a front side and a backside of the semiconductor crystal body are each in contact with electrolyte contained in both measuring chamber halves; (b) connecting the semiconductor crystal body to a voltage source via an ohmic contact and applying a voltage between the backside of the semiconductor crystal body and an electrode of the measuring chamber half connected to the backside of the semiconductor crystal body so that a blocking space charge zone is formed at the backside of the semiconductor crystal body; (c) irridating with light the front side of the semiconductor crystal body; (d) measuring the photocurrent I G of the minority charge carriers occurring at the backside during the irradiation, (e) applying a voltage between the front side of the semiconductor crystal body and an electrode of the measuring chamber half connected to the front side of the semiconductor crystal body so that a blocking space charge zone is formed at the front side of the semiconductor crystal body; (f) measuring the photocurrent I 0 of substantially generated minority charge carriers occurring at the front side of the semiconductor crystal body upon irradiation; (g) calculating the diffusion length (L) from the mathematical equation: ##EQU3## where α is the absorption coefficient and D is the specimen thickness.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein the voltage between the backside of the semiconductor crystal body and the electrolyte residing in contact therewith is controlled between method steps (d) and (e).
Claim 4
Dependent Claim
39 words
The method according to claim 1, wherein the irradiation of the front side of the semiconductor crystal body with light occurs over the entire surface thereof, so that the average diffusion length (L) is calculated from the mathematical equation.
Claim 5
Dependent Claim
25 words
The method according to claim 1, wherein the semiconductor crystal body is scanned with a light ray so that a topically resolved measurement results therefrom.
Claim 6
Dependent Claim
13 words
The method according to claim 1, wherein the light is a laser light.
Claim 7
Dependent Claim
180 words
A measuring instrument for identifying the diffusion length of minority charge carriers and their topical fluctuations for non-destructive detection of flaws and impurities in a semiconductor crystal body comprising: (a) two measuring chamber halves held by a central frame that can be individually filled with electrolyte and each of which contains an electrode; (b) a holding mechanism in the central frame for the semiconductor crystal body such that the semiconductor crystal body can be positioned between the measuring chamber halves such that a front side and a backside of the semiconductor crystal body are each in contact with the electrolyte of the measuring chamber halves, respectively; (c) a terminal for producing an ohmic contact to the semiconductor crystal body; (d) at least one light source providing a light ray directed onto one surface of the semiconductor crystal body; (e) a constant voltage source connected to the terminal and the electrolyte for applying a constant voltage between the semiconductor crystal body and the electrolyte; and (f) an ammeter means for measuring current flowing between the semiconductor crystal body and the electrolyte.
Claim 8
Dependent Claim
180 words
A measuring instrument for identifying the diffusion length of minority charge carriers and their topical fluctuations for non-destructive detection of flaws and impurities in a semiconductor crystal body comprising: (a) two measuring chamber halves held by a central frame that can be individually filled with electrolyte and each of which contains an electrode; (b) a holding mechanism in the central frame for the semiconductor crystal body such that the semiconductor crystal body can be positioned between the measuring chamber halves such that a front side and a backside of the semiconductor crystal body are each in contact with the electrolyte of the measuring chamber halves, respectively; (c) a terminal for producing an ohmic contact to the semiconductor crystal body; (d) at least one light source providing a light ray directed onto one surface of the semiconductor crystal body; (e) a constant voltage source connected to the terminal and the electrolyte for applying a constant voltage between the semiconductor crystal body and the electrolyte; and (f) an ammeter means for measuring current flowing between the semiconductor crystal body and the electrolyte.
Claim 9
Dependent Claim
28 words
The measuring instrument according to claim 6, wherein the measuring instrument further comprises an electrical control circuit that keeps the voltage adjacent to the semiconductor crystal body constant.
Claim 10
Dependent Claim
26 words
The measuring instrument according to claim 6, wherein the measuring chamber halves are composed of material that is acid-resistant and at least resistant to hydrofluoric acid.
Claim 11
Dependent Claim
14 words
The measuring instrument according to claim 6, wherein the light source is a laser.
Claim 12
Dependent Claim
39 words
The measuring instrument according to claim 6, wherein the measuring instrument further comprises an apparatus with which the light beam can be deflected, so that the light ray can be moved across the surface of the semiconductor crystal body.
Claim 13
Dependent Claim
28 words
The measuring instrument according to claim 6, wherein the holding mechanism is composed of a holding frame for receiving an adaptor that can accept different semiconductor crystal bodies.
Claim 14
Dependent Claim
49 words
The measuring instrument according to claim 6, wherein a plurality of measuring tips on the two measuring chamber halves are provided for producing an ohmic contact to the semiconductor crystal body, these measuring tips being connected at a number of locations to both sides of the semiconductor crystal body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |