Compact combiner for semiconductor devices operating in the ultra-high frequency range

Claim 1

A compact combiner for semiconductor diodes operating in the ultra-high frequency range, and having circular symmetry, comprising: a plurality of parallel connected semiconductor diodes each of which is affixed to a common surface of a metal base, each diode being adjacent at least one other diode, an impedance pre-matching cell associated with each diode, each pre-matching cell being formed by two chokes in series and two capacitors in parallel, each capacitor being connected between a choke and ground, the first capacitor of each impedance pre-matching cell being a discrete element fixed to the base, and the second capacitor, which is common to all the impedance pre-matching cells being formed by a dielectric material ring which is metallized on two opposite planar faces, and which is fixed to the base so that it is concentric to the combiner and encircles said diodes, chokes, and first capacitors, said chokes being parasitic chokes which are formed by metal tapes which are thermally compressed between the chip and the first capacitor for the first choke and between the first and second capacitors for the second choke, and said diodes being located in the center area of the base, and the chokes and first capacitors extending radially from said diodes in a symmetrical configuration wherein the chokes and first capacitors extending from each diode are equidistant from the chokes and first capacitors associated with adjacent diodes.